MARKING 4T Y Search Results

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage

Contextual Info: DB3S308F Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 4T

R/varistor m251

Contextual Info: ALUMINUM HOUSED RESISTORS RESISTORS 'C A PS * COILS 'D ELA Y LINE3 600 SERIES □ □ □ □ □ Standard units feature lug terminals 605 - 630 or threaded terminals (635 & 640). W idest selection in the industry! 5 to 1000 Watt 0.005Qto1 MO, tolerance to ,01%, TC to 5ppm

Contextual Info: SILICON NPN EPITAXIAL T Y P E 2SC2996 F M /A M , RF, M IX , LOCAL, IF HIGH FREQUENCY AMPLIFIEP APPLICATIONS. FEATURES : • High Stability Oscillation Voltage On FM Local Oscillator. • Recommend FM/AM RF, MIX, Local and IF. M A X IM U M RATINGS <Ta = 2 5°C

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

diode marking 4t

Abstract: LMDL301T1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

diode marking 4t

Abstract: 4t marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes LMBD301LT1G S-LMBD301LT1G Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

MMBD501

Abstract: MMBD201 marking a2x sot23 MMBD201 4s MBAV70 5c 70 marking A7x marking 5AX a1x sot23 MBAW56
Contextual Info: MOTOROLA SC DIODES/OPTO 1â D SOT-23 DIODES • -W — STYLE 12 t.3b?aSS G G 7 A b E b — STYLE 9 STYLE 11 2 0 - \4— 3 0 - 3I 02 2 y- |4~-00 1 P | -3 0 -H - O0 22 01 SINGLE COMMON CATHODE A 3 SERIES

LMDL301T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

smd diode marking zf

Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Contextual Info: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •

Sirius 250 handbook

Abstract: 17132 coutant power supply 5V Coutant 15V 250v 16a 250w relay switch 5volts dc supply IEC 60320 C5 120-360VDC f6.3ah F63Ah
Contextual Info: Sirius 250 Handbook Part Number 17132 Input Parameters NOMINAL INPUT VOLTAGE RANGE 94.5 - 240VAC or 133-330VDC MAX. INPUT VOLTAGE RANGE 85-264VAC or 120-360VDC INPUT FREQUENCY 47-63Hz MAXIMUM INPUT CURRENT 5A AC or 3.4A DC INRUSH CURRENT <50 AMPS Output Parameters

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

Contextual Info: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK151 TV TUNER VHF M IXER APPLICATIONS. Unit in mm + 0i3 2 .9 —0.3 VHF RF A MPLIFIER APPLICATIONS. FEATURES: B . High Conversion Fain : G cs= 2 4 .5 d B T y p . . Low Noise Figure : N F c g = 3 .3 d B ( T y p .) — Id

178 08T

Abstract: 1571840000
Contextual Info: Other Applications Mounting Rail Applications If you wish to use our connectors in non-pcb applications, you will find a selection of solutions for mounting rails, through-panel connections, socket adaptors, and more information on Through-Hole-Reflow SMT process on

2SC0100

Abstract: SC311 SC311-4 SC311-6 00D3T MARKING hc
Contextual Info: SC311 0.5A I FAST RECOVERY d io d e I Features Outline Drawing Marking • Surface mount device • High voltage by mesa design • High reliability CATHODE MARKING SYMBOL A -. . HC 1 1.4 J /A I Applications • - MONTH • High speed switching

spst illuminated

Abstract: DPsT 4 terminal switch
Contextual Info: RC SPECIFICATIONS Switch Function Electrical Ratings Electrical Life Contact Resistance Dielectric Strength Insulation Resistance Operating Temperature Storage Temperature SPST, DPST 10A @ 125VAC/250VAC 10,000 cycles typical < 50 mΩ initial 1000Vrms min

Contextual Info: R A D I ALL TECHNICAL DATA SHEET Microwave components 3GHz OPTIONS : N N/O R573 0 1 24 0 0 S.P.4T. Page 1/ 2 SWITCH INDICATOR R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 4 0 - 3 GHz 50 Ohms <=| INSERT. LOSS <=] ISOLATION C D V.S.W.R 1

Contextual Info: Product specification MMBD301 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5

MMBD301

Abstract: BV SMD marking 4T sot-23
Contextual Info: Diodes SMD Type Schottky Barrier Diode MMBD301 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5

Contextual Info: R A D I ALL TECHNICAL DATA SHEET Microwave components 3 GHz OPTIONS : N N/O R573 012405 S.P.4T. Page 1/ 2 SWITCH INDICATOR R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 4 0 - 3 GHz 50 Ohms <=| INSERT. LOSS <=] ISOLATION C D V.S.W.R 1 FREQUENCY GHz |

Contextual Info: R A D I ALL Microwave components 3GHz OPTIONS : TE C H N IC A L DATA SHEET SMA N /O R5 7 3 3 1 2 4 0 0 S.P.4T. Page 1/ 2 S W IT C H INDICATOR R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 4 0 - 3 GHz 50 Ohms <=| INSERT. LOSS <=] ISOLATION

stk+413+430

Contextual Info: §391 RADI ALL TECHNICAL DATA SHEET 18GHz OPTIONS : INDICATOR SMA N/O R573413430 S. P. 4T. Page 1/ 2 SWITCH /SUPP.DIODES R F CHARACTERISTICS | 4 0 - 1 8 GHz 50 Ohms INUMdth III" WAYS FREQUENCY RANGE IMPEDANCE <=| 3 | 1 V.S.W.R 0 - GO FREQUENCY GHz | CO