M150G Search Results

MBM150GR12A

Abstract: Hitachi DSA0047
Contextual Info: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

MBM150GR12A

Abstract: mbm150gr12 igbt 1200v 150a
Contextual Info: PDJ-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M150GR12A [定格 150A/1200V, 2in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用

mbm150gr12

Abstract: MBM150GR12A MBM150
Contextual Info: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200

Contextual Info: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 V cG R R ge = 20 lc Tease = 2 5 / 6 5 °C 190 / 150 IcM Tease = 2 5 / 6 5 °C ; tp = 1 ms 380 / 300 ±20 V ges Ptot pe r IG B T , T oase = 2 5 °C 800 - 4 0 . + 1 5 0 1 2 5 )

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Abstract: *semibox M150G
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/65 °C Tcase = 25/65 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 190 / 150

Contextual Info: s e MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg Visol humidity climate Units Rge = 20 Toase = 25/70 °C Tease = 25/70 °C; tp = 1 ms per IGBT, T oase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68T.1

150GB

Abstract: GB063D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 200 / 150

GAY17

Abstract: C8050 10C1 c21027 M1s0 NPT-IGBT SKM GAY1
Contextual Info: back I ¡Hi 5EMIKR0N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units Ptot Tj, T s,g) per IGBT/Diode, T caSe = 25 °C Vsol AC, 1 min. DIN 40 040 DIN IEC 68 T.1 humidity climate 1700 1700 1 1 0 /7 5 2 2 0 /1 5 0 ±20

uc1025

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 200 / 150

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Abstract: semikron SKm 123D semikron SKm 50 GB 123D 123d transistor high frequency welder circuit diagram LB 124D skm 200 123d transistor SKM 75 GB 123D 124d transistor 123D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100 4)