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    LOW-POWER GERMANIUM PNP Search Results

    LOW-POWER GERMANIUM PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    LOW-POWER GERMANIUM PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp germanium to36

    Abstract: NTE330 Germanium power
    Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.


    Original     		PDF NTE330 NTE330 pnp germanium to36 Germanium power

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original     		PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    NTE158

    Abstract: germanium pnp transistor Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


    Original     		PDF NTE158 NTE158 300mA germanium pnp transistor Germanium power

    nte102

    Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
    Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:


    Original     		PDF NTE102 NTE103 200mV nte102 NTE103 vpt 20 germanium transistors NPN NTE10-3

    Untitled

    Abstract: No abstract text available
    Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.


    Original     		PDF 2N4277 -15Ade, -20Vde,

    germanium Power Transistor

    Abstract: Vcb-60V NTE27 Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power

    germanium Power Transistor

    Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
    Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power

    NTE158

    Abstract: germanium audio Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


    Original     		PDF NTE158 NTE158 300mA germanium audio Germanium power

    NTE158

    Abstract: Germanium power
    Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V


    Original     		PDF NTE158 NTE158 300mA Germanium power

    NTE179

    Abstract: No abstract text available
    Text: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating


    Original     		PDF NTE179 NTE179 100mA 500mA,

    AC122

    Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~


    Original     		PDF NKT223 2N1384 NKT304 2G320 AC116 2N565 2N566 AC122 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP

    bjt specifications

    Abstract: 2N652A power BJT PNP
    Text: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N652A 2N652A com/2n652a bjt specifications power BJT PNP

    2N1303

    Abstract: No abstract text available
    Text: 2N1303 Ge PNP Lo-Pwr BJT 3.90 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1303 Online Store 2N1303 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N1303 2N1303 com/2n1303

    Untitled

    Abstract: No abstract text available
    Text: <$£mi-t,onauctoi ^Products., IJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4048 PNP germanium power transistors designed for high-cur rent applications requiring high gain and extremely low saturation voltage.


    Original     		PDF 2N4048 dc-60Ade,

    2N601

    Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965


    Original     		PDF 2S8186 2Nl129 2S8486 MA1705 AC188K 2N3371 ACl15 2N601 TA761 asy26 2n6365 Low-Power Germanium PNP 2N3280 2N369 MXO55GA-4C-20.25M

    AF306

    Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284


    Original     		PDF 2N1524 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 AF306 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929

    germanium transistor pnp

    Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
    Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies


    Original     		PDF WiOO/25A 2N240 uG-491A/U, MIL-S-19500/25B 15SUE. 10UAL germanium transistor pnp GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c

    2N2431

    Abstract: Low-Power Germanium PNP 2N504 JI 32 AC184 2N544 ac151 2N3324 2n3325 ac125 germanium
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 AC153 AC153K AC153K 2N2431 AC126 ACY23 ACY23V ACY32 AC125 AC191 ~g~~~ 15 20 AC138 AC138 AC182 AC182 AC182 AC151 AC151 AC151 ~g~~~ 25 30 AC162 AC184 AC184 AC117 AC117 AC180 AC180 AC132 ~~~~~~ 35 40 2S8345


    Original     		PDF AC153 AC153K 2N2431 AC126 ACY23 ACY23V ACY32 AC125 AC191 Low-Power Germanium PNP 2N504 JI 32 AC184 2N544 ac151 2N3324 2n3325 ac125 germanium

    diode GG 64

    Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO


    Original     		PDF 2Gl024 2N2512 2G383 2Gl025 2Gl025 diode GG 64 diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24

    MR830

    Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
    Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —


    OCR Scan     		PDF MP600 MP603 MP600 MP601 MP602 MP603 MR830 germanium power transistors Germanium power

    MP1613

    Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
    Text: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt­


    OCR Scan     		PDF MP1613 J001I MP1613 MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power

    2N404 transistor

    Abstract: 2N404 VCE0-20V Germanium power
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage


    OCR Scan     		PDF 7X10-4 2N404 transistor 2N404 VCE0-20V Germanium power

    2N1195

    Abstract: Germanium power
    Text: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:


    OCR Scan     		PDF 2N1195 MIL-S-19500/71D, 2N1195 Germanium power

    2N1224

    Abstract: 2N1225
    Text: MIL=S=195QQ/189B AMENDMENT 1 24 February 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 This amendment forms a part of Military Specifipation MIL-S-19500/189B, dated 18 January 1972, and is a^fioyed for use


    OCR Scan     		PDF MIL-S-19500/189B 2N1224 2N1225 MIL-S-19500/189B, MIL-STD-202" 2N1225