MARKING 4T Y Search Results

2SJ0672

Abstract: 2SK3539 UP04979
Contextual Info: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage

Contextual Info: DB3S308F Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 4T

R/varistor m251

Contextual Info: ALUMINUM HOUSED RESISTORS RESISTORS 'C A PS * COILS 'D ELA Y LINE3 600 SERIES □ □ □ □ □ Standard units feature lug terminals 605 - 630 or threaded terminals (635 & 640). W idest selection in the industry! 5 to 1000 Watt 0.005Qto1 MO, tolerance to ,01%, TC to 5ppm

Contextual Info: SILICON NPN EPITAXIAL T Y P E 2SC2996 F M /A M , RF, M IX , LOCAL, IF HIGH FREQUENCY AMPLIFIEP APPLICATIONS. FEATURES : • High Stability Oscillation Voltage On FM Local Oscillator. • Recommend FM/AM RF, MIX, Local and IF. M A X IM U M RATINGS <Ta = 2 5°C

5962-9201001MXC

Abstract: 5962-9201001 QML-38535 VIC068A 4T SMD CODE Defense Supply Center Columbus TB28 Motorola smd marking codes CMGA7-P145 35T3
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R075-95. – LTG 95-03-30 Monica L. Poelking B Change AC limits in table I. Correct pin names in figure 2, figure 3, figure 4, and table III. Update boilerplate. Editorial changes throughout. – TVN

BARF

Abstract: carbon variable resistor ja-pa7
Contextual Info: TOC=OS 33% TOCOS AMERICA .INC. Specifications ~~5311 1% % % Model 'q iS$ &% Carbon film variable resistor as4 Customer Specification Number i4P+M!HM Customer Part Name i4P*L-afis4 Customer Yart Number Amf% TOCOS Part Name %*ii*#%% TOCOS Specification Number

S0MC

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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

diode marking 4t

Abstract: LMDL301T1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

diode marking 4t

Abstract: 4t marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes LMBD301LT1G S-LMBD301LT1G Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

transistor rf cm 1104

Abstract: SL 1424 11p
Contextual Info: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

MMBD501

Abstract: MMBD201 marking a2x sot23 MMBD201 4s MBAV70 5c 70 marking A7x marking 5AX a1x sot23 MBAW56
Contextual Info: MOTOROLA SC DIODES/OPTO 1â D SOT-23 DIODES • -W — STYLE 12 t.3b?aSS G G 7 A b E b — STYLE 9 STYLE 11 2 0 - \4— 3 0 - 3I 02 2 y- |4~-00 1 P | -3 0 -H - O0 22 01 SINGLE COMMON CATHODE A 3 SERIES

Contextual Info: MMDL301 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: MMBD301 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

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Contextual Info: MMBD330 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: NOV. Sene 260 Series 260 T rimmpotentiometer C ennet Trimming Potentiom eters Cermet y U I T R O H M M. *4tW4SM/TDM Rn. +4t 041M/T27«7 Technische Daten Specification Typ 260 Type Nennbelastbarkeit P70 W 0,25 Power rating Widerstandswerte 10R 20R 50R a Resistance value

JIS-C6443

Abstract: RH96N74 HST15
Contextual Info: m'J $& zs )%8 %F\ Model Carbon film variable resistor i3P+kM%%% Customer Specification Number m+t#*a% Customer Part Name m+kEPa"a%% Customer Part Number %+tJf%3 TOCOS Part Name XFZJX€XZ&#S~% TOKYO COSMOS ELECTRIC CO., L T D . n*%t%% :8 7228-8510 l % 2-268

smd diode marking zf

Abstract: DF10SC4M smd diode marking c MTKM Diode 1_b SMD
Contextual Info: Schottky Barrier Diode Twin Diode w nnm o u tlin e DF10SC4M 4 0 V 10 A Feature • SM D • SMD • P rrsm T K ^ V S / i & S I • Prrsm Rating 1High lo Rating-Small-PKG » 'J i3 ü * S S 3 S g l Main Use • D C /D C n y i K — S> • mm. y-A.oA&gg • •

Sirius 250 handbook

Abstract: 17132 coutant power supply 5V Coutant 15V 250v 16a 250w relay switch 5volts dc supply IEC 60320 C5 120-360VDC f6.3ah F63Ah
Contextual Info: Sirius 250 Handbook Part Number 17132 Input Parameters NOMINAL INPUT VOLTAGE RANGE 94.5 - 240VAC or 133-330VDC MAX. INPUT VOLTAGE RANGE 85-264VAC or 120-360VDC INPUT FREQUENCY 47-63Hz MAXIMUM INPUT CURRENT 5A AC or 3.4A DC INRUSH CURRENT <50 AMPS Output Parameters

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes LMBD301LT1G 3 These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital