M 272 Search Results

M27256ZB

Abstract: 27256Z
Contextual Info: O K I semiconductor MSM27256ZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27256Z B is a 32,768-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27256Z B is m anufactured by the N channel double silicon gate M OS technology and is

Contextual Info: O K I semiconductor MSM27256ZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The M S M 27256ZB is a 32,768-w ord x 8-bit electrically program m able read-only m em ory. The M S M 27256Z B is m anufactured by the N channel double silicon gate M O S technology and is

msm27256

Contextual Info: O K I semiconductor MSM27256 32,768-Word x 8-Bit UV EPROM GENERAL DESCRIPTION The M M 27256 is a 32,768-w ord x 8-bit ultraviolet erasable and electrically program m able read­ only m em ory. The M M 27256 is m anufactured by the N channel double silicon gate M OS

41LM1

Contextual Info: H jmmftf'Pnuiticin m^Pmäueiss_^ gm 140CommerceDrive iüe, PA18936-1013 ~ M IC r m e m i M ontgomeryvM lei: 215 631-9840 SD1 272-2 Pfoffj» » fty JWwi'ilflS'y RF & MICROWAVE TRANSISTORS 130,. 230MHz FM MOBILE APPLICATIONS PM CLASS 0 TRANSISTOR FREQ UEN CY

Contextual Info: IN D µ UCT H A @ NC ±5 E % Q MI NI MU M TE ST FR EQ UE NC SR Y (M F MI Hz NI ) MU M DC (M Hz MA RES ) XI IST MU A M NC CU RR (OH E MA E MS XI NT ) MU R A M TI (m NG A) DA SH Radial Toroidal Inductors NU MB ER * 2727R 2727 Series SERIES 2727 IRON CORE Physical Parameters

Contextual Info: IN D µ UCT H A @ NC ±5 E % Q MI NI MU M TE ST FR EQ UE NC SR Y (M F MI Hz NI ) MU M DC (M Hz MA RES ) XI IST MU A M NC CU RR (OH E MA E MS XI NT ) MU R A M TI (m NG A) PA RT Radial Toroidal Inductors NU MB ER Series 2727 RF INDUCTORS SERIES 2727 IRON CORE

Contextual Info: IN D µ UCT H A @ NC ±5 E % Q MI NI MU M TE ST FR EQ UE NC SR Y (M F MI Hz NI ) MU M DC (M Hz MA RES ) XI IST MU A M NC CU RR (OH E MA E MS XI NT ) MU R A M TI (m NG A) PA RT Radial Toroidal Inductors NU MB ER Series 2727 SERIES 2727 IRON CORE Physical Parameters

MS21424

Abstract: 2727-01J
Contextual Info: IN D µ UCT H A @ NC ±5 E % Q MI NI MU M TE ST FR EQ UE NC SR Y (M F MI Hz NI ) MU M DC (M Hz MA RES ) XI IST MU A M NC CU RR (OH E MA E MS XI NT ) MU R A M TI (m NG A) PA RT Radial Toroidal Inductors NU MB ER Series 2727 RF INDUCTORS SERIES 2727 IRON CORE

MS21424

Contextual Info: IN D µ UCT H A @ NC ±5 E % Q MI NI MU M TE ST FR EQ UE NC SR Y (M F MI Hz NI ) MU M DC (M Hz MA RES ) XI IST MU A M NC CU RR (OH E MA E MS XI NT ) MU R A M TI (m NG A) DA SH Radial Toroidal Inductors NU MB ER * 2727R 2727 Series SERIES 2727 IRON CORE Physical Parameters

tc 97101

Abstract: 5 PEN PC TECHNOLOGY advance oQ26
Contextual Info: ADVANCE M lf~ a n M 1 2, 4 M EG BURST EDO DRAM MODULE M T9LD 272A B, M T18LD 472A B 72 B U RST EDO DRAM M O D ULES X 2, 4 MEG x 72 16, 32 MEGABYTE. NONBUFFERED, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View 168-Pin DIMM

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

740L6011

Abstract: P2822
Contextual Info: — 272 — T T L - L E D - P h o t o T TL D io d e - T T L O p e n TTL C o lle c t o r m D r iv e r 15V i 1 w S m m — 1 V % = \ LU LU LU ft ± 5e fö m 1 Sä 740L6011 # tt Gl « Il fr- ¡sfc 1! 2 Vcc/ m ax (V ) Vcco m ax (V ) BV m ax (k V ) C M ) ( A )

74245

Abstract: 74645 74623 OALS623
Contextual Info: - 272Octal 3-S tate Bus Transceivers 74623 E N A B lf V0 C 5 8 A * ’ WMBLE A1 A2 R A3 U M A4 M AS M A6 O Channel Z? b Enable O A L S 6 2 3 -1 ¡ i IoL m ax 48mA O A L S 1 6 2 3 -1 J i IoL(m ax) 24mA 87 A7 A8 M GNO m Hys tpd tpd tpd tpd Icc I ]H max max

