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    EVKVC66901LPECL Renesas Electronics Corporation Evaluation Board for 5P49V6901 VersaClock® 6 Visit Renesas Electronics Corporation
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    DLP Design DLP-ECON-BP

    BOOSTER PACK 1.73" E-INK DISPLAY
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    Belden Inc BLPEC642-002

    ENDCAPS FOR 1-1/2"X3/8" RNW(2)
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    Mouser Electronics BLPEC642-002
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    Renesas Electronics Corporation EVKVC55901LPECL

    EVAL VERSACLOCK 5 PROGRAM CLK
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    Avnet Silica EVKVC55901LPECL 13 Weeks 2
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    International Components Corporation ICCMSLPECK

    ICC ICCMSLPECK Runway End Cap
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    Neutron USA ICCMSLPECK
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    LPEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDS1616AGTA

    Abstract: EDS1616AGTA-6B-E EDS1616AGTA-75-E
    Text: DATA SHEET 16M bits SDRAM EDS1616AGTA 1M words x 16 bits Description Pin Configurations The EDS1616AGTA is 16M bits SDRAM organized as 524,288 words × 16 bits × 2 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 50-pin plastic TSOP (II).


    Original     		PDF EDS1616AGTA EDS1616AGTA 50-pin 166MHz/133MHz M01E0107 E0504E30 EDS1616AGTA-6B-E EDS1616AGTA-75-E

    HM5264165-B60

    Abstract: HM5264805-B60 sdram 4 bank 4096 16 HM5264165 HM5264165TT-B60 Hitachi DSA00196
    Text: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832C Z Rev. 1.0 Jun. 25, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		PDF HM5264165-B60 HM5264805-B60 HM5264405-B60 16-bit PC/100 ADE-203-832C HM5264165 64-Mbit 1048576-word HM5264165-B60 HM5264805-B60 sdram 4 bank 4096 16 HM5264165TT-B60 Hitachi DSA00196

    143-PIN

    Abstract: No abstract text available
    Text: DATA SHEET 256MB SDRAM Micro DIMM EBS25UC8APMA 32M words x 64 bits, 1 bank Description Features The EBS25UC8APMA is 32M words × 64 bits, 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module (Micro DIMM), mounted 8 pieces of 256M bits SDRAM sealed in µBGA package. This module


    Original     		PDF 256MB EBS25UC8APMA EBS25UC8APMA 144-pin 18inch 100MHz/13ribed M01E0107 E0241E30 143-PIN

    HM5264805LTT-B60

    Abstract: HM5264805LTTB60 HM5264805TT-B60 Hitachi DSA00164
    Text: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832D Z Rev. 2.0 Oct. 20, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		PDF HM5264165-B60 HM5264805-B60 HM5264405-B60 16-bit PC/100 ADE-203-832D HM5264165 64-Mbit 1048576-word HM5264805LTT-B60 HM5264805LTTB60 HM5264805TT-B60 Hitachi DSA00164

    EDS2504ACTA

    Abstract: EDS2504APTA EDS2508ACTA EDS2508APTA EDS2516ACTA EDS2516APTA
    Text: DATA SHEET 256M bits SDRAM EDS2504ACTA, EDS2504APTA 64M words x 4 bits EDS2508ACTA, EDS2508APTA (32M words × 8 bits) EDS2516ACTA, EDS2516APTA (16M words × 16 bits) Description Pin Configurations The EDS2504AC/AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508


    Original     		PDF EDS2504ACTA, EDS2504APTA EDS2508ACTA, EDS2508APTA EDS2516ACTA, EDS2516APTA EDS2504AC/AP EDS2508 EDS2516 54-pin EDS2504ACTA EDS2504APTA EDS2508ACTA EDS2508APTA EDS2516ACTA EDS2516APTA

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword x 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-1095 Z Preliminary Rev. 0.0 Sep. 1, 1999


    Original     		PDF HM5251165B-75/A6/B6 HM5251805B-75/A6/B6 HM5251405B-75/A6/B6 Hz/100 16-bit 4-bank/16-Mword /32-Mword PC/133, PC/100 ADE-203-1095 Hitachi DSA00164

