MARK N SOT23 Search Results

SC74A

Abstract: ME-R5511N R5511N022DB transistor SOT-23-5 R5511N004CB R5511N008CB R5511N009BB R5511N010AB R5511N011AB R5511N018AB
Contextual Info: MARK INFORMATION ME-R5511N-0510 R5511N SERIES MARK SPECIFICATION • SOT-23-5 SC-74A 1 • 2 3 4 1 , 2 4 , 5 , 3 5 Part Number vs. Product Code Part Number Product Code 1 2 3 R5511N004CB N R5511N008CB N 1 R5511N009BB N 2 R5511N010AB N 3 R5511N011AB N 4 R5511N018AB

Contextual Info: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­

NPN sot23 mark NF

Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
Contextual Info: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

A12 marking

Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
Contextual Info: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number

Contextual Info: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Contextual Info: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector

MMBF102

Abstract: fairchild amplifier Fairchild Semiconductor - Process Fairchild Semiconductor
Contextual Info: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted

MMBF4391

Abstract: PN4392 PN4393 J111 MMBF4392 MMBF4393 PN4391
Contextual Info: S em ico n d u cto r" PN4391 PN4392 PN4393 MMBF4391 MMBF4392 MMBF4393 SOT-23 Mark: 6 J/6 K /6 G N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J 111 for characteristics.

MMBT3702

Abstract: MMBT4403 2T MMBT2907 MMBT2907A MMBT4403 MMPQ2907 MMPQ6502
Contextual Info: This I O- Material In □ b-1 t-1 UJ Discrete POWER & Signal Technologies . É f^ Æ N a t i o n a l Semiconductor'" \y . Surface Mount Transistors CD Copyrighted □ O -C Ln a -p j: - i -J PNP General Purpose Amplifiers and Switches Device No. SOT-23 Mark

BCW65C

Contextual Info: N BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

5485 transistor

Abstract: DATASHEET OF TRANSISTOR 2N5485 MMBF5484 OF TRANSISTOR 2N5485 2N5485 equivalent 2N5484 2N5485 2N5486 CBVK741B019 MMBF5485
Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching

BCV27

Contextual Info: N BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

5-486

Abstract: 5484 junction MMBF5485 6B-6M cg100
Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G G S S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching

BCV26

Abstract: PNP DARLINGTON SOT-23
Contextual Info: N BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2N5486

Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
Contextual Info: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching

l5 transistor PNP

Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

pn4391

Abstract: process 51
Contextual Info: V : iC D N D U C T C 'R MMBF4391 MMBF4392 MMBF4393 PN4391 PN4392 PN4393 TO-92 G SOT-23 D S Mark: 6J / 6K / 6G N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.

Contextual Info: PN4391 / 4392 / 4393 / MMBF4391 / 4392 / 4393 MMBF4391 MMBF4392 MMBF4393 PN4391 PN4392 PN4393 G S G S TO-92 SOT-23 D D Mark: 6J / 6K / 6G NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample

MMBF4091

Contextual Info: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample

MMBF4416A

Contextual Info: MMBF4416A MMBF4416A N-Channel RF Amplifier G • This device is designed for RF amplifiers. • Sourced from process 50. S D SOT-23 Mark: 6BG Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value 35 Units

4093 N

Abstract: 4093 application 4093 datasheet MMBF4091 CBVK741B019 J111 MMBF4092 MMBF4093 PN4091 PN4092
Contextual Info: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample

4392

Abstract: 4393
Contextual Info: PN4391 / 4392 / 4393 / MMBF4391 / 4392 / 4393 MMBF4391 MMBF4392 MMBF4393 PN4391 PN4392 PN4393 G S G S TO-92 SOT-23 D D Mark: 6J / 6K / 6G NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample