LOW QG MOSFET Search Results
LOW QG MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
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| NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
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| NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose |
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| TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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| TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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LOW QG MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency |
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IRF6785MTRPbF | |
irf6785mpbfContextual Info: DIGITAL AUDIO MOSFET PD - 97282 IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency |
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IRF6785MTRPbF irf6785mpbf | |
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Contextual Info: PD - 97282 DIGITAL AUDIO MOSFET IRF6785MTRPbF Key Parameters 200 Features VDS • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier RDS on typ. @ applications Qg typ. • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency |
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IRF6785MTRPbF | |
irfb4019
Abstract: PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF
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IRFB4019PbF O-220AB O-220AB irfb4019 PN channel MOSFET 10A highly efficient class d audio amplifier 200W highly efficiency Amplifier IRFB4019PBF | |
Irfb4019Contextual Info: PD - 97075 IRFB4019PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 RDS ON typ. @ 10V 80 V m: • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ. |
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IRFB4019PbF O-220AB O-220AB Irfb4019 | |
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Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss) |
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SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses |
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Si4392ADY 2002/95/EC Si4392ADY-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss) |
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SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
PN channel MOSFET 10A
Abstract: digital audio mosfet irfb4019
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IRFB4019PbF O-220AB IRF1010 O-220AB PN channel MOSFET 10A digital audio mosfet irfb4019 | |
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Contextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
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IRFPS40N60K, SiHFPS40N60K 2002/95/EC Super-247 11-Mar-11 | |
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Contextual Info: SiHW73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses |
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SiHW73N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
IRFS5620PBFContextual Info: PD - 96205 DIGITAL AUDIO MOSFET IRFS5620PbF IRFSL5620PbF Features • Key Parameters Optimized for Class-D Audio Key Parameters Amplifier Applications VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved |
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IRFS5620PbF IRFSL5620PbF O-262 EIA-418. IRFS5620PBF | |
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Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • Low input capacitance (Ciss) 0.039 • Reduced switching and conduction losses |
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SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
AN-994
Abstract: digital audio mosfet
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IRFS5620PbF IRFSL5620PbF O-262 EIA-418. AN-994 digital audio mosfet | |
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Contextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
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IRFPS40N60K, SiHFPS40N60K 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: PD - 96204 IRFS5615PbF IRFSL5615PbF DIGITAL AUDIO MOSFET Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS RDS ON typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved |
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IRFS5615PbF IRFSL5615PbF O-262 EIA-418. | |
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Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses |
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SiHG73N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
ClassD Amplifier 100v
Abstract: IRFS4020 IRFS40
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IRFS4020PbF IRFSL4020PbF O-262 EIA-418. ClassD Amplifier 100v IRFS4020 IRFS40 | |
AN-994
Abstract: digital audio mosfet 12v 300w audio amplifier circuit
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IRFS5615PbF IRFSL5615PbF O-262 EIA-418. AN-994 digital audio mosfet 12v 300w audio amplifier circuit | |
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Contextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
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IRFPS40N60K, SiHFPS40N60K 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFPS40N60KPBFContextual Info: IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.110 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
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IRFPS40N60K, SiHFPS40N60K 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPS40N60KPBF | |
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Contextual Info: SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses |
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SiHG33N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHB23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses |
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SiHB23N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses |
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SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |