MARKING 82 SOT343 Search Results

marking kxs

Abstract: BF5030R BF5030 BF5030W BFP181 BFP181R BGA420
Contextual Info: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance

Contextual Info: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 4 • Supporting 5 V operations and 1 2 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance

Contextual Info: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance

transistor K 2333

Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain

MOSFET 7121

Abstract: 9935 mosfet
Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

BF1217WR

Abstract: mosfet cross reference
Contextual Info: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive

k2056

Abstract: Hitachi DSA002743
Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C Z 4th. Edition May 1, 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

1SV70

Abstract: BB305C Hitachi integrated circuit 1115 DSA003643
Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608D Z 5th. Edition Mar 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

1SV70

Abstract: BB305C SC-82AB Hitachi DSA00396
Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C Z 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

Contextual Info: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

BB305CEW

Abstract: 1SV70 BB305C
Contextual Info: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-608C Z 4th. Edition May 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

MBC13916

Abstract: motorola zc 527 5cm1
Contextual Info: Technical Data MBC13916/D Rev. 0, mm/2002 MBC13916 General Purpose SiGe:C RF Cascode Amplifier Scale 2:1 Package Information Plastic Package Case 1404 (SOT-343R) Ordering Information Device Device Marking Package MBC13916T1 916 SOT-343R The MBC13916 is a cost-effective, high isolation amplifier fabricated with Motorola’s

1SV70

Abstract: BB305C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1SV70

Abstract: BB305C
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BCR401W

Contextual Info: BCR401W LED Driver • Supplies stable bias current even at low battery 3 voltage 2 4 • Suitable for PWM control up to 100kHz 1 • Ideal for stabilizing bias current of LEDs • Negative temperature coefficient protects LEDs against thermal overload 4 1

marking 82 sot343

Abstract: BCR401W BGA420
Contextual Info: BCR401W LED Driver • Supplies stable bias current even at low battery 3 voltage 2 4 • Suitable for PWM control up to 100kHz 1 • Ideal for stabilizing bias current of LEDs • Negative temperature coefficient protects LEDs against thermal overload 4 3

Contextual Info: BCR401W LED Driver Target data sheet • Supplies stable bias current even at low battery voltage 3 2 4 • Suitable for PWM control up to 100kHz 1 • Ideal for stabilizing bias current of LEDs • Negative temperature coefficient protects LEDs against thermal overload

BGA2001

Abstract: RNR-T45-98-0260 BGA2003 BP317 MLG1608 philips application notes MARKING A1
Contextual Info: APPLICATION INFORMATION Demoboard for the BGA2001 900 and 1800 MHz Application Note Philips Semiconductors Application information Demoboard for the BGA2001 (900 and 1800 MHz) Application Note SUMMARY • Description of products BGA2001: RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for

"MARKING CODE LE"

Abstract: dual-gate BF1202WR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES

BF1201WR

Abstract: dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES

"MARKING CODE MH"

Abstract: BF904A BF904AR BF904AWR marking CODE MH
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual gate MOS-FETs FEATURES BF904A; BF904AR; BF904AWR