LV2931E50S Search Results

Contextual Info: AMER P H IL IP S /D IS C R E T E OLE D ^53=131 001SD0S a DhVtLUPM fcNI U A IA LV2931E50S This data sheet contains advance information and specifications are subject to change without notice. y v r 3 3 - 0 ? - MICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended for use in common-emitter class-A

ta309

Abstract: MSA094 LV2931E50S Broadband emitter nm LED
Contextual Info: " 1 ^ 3 3 - O R LV2931E50S \ ShE T> PHILIPS INT ERNATIONAL • ?110fiSb DD4b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR N PN silicon planar microwave power transistor intended for use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GH z frequency range.

FO-83B

Abstract: LV2931E50S
Contextual Info: N AMER PHIL IP S/D ISC RE TE DhVbLUHM tNI 0L.E D J ^53^31 UAIA T h is d a t a s h e e t c o n t a in s a d v a n c e i n f o r m a ti o n a n d s p e c if ic a tio n s a r e s u b j e c t t o c h a n g e w i t h o u t n o t i c e . G01S00S fl LV2931E50S r - 3 3 - 0 e}

Contextual Info: - P 3 3 - o q LV2931E50S \ ShE T> • PHILIPS INTERNATIONAL 71106Sb Q04b274 7*17 « P H I N M ICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended fo r use in common-emitter class-A broadband linear power amplifiers, in the 2.9 to 3.1 GHz frequency range.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

LTE-3201

Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
Contextual Info: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S