MA2SD24 Search Results

MA2SD240G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD240G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For super high speed switching • Package ■ Features • Code SSMini2-F4 • Pin Name

MA2SD24

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05

MA2SD24

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.80+0.05 –0.03

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.80) 1.20+0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD240G Silicon epitaxial planar type For super high speed switching • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode 2: Cathode • Forward current (Average) I F(AV) = 200 mA rectification is

MA2SD240G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD240G Silicon epitaxial planar type For super high speed switching • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode 2: Cathode Th an W is k y

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD240G Silicon epitaxial planar type For super high speed switching • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Code SSMini2-F4 • Pin Name

MA2SD24

Contextual Info: Schottky Barrier Diodes SBD MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) (0.80) • IF(AV) = 200 mA rectification is possible

MA2SD24

Contextual Info: Schottky Barrier Diodes SBD MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5˚ (0.60) (0.80) • Forward current (Average) IF(AV) = 200 mA rectification is

Contextual Info: MA2SD24 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 • Features 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ 0.60 (0.80) • High rectification efficiency caused by its low forward-rise-voltage (VF)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05

Contextual Info: Schottky Barrier Diodes SBD MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 1.20+0.05 –0.03 (0.60) 0.80±0.05 0.01±0.01 5° (0.60) (0.80) • IF(AV) = 200 mA rectification is possible

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SMD R5D diode

Abstract: SMD code R5D 2099 smd marking smd MARKING r5b inverter pwm schematic buck converter SMD r5d parallel port programming fdc6420c r5d smd SMD marking code R1D
Contextual Info: SMB110 Preliminary Information Five Channel Programmable DC-DC System Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

Contextual Info: SMB214A/B/C Preliminary Information High-power, Three-channel Programmable DC-DC System Power Managers FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory • Output voltage set point

MA2SD24

Abstract: UNR31A3
Contextual Info: Multi Chip Discrete UP0KG8D Silicon epitaxial planar type SBD Silicon PNP epitaxial planar type (Tr) Unit: mm For digital circuits +0.05 0.20 –0.02 (0.30) 2 3 (0.50) (0.50) (0.20) 5° 1 1.00±0.05 (0.20) ue pl d in ea an c se ed lud pl vi an m m es si

k11 zener diode

Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2

Contextual Info: SMB120 Nine-Channel DC/DC Digitally Programmable System Power Manager FEATURES & APPLICATIONS Preliminary information INTRODUCTION • Digital programming of all major parameters via I2C interface and non-volatile memory o Output voltage set point o Output power-up/down sequencing

MA2SD240G

Abstract: UNR31A3G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete UP0KG8DG Silicon epitaxial planar type (SBD) Silicon PNP epitaxial planar type (Tr) For digital circuits • Package  Two elements incorporated into one package (SBD + Tr)

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

smd MARKING r5b

Abstract: R5C MARKING CODE SOT23 k 2101 MOSFET 0402 100N 16V Y5V fdc6420c smd transistor r5c QFN-32 0-10v dimming leds cg100 smd marking code r54
Contextual Info: SMB112 Preliminary Information Five-Channel Digitally Programmable White-LED and TFT/LCD Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I C 2 • • • • • • • interface and non-volatile memory