M69KB Search Results

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: M69KB096AA 64 Mbit 4M x16 1.8V Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and 85ns access time – Asynchronous Write

JESD97

Abstract: FBGA71 rl3410 M69AB048 E1-57 X 30 M69KB048BD
Contextual Info: M69KB048BD M69AB048BD 32 Mbit 2M x16 1.8V Supply, Burst PSRAMs Features • Asynchronous SRAM Interface ■ Fast Access Time: 70ns ■ Asynchronous Page Read – Page Size: 8 Words – First Access within page: 70ns – Subsequent read within page: 20ns

Contextual Info: M69KB096AA 64 Mbit 4M x16 1.8V Supply, 80MHz Clock Rate, Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and

Contextual Info: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes

M69KB096AB

Abstract: synchronous nor flash A0-A21 BCR10 tvs array bare die
Contextual Info: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes

RCR Resistor

Abstract: M69KB096AA A0-A21 BCR10 BCR8
Contextual Info: M69KB096AA 64 Mbit 4M x16 1.8V Supply, 80MHz Clock Rate, Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and

synchronous nor flash

Abstract: BCR10 M69KB128AB bcr100
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and

BCR10

Abstract: M69KB128AB
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and

10541

Abstract: A0-A21 BCR10 M69KB096AA M69KB
Contextual Info: M69KB096AA 64 Mbit 4M x16 1.8V Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and 85ns access time – Asynchronous Write

FBGA71

Abstract: VIH42 M69AB048 M69KB048BD
Contextual Info: M69KB048BD M69AB048BD 32 Mbit 2 Mb x16 1.8 V supply, burst PSRAMs Features • Asynchronous SRAM interface ■ Fast access time: 70 ns ■ Asynchronous page read – Page size: 8 words – First access within page: 70 ns – Subsequent read within page: 20 ns

Contextual Info: M69KB096AA 64 Mbit 4M x16 1.8V Burst PSRAM FEATURES SUMMARY • ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 3.3V for I/O buffers ASYNCHRONOUS MODES – Asynchronous Random Read: 70ns and 85ns access time – Asynchronous Write

PSRAM

Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Contextual Info: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

Contextual Info: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM

23LIST

Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

7900f-d

Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

M36P0R8070E0

Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
Contextual Info: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM

PSRAM

Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

PSRAM

Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory

M30L0R8000T

Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage

PSRAM

Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory

A0-A21

Abstract: M36W0R6050B1 M36W0R6050T1
Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM