M 948 LC Search Results

M948

Abstract: Teltone M-949 948100 M-948 ir 948 d teltone m949 TELTONE m-948
Contextual Info: \ \ M-948 DTMF RECEIVER Features Description • • • • • • • • • The Teltone M-948 combines switched-capacitor and digi­ tal techniques to decode Dual-tone Multifrequency DTMF and rotary dial signals to four-bit binary data. No prefiltering

S46 SMD

Contextual Info: Philips Components BDS 944/946/948 Datasheet status P ro d u ct sp ecification date of issue April 1991 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended fo r general

HB54A169FN-8D

Abstract: HB54A89FM-10D HB54A89FM-8D HB54A169FN-10D Hitachi DSA00196 Nippon capacitors
Contextual Info: HB54A89FM Series HB54A169FN Series HB54A89FM 64 MB Unbuffered DDR SDRAM DIMM 8-Mword x 72-bit, 1-Bank Module 9 pcs of 8 M × 8 Components HB54A169FN 128 MB Unbuffered DDR SDRAM DIMM 16-Mword × 72-bit, 2-Bank Module (18 pcs of 8 M × 8 Components) ADE-203-948 (Z)

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB54A89FM Series HB54A169FN Series HB54A89FM 64 MB Unbuffered DDR SDRAM DIMM 8-Mword x 72-bit, 1-Bank Module 9 pcs of 8 M × 8 Components HB54A169FN 128 MB Unbuffered DDR SDRAM DIMM 16-Mword × 72-bit, 2-Bank Module (18 pcs of 8 M × 8 Components) ADE-203-948 (Z)

dtl 946 ic

Abstract: S1063 945DM 9099 ks2 6k 930DM dtl 948 946 dtl 945 6k DM936
Contextual Info: D M 9 3 0 Series Additional Devices DTL Circuits General Description The D M 90 9 3 and D M 90 9 4 are dual JK flip -flo p s o f the D M 945 and D M 948 variety respectively. B o th flip -flo p s have separate clocks and no asynchronous clear lines. The N ational S e m iconductor fa m ily o f D T L is a com plete

TOP 948 TIMER LCD MULTI-FUNCTION

Abstract: TOP 948 wiring diagram contractor top948 INI LCD 11-PIN wiring diagram for 11-pin relay 3.5 digit LCD display Timer wiring diagram lcd 204
Contextual Info: TIMERS TIMERS 812, 814, 815, 816 Series .22" 5.5 (70.4) 2.77" +0.6 (45 0 ) 1.77" 1.89" (48) +.02 -0 Panel cut-out (48) 1.89" .57" +0.6 (45 0 ) +.02 1.77" - 0 88857 Series Cut-out 69.2 14.5 5.5 48 48 +0.6 45 0 TOP 948 CHECK RST ENT PR +0.6 45 0 M/F/G Models

TOP 948 TIMER LCD MULTI-FUNCTION

Abstract: crouzet 948 crouzet TIMER crouzet TOP 948 wiring diagram contractor Crouzet TIMER 816 TOP 948 datasheet for Crouzet TIMER 814 crouzet TIMER series 816 crouzet repeat cycle timer
Contextual Info: TIMERS TIMERS 812, 814, 815, 816 Series .22" 5.5 (70.4) 2.77" +0.6 (45 0 ) 1.77" 1.89" (48) +.02 -0 Panel cut-out (48) 1.89" .57" +0.6 (45 0 ) +.02 1.77" - 0 88857 Series Cut-out 69.2 14.5 5.5 48 48 +0.6 45 0 TOP 948 CHECK RST ENT PR +0.6 45 0 M/F/G Models

transistor f 948

Abstract: TRANSISTOR bdp 948 sot 223 marking code 4c TRansistor A 950 siemens sot223 C4217
Contextual Info: SIEMENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low cotiector-emitter saturation voltage BDP 948 BDP 948 Q62702-D1336 1=B o CO BDP 950 BDP 950 Q62702-D1338 1= B 2=C CO

transistor f 948

Contextual Info: SIEM ENS BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 NPN 2 1 SOT-223 SOT-223 II O il li

TOP 948

Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
Contextual Info: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

TOP 948

Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Contextual Info: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors

BD944

Abstract: BD946 BD943 BD948 LE17
Contextual Info: S e m e la b p ic SEME Coventry Road. Lutterworth Leicestershire LE17 4JB. England Sales telephone: 0455 556565 AQAP-1 Licence No 2M8S02 ^ Licence No. M/103&#39;CECC/UK ESA Admin telephone: 0455 552505 Telex: 341927 SMLLUT G Fax: 0455 552612 Approval Pen<5ing