    Hitachi DSA00171

    Abstract: No abstract text available
    Text: HM5212165 シリ−ズ HM5212805 シリ−ズ 128M LVTTL interface SDRAM 66 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank ADJ-203-289A Z ’98. 7.1 Rev. 1.0 概要 HM5212165 シリーズは，2097152 ワード × 16 ビット × 4 バンク構成の SDRAM です。HM5212805 シリー


    Original     		PDF HM5212165 HM5212805 16-bit ADJ-203-289A HM5212805 HM5212805) HM5212165) /64ms Hitachi DSA00171

    Hitachi DSA00167

    Abstract: No abstract text available
    Text: HB52D88GB-F 64 MB Unbuffered SDRAM Micro DIMM 8-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 8 M × 16 components PC100 SDRAM ADJ-203-519 (Z) ’00 . 1. 13 暫定仕様 Rev. 0.0 概要 HB52D88GB は， 128M ビット SDRAM HM5212165FTD （TSOP パッケージ）


    Original     		PDF HB52D88GB-F 64-bit, PC100 ADJ-203-519 HB52D88GB HM5212165FTD 100MHz HB52D88GB-A6F/A6FL) HB52D88GB-B6F/B6FL) Hitachi DSA00167

    5264805

    Abstract: HM5264805 Series Hitachi DSA00164
    Text: HM5264165 Series HM5264805 Series HM5264405 Series 64M LVTTL interface SDRAM 125 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank/ 4-Mword × 4-bit × 4-bank ADE-203-497C Z Rev. 1.0 July 1, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		PDF HM5264165 HM5264805 HM5264405 Hz/100 16-bit ADE-203-497C 64-Mbit 1048576-word 5264805 HM5264805 Series Hitachi DSA00164

    EDS2532AABJ-6B

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM EDS2532AABJ-6B 8M words x 32 bits Description Pin Configurations The EDS2532AABJ is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.


    Original     		PDF EDS2532AABJ-6B EDS2532AABJ 90-ball 166MHz M01E0107 E0509E30 EDS2532AABJ-6B

    EDS1216AATA-75E

    Abstract: EDS1216AATA EDS1216AATA-75-E
    Text: DATA SHEET 128M bits SDRAM EDS1216AATA 8M words x 16 bits Description Pin Configurations The EDS1216AATA is a 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.


    Original     		PDF EDS1216AATA EDS1216AATA 54-pin 133MHz M01E0107 E0411E40 EDS1216AATA-75E EDS1216AATA-75-E

    Untitled

    Abstract: No abstract text available
    Text: HB52RD168GB-F L EO 128 MB Unbuffered SDRAM Micro DIMM 16-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components PC100 SDRAM E0009H10 (1st edition) (Previous ADE-203-1153A (Z) Jan. 19, 2001 Description Pr The HB52RD168GB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module


    Original     		PDF HB52RD168GB-F 16-Mword 64-bit, PC100 E0009H10 ADE-203-1153A HB52RD168GB 64-Mbit HM5264405FTB) 144-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 256MB Unbuffered SDRAM DIMM EBS25UC8APFA 32M words x 64 bits, 1 bank Description Features The EBS25UC8APFA is 32M words × 64 bits, 1 bank Synchronous Dynamic RAM Unbuffered Module, mounted 8 pieces of 256M bits SDRAM sealed in TSOP package. This module provides high density


    Original     		PDF 256MB EBS25UC8APFA EBS25UC8APFA 168-pin 38inch 133MHz M01E0107 E0210E31

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Features Description EO L The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual


    Original     		PDF 256MB HB52RF328GB-B HB52RD328GB-B HB52RF328GB HB52RD328GB HM522805BTB/BLTB) 144-pin M01E0107 E0202H10

    EBS25EC8APFA

    Abstract: EBS25EC8APFA-75 EBS25EC8APFA-7A EDS2508APTA
    Text: DATA SHEET 256MB Unbuffered SDRAM DIMM EBS25EC8APFA 32M words x 72 bits, 1 bank Description Features The EBS25EC8APFA is 32M words × 72 bits, 1 bank Synchronous Dynamic RAM Unbuffered Module, mounted 9 pieces of 256M bits SDRAM sealed in TSOP package. This module provides high density


