transistor m33
Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package
|
Original
|
PDF
|
NE851M33
NE851M33-T3
transistor m33
NEC TRANSISTOR MARKING CODE
M33 TRANSISTOR
NE851M33
NE851M33-T3
date code marking NEC
|
M33 TRANSISTOR
Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package
|
Original
|
PDF
|
NE687M33
NE687M33-T3
M33 TRANSISTOR
NEC TRANSISTOR MARKING CODE
NE687M33
NE687M33-T3
|
NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A
Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
|
Original
|
PDF
|
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
|
M33 nec
Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG2046M33
NESG2046M33-T3
M33 nec
M33 TRANSISTOR
NESG2046M33
marking T7
|
NE687M33
Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)
|
Original
|
PDF
|
NE687M33
NE687M33-A
NE687M33-T3-A
NE687M33
NE687M33-A
NE687M33-T3-A
MARKING CODE m33
|
NE685M33-T3-A
Abstract: NE685M33 NE685M33-A
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
|
Original
|
PDF
|
NE685M33
NE685M33-A
NE685M33-T3-A
NE685M33-T3-A
NE685M33
NE685M33-A
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
|
Original
|
PDF
|
NESG2046M33
NESG2046M33
NESG2046M33-T3
NESG2046M33-A
NESG2046M33-T3-A
|
date code marking NEC
Abstract: NEC TRANSISTOR MARKING CODE code marking NEC M33 marking NEC MARKING CODE NE685M33-T3 NE685M33 M33 TRANSISTOR
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE685M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz 2 • S21e = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
|
Original
|
PDF
|
NE685M33
NE685M33-T3
date code marking NEC
NEC TRANSISTOR MARKING CODE
code marking NEC
M33 marking
NEC MARKING CODE
NE685M33-T3
NE685M33
M33 TRANSISTOR
|
Untitled
Abstract: No abstract text available
Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6
|
Original
|
PDF
|
MMBTH10LT1
236AB)
1000MHz
|
mmbth10
Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0
|
Original
|
PDF
|
MMBTH10LT1
236AB)
1000MHz
mmbth10
MMBTH10LT1
M33 thermal
marking M33
RB marking
|
DTB743XE
Abstract: DTB743XM SC-75A
Text: DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743XE / DTB743XM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB743XE 0.7 1.6 0.55 0.3 zFeature 1) VCE(sat) is lower than the conventional products.
|
Original
|
PDF
|
DTB743XE
DTB743XM
-200mA
DTB743XE
DTB743XM
SC-75A
|
NESG2046M33
Abstract: NESG2046M33-A NESG2046M33-T3-A
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY
|
Original
|
PDF
|
NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
|
Untitled
Abstract: No abstract text available
Text: DTB743X series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB743XM (SC-105AA) lFeatures DTB743XE SOT-416 (SC-75A) lInner circuit
|
Original
|
PDF
|
DTB743X
-200mA
-200mA
DTB743XM
SC-105AA)
DTB743XE
OT-416
SC-75A)
R1102A
|
Untitled
Abstract: No abstract text available
Text: , LJna. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.SA MJ16016 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEOOUS) = 450V(Min) • High Switching Speed APPLICATIONS
|
Original
|
PDF
|
MJ16016
|
|
|
SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
|
Original
|
PDF
|
08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
|
m33 tf 130
Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP
|
Original
|
PDF
|
NE68039
NE68139
NE68539
NE85639
OT-143
ne68000
ne68100
ne85600
UPA862TD
NE894
m33 tf 130
NESG204619
NESG2046
NESG2030M042
NESG2101M05
NE68030
NE68033
NE68039
NE68133
NE68539
|
siemens ferrite n22 p14
Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Text: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches
|
Original
|
PDF
|
|
UKA720
Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller
|
OCR Scan
|
PDF
|
TDA9150B
711002b
16-bit
7110fl2b
UKA720
TV horizontal Deflection Systems
zener diode 12c
TDA9150B
UKA716
pulse amplitude modulation using 555
|
sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
Text: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER
|
OCR Scan
|
PDF
|
OT143
OT343
BF510
BF994S
BST120
BF511
BF996S
BST122
BF512
BF997
sot23 marking M6p
PMBFJ111
PMBFJ174
|
200pHt
Abstract: 1010B 2SC3086 SC46 T0220AB
Text: Ordering number: EN 1010B No.ioioB II _ 2SC3086 NPN Triple Diffused Planar Silicon Transistor SAiYOl 50ÖV/3A Switching Regulator Applications Features . High breakdown voltage VgBg£800V . Fast switching speed. . Wide ASO. / Absolute Maxi m w Ratings at Ta=25 C
|
OCR Scan
|
PDF
|
1010B
2SC3086
00V/3A
00SQD4E
200pHt
1010B
2SC3086
SC46
T0220AB
|
Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00
|
OCR Scan
|
PDF
|
CMBT4403
23A33T4
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 00307b0 bbD * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
|
OCR Scan
|
PDF
|
bbS3T31
00307b0
PINNING-SOT186
BUK545-60A/B
BUK545
0Q307b4
|
LN1EE
Abstract: MIC58P01BWM
Text: MIC58P01 L 8-Bit Parallel-Input Protected Latched Driver General Description Features The MIC58P01 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor
|
OCR Scan
|
PDF
|
MIC58P01
500mA)
MIC5801,
MIC58P01
3g31h
1725-1C-12D
LN1EE
MIC58P01BWM
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.
|
OCR Scan
|
PDF
|
BF861A;
BF861B;
BF861C
BF861A:
BF861B:
BF861C:
|
