MARKING 3DS Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

HALL Sensor TO92UA

Abstract: 525k hall sensor 525k
Contextual Info: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

SMD Hall sensors code C

Abstract: 525E 4 Pin SMD Hall sensors 4 lead SMD Hall sensors SMD Hall C smd hall sensor SMD Hall sensors SMD Hall sensors code TRANSISTOR SMD MARKING CODE 42 HAL525
Contextual Info: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Marking 3ds sot

Abstract: Q62702-C2532 VPS05604
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code

Contextual Info: MEMORY MODULE SRAM 512Kx8-SOP 3DSR4M08CS1271 Static Ram MODULE 4 Mbit SRAM organized as 512Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Fast Access Time : 12, 15 or 20ns. - Organized as 512K x 8-bit - Single +5  0.5V power supply - TTL Compatible Input and Outputs.

3DFP

Contextual Info: MEMORY MODULE SRAM 512Kx8-SOP 3DSR4M08CS1271 Static Ram MODULE 4 Mbit SRAM organized as 512Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Fast Access Time : 12, 15 or 20ns. - Organized as 512K x 8-bit - Single +5 ± 0.5V power supply - TTL Compatible Input and Outputs.

Contextual Info: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)

Contextual Info: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)

3DSD3G48VQ6486

Contextual Info: MEMORY MODULE SDRam 64Mx48-QFP Synchronous Dynamic Ram MODULE 3DSD3G48VQ6486 3Gbit SDRam organized as 64Mx48, based on 32Mx16 Pin Assignment Top View QFP 114-(Pitch : 0.635mm) - Organized as 64Mx48-bit. - Single +3.3V power supply. 27 28 29 30 31 32 33 34

3DSD1G16VS2494

Contextual Info: -pJusTj ^ MEMORY MODULE SDRam 64Mx 16-SOP a HEICO company Synchronous Dynamic Ram MODULE 3DSD1G16VS2494 1Gbit SDRam organized as 64Mx16, based on 32Mx16 Pin Assignment Top View SOP 58 - (Pitch : 0.80 mm) Features - Organized as 64Mx16-bit. - Single +3.3V power supply.

TO92UT-1

Abstract: 3DS 05 HAL810 HAL810UT-K hall device 810 TO92UT 810a marking code transistor
Contextual Info: DATA SHEET MICRONAS Edition June 24, 2004 6251-536-3DS HAL810 Programmable Linear Hall Effect Sensor MICRONAS HAL 810 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features

sensor 815a

Abstract: Hall effect 815a HAL815UT-K HAL805 HAL810 HAL815 Hall Effect Current Measurements TO92UT-1 Micronas HAL805 hall sensors for magnetic measurements
Contextual Info: Hardware Documentation Data Sheet HAL 815 Programmable Linear Hall-Effect Sensor Edition Feb. 7, 2006 6251-537-3DS HAL 815 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software

805K

Abstract: transistor 805A HAL805UT-K 90MT
Contextual Info: Hardware Documentation Data Sheet HAL 805 Programmable Linear Hall-Effect Sensor Edition Feb. 14, 2006 6251-513-3DS HAL 805 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software

506A Magnetic Sensors

Abstract: hall 508k Hall Effect Sensor Family 503K 3 PIN hall effect 506k 509K hall effect IC hall effect position sensor 503 HAL502 HAL503 HAL505 HAL506
Contextual Info: DATA SHEET MICRONAS Edition Oct. 7, 2002 6251-485-3DS HAL501.506, 508, 509, HAL516.519, 523 Hall Effect Sensor Family MICRONAS HAL5xx DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview

506A Magnetic Sensors

Abstract: 3 PIN hall effect 506k HAL 506K 502K hall hall effect position sensor 503 hall effect transistor 502a 518K 506a hall HAL 503 APPLICATION NOTE 504K
Contextual Info: DATA SHEET MICRONAS Edition Sept. 20, 2002 6251-485-3DS HAL501.506, 508, 509, HAL516.519, 523 Hall Effect Sensor Family MICRONAS HAL5xx DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features

RFC-896

Contextual Info: Freescale Semiconductor, Inc. :KLWH 3DSHU %ULQJLQJ &RPSUHKHQVLYH 4XDOLW\ RI 6HUYLFH &DSDELOLWLHV WR 1H[W*HQHUDWLRQ 1HWZRUNV Freescale Semiconductor, Inc. By: Dr. Syed Ijlal Ali Shah, TM Product Line Manager for Motorola’s C-Port Family of Network Processors

3D Plus

Abstract: PQFP64 3D-PLUS F7853 3D Plus sram 3DS16-325 3D plus memory 16 f78532
Contextual Info: PRELIMINARY 16Mbit CMOS SRAM ELECTRONICS 3DS16-325 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating FEATURES DESCRIPTION Fast Access Time : 15 or 20ns Single 5.0 ± 0.5V Power Supply Power Dissipation - Standby 80mA - Operating 540mA Max. TTL Compatible Inputs and Outputs

transistor marking 6c1

Abstract: transistor marking E2 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

sot363 marking DATE code

Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor marking 6c1

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see