    Original     		PDF 256MB EBS25EC8APFA EBS25EC8APFA 168-pin 38inch 133MHz M01E0107 E0209E20 EBS25EC8APFA-75 EBS25EC8APFA-7A EDS2508APTA

    EDS6416AHBH

    Abstract: EDS6416AHBH-6B-E EDS6416CHBH
    Text: DATA SHEET 64M bits SDRAM EDS6416AHBH, EDS6416CHBH 4M words x 16 bits Description Pin Configurations The EDS6416AHBH, EDS6416CHBH are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.


    Original     		PDF EDS6416AHBH, EDS6416CHBH EDS6416CHBH EDS6416AHBH) EDS6416CHBH) 60-ball 166MHz/133MHz M01E0107 EDS6416AHBH EDS6416AHBH-6B-E

    EDS2532JEBH-75

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532JEBH-75 8M words x 32 bits Description Pin Configurations The EDS2532JEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the


    Original     		PDF EDS2532JEBH-75 EDS2532JEBH 90-ball 133MHz M01E0107 E0618E50 EDS2532JEBH-75

    EDS2532EEBH-9A

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2532EEBH-9A 8M words x 32 bits Description Pin Configurations The EDS2532EEBH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the


    Original     		PDF EDS2532EEBH-9A EDS2532EEBH 90-ball 111MHz M01E0107 E0617E40 EDS2532EEBH-9A

    EDS6416AHTA

    Abstract: EDS6416AHTA-75TI-E EDS6416AHTA-TI
    Text: PRELIMINARY DATA SHEET 64M bits SDRAM WTR Wide Temperature Range EDS6416AHTA-TI (4M words x 16 bits) Description Pin Configurations The EDS6416AHTA is a 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the


    Original     		PDF EDS6416AHTA-TI EDS6416AHTA 54-pin 133MHz M01E0107 E0636E10 EDS6416AHTA-75TI-E EDS6416AHTA-TI

    EDS2516ADTA-75

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits SDRAM EDS2516ADTA-75 16M words x 16 bits Description Pin Configurations The EDS2516ADTA is 256M bits SDRAMs organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the


    Original     		PDF EDS2516ADTA-75 EDS2516ADTA 54-pin 133MHz M01E0107 E0611E20 EDS2516ADTA-75

    EDS2732CABH

    Abstract: No abstract text available
    Text: DATA SHEET 256M bits SDRAM EDS2732CABH 8M words x 32 bits Description Pin Configurations The EDS2732CA is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.


    Original     		PDF EDS2732CABH EDS2732CA 90-ball 133MHz/100MHz M01E0107 E0397E40 EDS2732CABH

    lpec

    Abstract: No abstract text available
    Text: RECTIFIERS SES5801 SES5802 SES5803 High Efficiency, 60A FEATURES • Low Forward Voltage • Fast Switching Speeds • High Surge Capability • Low Thermal Resistance • Mechanically Rugged DO-5 Package • Reverse Polarity Available DESCRIPTION The SES, super-fast recovery, rectifiers are


    OCR Scan     		PDF SES5801 SES5802 SES5803 SES5801 SES5802 lpec

    ultrasparc

    Abstract: No abstract text available
    Text: UltraSPARC “-!! Data Buffer UDB-II DATA SHEET Companion Device for 250/300 MHz UltraSPARC-II Systems D e s c r ip t io n The UltraSPARC-II Data Buffer (UDB-II) consists of two identical ASICs connecting the UltraSPARC-II micro­ processor and its E-Cache to the system data bus (i.e., UPA bus). These two are designated UDB_H (for the


    OCR Scan     		PDF 1V11V UltraSPARC-11 STP1081ABGA-125 STP1081ABGA-150 ultrasparc

    Untitled

    Abstract: No abstract text available
    Text: PC/100 SDRAM HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,


    OCR Scan     		PDF PC/100 HM5216805-A60, HM5216405-A60 576-word 152-word ADE-203-796 HM5216405