554 CA3

Abstract: LC-XD1217P LC-XD1217PG LC-XD1217 LC-XD1217APG 70.4 L marking M511 ati 361 G104101 Discharge
Contextual Info: Individual Data Sheets LC-XD1217PG/APG* For standby power supplies. Expected trickle design life: 10 – 12 years at 20 °C according to Eurobat. VdS G104101 Dimensions mm M5 M5 11.8 11.8 12.5 12.5 12.5 M511 M5 M5 M5 Terminal type (option): 11.8 11 11 LC-XD1217PG:

NF 948

Abstract: V/NF 948
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 4 -2 3 5 1 0 -1 E 1.0 GHz band Low Power l/Q Modulator For Direct Conversion MB54608L/MB54608B • DESCRIPTION The MB54608L/B is an l/Q Modulator for direct conversion method, and is used for up to 1.0 GHz band digital

potenciometro 1k

Abstract: potenciometro LINEAR potenciometro 1M potenciometro 100 K POTENCIOMETRO LINEAR 1K YZ101 trimmer pos. log
Contextual Info: NACESA £f PIH ER PT-15 P o t e n c i ó m e t r o d e a ju s t e Trimmer potentiometer CARACTÍE 1 E L E C T R IC A E ? P R E S T A C lC ; - POTENCIOMETRO DE CARBON. CARBON POTENTIOMETER. - ENCAPSULADO PROTEGIDO AL POLVO. D U S T PRO O F ENCLOSURE - SUBSTRATO DE POLIESTER.

BD946

Abstract: BD948 IN 3319 B
Contextual Info: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.

LDB25C

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23510-2E ASSP 1.0 GHz band Low Power I/Q Modulator For Direct Conversion MB54608L/MB54608B • DESCRIPTION The MB54608L/B is an I/Q Modulator for direct conversion method, and is used for up to 1.0 GHz band digital cellular phones such as GSM, PDC and so on.

SG100

Abstract: BCC-16 MB54608B MB54608L SSOP-20 flip-flop 948 psq20 LDB25C201A09
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23510-2E ASSP 1.0 GHz band Low Power I/Q Modulator For Direct Conversion MB54608L/MB54608B • DESCRIPTION The MB54608L/B is an I/Q Modulator for direct conversion method, and is used for up to 1.0 GHz band digital cellular phones such as GSM, PDC and so on.

BCC-16

Abstract: MB54608B MB54608L SSOP-20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23510-2E ASSP 1.0 GHz band Low Power I/Q Modulator For Direct Conversion MB54608L/MB54608B • DESCRIPTION The MB54608L/B is an I/Q Modulator for direct conversion method, and is used for up to 1.0 GHz band digital cellular phones such as GSM, PDC and so on.

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8126GR 900 MHz BAND DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION DESCRIPTION The ¿iPC8126GR is a silicon monilithic integrated circuit designed as 900 MHz band direct guadrature modulator

J31 transistor

Abstract: CR2480M transistor f 948 transistor mosfet 803 C953 20 amp MOSFET transistor PD233 GP 948 nee j8
Contextual Info: an A M P com pany MOSFET Power Transistor, 80W, 26V 925 - 960 MHz CR2480M V2.00 Features • • • • • • • N-Channel Enhancement Mode Device Cellular Base Station Applications 8 0 Watts CW Common Source Gem ni Configuration RESFET Structure Internal Input Impeda nee Matching

AN93C02NSB

Abstract: G013
Contextual Info: Panasonic Mobile Communication AN93C02NSB Pager IF 1C • Overview The AN93C02NSB is a pager IF 1C. It incorporates an RF bipolar process to minimize current consumption. ■ Features • Operates on low voltage Vcc= 1 .0 V to 1.8V • Low current consumption (lcc=typically 45 0 /¿A)

Contextual Info: Panasonic Mobile Communication AN93C02NSB P ager IF 1C • Overview The AN93C02NSB is a pager IF 1C. It incorporates an RF bipolar process to minimize current consumption. ■ Features • Operates on low voltage Vcc= 1 .0 V to 1.8V • Low current consumption ( lcc=typically 450 ¿/A)

PDC900

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8126GR 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION DESCRIPTION The µPC8126GR is a silicon monilithic integrated circuit designed as 900 MHz band direct guadrature modulator