Contextual Info: Z -C O M M U N IC A T IO N S IN C MSE D • T îb b M b b 0 0 Q G 22G m iC I 1 VCO m o d e l l -210 Z ~ C o m m u n ic a t io n s , I n c . * 9939 Via Pasar • San Diego, California 92126 Phone 619 621-2700 FAX (619) 621-2722 ^ | ”5 PAR F 1 O " \ ^ PHASE NOISE (1Hz BW) (TYP)

television internal parts block diagram TA 8719

Abstract: 78054GC nec 78056gc mpd78054 78058GC 2SC 3205 uPD78052 uPD78052Y uPD78053 uPD78053Y
Contextual Info: mPD78054, 78054Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER m PD78052 m PD78053 m PD78054 m PD78P054 m PD78055 m PD78056 m PD78058 m PD78P058 1992 m PD78052Y m PD78053Y m PD78054Y m PD78P054Y m PD78055Y m PD78056Y m PD78058Y m PD78P058Y Document No. U11747EJ4V0UM00 4th edition

CPGA132

Contextual Info: ASICs A SIC P a c k a g i n g O p t i o n s M S M 1 0 S , M S M 3 8 S , M S M 9 1 S and M SM 98S Q FP PLCC TQ FP CPGA 44 60 64 80 100 128 136 144 160 176 208 240 272 304 44 64 80 100 144 44 68 B4 72 8B 132 176 208 401 0.8 10 0.8 0.8 0.65 0.8 0.65 0 65 0.65

mPD75306

Abstract: mPD75308 75P316 PD75304 PD75306 PD75306GF PD75308 75308B uPD75312B PD75316
Contextual Info: m PD75308 4-BIT SINGLE-CHIP MICROCONTROLLER m PD75312B m PD75316 m PD75316B m PD75P308 m PD75P316 m PD75P316A m PD75P316B 1989 1994 m PD75304 m PD75304B m PD75306 m PD75306B m PD75308 m PD75308B m PD75312 Document No. U11023EJCV0UM00 12th edition (Previous No. IEU-1263)

h995

Contextual Info: ADVANCE M IC R O N 1 M T9LD 272 B N , M T18LD 472 B(N) 2, 4 MEG X 72 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line m em ory m odule (DIMM)

IC-2472

Abstract: IC-2523 75308 nec 75P308 uPD75304B PD75306 75p316b uPD75312B PD75316 uPD75P308
Contextual Info: m PD75308 4-BIT SINGLE-CHIP MICROCONTROLLER m PD75312B m PD75316 m PD75316B m PD75P308 m PD75P316 m PD75P316A m PD75P316B 1989 1994 m PD75304 m PD75304B m PD75306 m PD75306B m PD75308 m PD75308B m PD75312 Document No. U11023EJCV0UM00 12th edition (Previous No. IEU-1263)

PD75306

Abstract: IC-2477 75308gf uPD75P316 uPD75P316A uPD75P316B uPD75304 uPD75304B uPD75308 uPD75312B
Contextual Info: m PD75308 4-BIT SINGLE-CHIP MICROCONTROLLER m PD75312B m PD75316 m PD75316B m PD75P308 m PD75P316 m PD75P316A m PD75P316B 1989 1994 m PD75304 m PD75304B m PD75306 m PD75306B m PD75308 m PD75308B m PD75312 Document No. U11023EJCV0UM00 12th edition (Previous No. IEU-1263)

Contextual Info: 12 Insulated Terminal Blocks, Series 272 Compact Terminal Blocks Please see also term inal blocks series 2 9 3 pages 6.8 - 6.9 2 x 0 . 5 - 1 . 5 m m 2"s" 2 x A W G 2 0 - 1 6 "sol." 1 x 0 . 5 - 0 . 7 5 m m 2 "s" 1 x A W G 2 0 - 1 8 "sol." O 2 x 0 . 5 - 1 . 5 m m 2"s"

78F0034

Abstract: Nec 78F0034 78F0034Y 780024Y 780034Y PD780021 PD780022 PD780023 MPD730 uPD780031
Contextual Info: m PD780024, 780034, 780024Y, 780034Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY m PD780021 m PD780022 m PD780023 m PD780024 m PD780021(A) m PD780022(A) m PD780023(A) m PD780024(A) 1996 m PD780031 m PD780032 m PD780033 m PD780034 m PD780031(A)

Contextual Info: HA-2720/25 ¡3 H a r r i s Not Recom m ended For New Designs See HA-5141 or HA-5151 \D escription Features W ID E P R O G R A M M IN G Wide Range Programmable Operational Amplifier H A - 2 7 2 0 / 2 7 2 5 p r o g r a m m a b l e a m p l i f i e r s are i n t e r n a l l y c o m p e n ­

10YD

Abstract: L4613 ml041 ML46481 ML668 ML4557 MLA2170-102 L4910 MLM6518-301D L0522
Contextual Info: * LL • • • : • • : ■ >tr bt r . , ’ ’ ll £5 Li ‘ f i n . C/D CO C/5 CO CO c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o c o > 5 ^ s ? > > > > > > > > > 5 CvI C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M C N C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M C M