LTS 6 NP Search Results

Contextual Info: LED DISPLAY LTS-10804KF LED DISPLAY LTS-10804KF Rev Description By Date 01 Preliminary SPEC MINALIN 09-Sep-2009 Above data for PD and Customer tracking only - NPPR Received and Upload on system MINALIN 09-Sep-2009 ANON/ James 26-Feb-2014 Add cosmetics spec as note on page 3 of 6

BC238B npn

Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
Contextual Info: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN

LTS 6-NP

Abstract: hall current transducer lts 6-np lem lts lts 6 np mini servo motor
Contextual Info: Current Transducer LTS 6-NP IPN = 6 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16065 Electrical data IPN IPM ÎPDC

100915

Abstract: LTS 6-NP
Contextual Info: Current Transducer LTS 6-NP For the electronic measurement of currents: DC, AC, pulsed, mixed with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 6 At 16065 Electrical data IPN IPM ÎP VOUT

hall current transducer lts 6-np

Abstract: LTS 6-NP operation principle of lts 6-NP lem lts lts 6 np LEM Components
Contextual Info: Current Transducer LTS 6-NP IPN = 6 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16065 Electrical data IPN IPM ÎP

Contextual Info: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024

Contextual Info: Current Transducer LTS 6-NP For the electronic measurement of currents: DC, AC, pulsed, mixed with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 6 At 16065 Electrical data IPN IPM ÎP VOUT

hall current transducer lts 6-np

Abstract: LTS 6-NP
Contextual Info: Current Transducer LTS 6-NP IPN For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). = 2-3-6 A Electrical data IPN IP VOUT NS

operation principle of lts 6-NP

Abstract: LTS 6-NP
Contextual Info: Current Transducer LTS 6-NP IPN = 2-3-6 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT NS

LTS 6-NP

Abstract: lem lts operation principle of lts 6-NP lts 6 np hall current transducer lts 6-np lem 703 lts 25 np
Contextual Info: Current Transducer LTS 6-NP IPN = 6 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data I PN IP Î PDC VOUT

operation principle of lts 6-NP

Abstract: hall current transducer lts 6-np LTS 6-NP LEM Components
Contextual Info: Current Transducer LTS 6-NP IPN = 2-3-6 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT NS

lem lts

Abstract: operation principle of lts 6-NP LTS 6-NP
Contextual Info: Current Transducer LTS 6-NP IPN = 2-3-6 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP Primary nominal r.m.s. current

2n3716

Contextual Info: 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 V. 1 of 1 Home Part Number: 2N3716 Online Store 2N3716 Diodes 1 0 AM PERE PO WER TRANSISTO RS SILIC O N NPN 6 0 .8 0 VO LTS Transistors 1 5 0 WATTS

LTS6-NP

Abstract: hall current transducer lts 6-np lts 6 np
Contextual Info: 2002-06-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 76-963-05 Strömsensor LTS6-NP Current Transducer LTS 6-NP IPN For the electronic measurement of currents : DC, AC, pulsed, mixed,

BUY69

Abstract: bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026
Contextual Info: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 - 2 3 - “ 6-6-4- — 38 05 min - D im ensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A IC d.c. A PTO T 200 6 250 300 400 6 4 4 4 4 50 50 50 50 10 100

6LJ6

Abstract: VICTOREEN hv resistor VICTOREEN hr flyback tv transformer 6lj6a general electric
Contextual Info: — PRODUCT INFORMATION — Page 1 t.U'X 7 « O ViC I 6LJ6-A Beam Triode IS .V'HO\- TUBES FOR HV SHUNT REGULATOR APPLICATIONS • CO LO R TV TYPE ■ 27000 VO LTS D C T h e 6 L J 6 - A is a low-current, ■ 40 WATTS PLATE DISSIPATION high-voltage, b e a m t riode

SFD5390

Contextual Info: SFD5390 5 AMP NPN D A R L I N G T O N T R A N S I S T O R 1 2 0 VO LTS CASE STYLE 14830 V alley View Avenue La Mirada. California 9 0 6 3 8 213 9 2 1 -9 6 6 0 T W X 9 1 0 -5 8 3 -4 8 0 7 FAX 2 1 3 -9 2 1 -2 3 9 6 FEATURES t •*« i * U JtM C TOO IftU KKttON S

MJ3026

Abstract: TIC 136 Transistor MJ3027
Contextual Info: M J 3 0 2 6 s ilic o n M J302 7 2 AMPERES POWER TRANSISTORS NPN SILICON VERTICAL OUTPUT HIGH-VOLTAGE NPN SILICON TRANSISTORS 500, 700 V O LTS . . . designed for use in class A vertical deflection in television receivers, where linear h p g is desired to 2 5 0 m A . Intended fo r use w ith high

BU157

Abstract: CV7334 s3 npn 2S721 BU500 2S025 2S723 2S026 CV7333 BD253
Contextual Info: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 -2 3 - “ 6-6-4- — 38 05 min - Dimensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A VC EX VCER VCEO V V V IC d.c. A PTO T 300 350 400 500 500 400 250

BU222

Abstract: MJ425 2N3738 BU208 BU222A MJ3029 2N3583 2N3584 2N3739 2N6211
Contextual Info: Silicon Power-Metal-Can NPN l C = 1.0 A. 2N 3583 2N 3738 2N 3739 l e = 2.0 A. 2N 3584 M J3026 MJ3027 2N 3585 2N 4240 v CEO V olts hp£ @ M in./M ax. •c Am p. v CE sat @ 'C V o lts Max. Am p. fT M Hz PD Watts Case PNP 2N 6420 2N 6 4 2 4 2N 6425 175 225 300

6by5G

Abstract: 6by5 FULL WAVE RECTIFIER CIRCUITS
Contextual Info: TENTATIVE 6BY5G DATA TUNG-SOL DOUBLE DIODE COATED UN I P O TEN TIA L CATHODE HEATER 6 . 3 VO LTS 1 .6 AMP. AC OR DC ANY MOUNTING P O S IT IO N BOTTOM VIEW MED IUM S H E L L 7 P I N OCTAL 6CN THE 6BY5G I S A FULL-W AVE HIGH-VACUUM R E C T IF IE R D ESIG N ED FOR DAMPER S ER ­

b0239c

Abstract: 7 amps pnp transistor TRANSISTOR T0220 PNP POWER TRANSISTOR TO220 B0243C BD243 B0243 b0244c npn transistor bd243c Transistor 2n6099
Contextual Info: PLASTIC POWER P L A S T IC P O W E R T R A N S IS T O R S E L E C T O R C H A R T lc 4 Am ps VCE° V o lts NPN PNP 5 Am ps NPN 7 Am ps PNP NPN PNP 7 Am ps NPN PNP > 10 A m ps NPN 2 N 6 2 8 8 2N 6 1 1 1 30 2N6103 40 BD239 BD240 B D 2 41 BD242 BD243 BD244 BD243A

a331j

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to

8U806

Abstract: 1 L 0380 R 14J7 2j0115
Contextual Info: MOTO RO LA SC XSTRS/R 12 E D I b3b?asM GoaMaas a | T-zyi* F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 .0 AM PERE DARLINGTON NPN POWER TRANSISTORS N PN D A R L IN G T O N P O W E R T R A N S IS T O R S 6 0 W ATTS 160 and 2 00 V O LTS These Darlington transistors are high voltage, high speed devices