marking kxs
Abstract: BF5030R BF5030 BF5030W BFP181 BFP181R BGA420
Text: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance
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BF5030.
EHA07461
BF5030
OT143
BF5030R
OT143R
marking kxs
BF5030R
BF5030
BF5030W
BFP181
BFP181R
BGA420
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Untitled
Abstract: No abstract text available
Text: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 4 • Supporting 5 V operations and 1 2 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance
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BF5030.
EHA07461
BF5030
OT143
BF5030R
OT143R
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Untitled
Abstract: No abstract text available
Text: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance
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BF5030.
EHA07461
BF5030
OT143
BF5030R
OT143R
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transistor K 2333
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain
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M3D124
BGA2001
SCA60
budgetnum/printrun/ed/pp11
transistor K 2333
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MOSFET 7121
Abstract: 9935 mosfet
Text: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
BF1217WR
OT343R
MOSFET 7121
9935 mosfet
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Untitled
Abstract: No abstract text available
Text: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
BF1217WR
OT343R
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BF1217WR
Abstract: mosfet cross reference
Text: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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BF1217WR
BF1217WR
OT343R
mosfet cross reference
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k2056
Abstract: Hitachi DSA002743
Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C Z 4th. Edition May 1, 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
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BB305C
ADE-208-608C
OT-343mod)
BB305C
D-85622
k2056
Hitachi DSA002743
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1SV70
Abstract: BB305C Hitachi integrated circuit 1115 DSA003643
Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608D Z 5th. Edition Mar 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
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BB305C
ADE-208-608D
OT-343mod)
BB305C
1SV70
Hitachi integrated circuit 1115
DSA003643
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1SV70
Abstract: BB305C SC-82AB Hitachi DSA00396
Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C Z 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
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BB305C
ADE-208-608C
OT-343mod)
BB305C
1SV70
SC-82AB
Hitachi DSA00396
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Untitled
Abstract: No abstract text available
Text: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
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BB305C
REJ03G0828-0600
ADE-208-608D)
OT-343mod)
PTSP0004ZA-A
BB305C
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BB305CEW
Abstract: 1SV70 BB305C
Text: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
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BB305C
REJ03G0828-0600
ADE-208-608D)
OT-343mod)
PTSP0004ZA-A
BB305C
BB305CEW
1SV70
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MBC13916
Abstract: motorola zc 527 5cm1
Text: Technical Data MBC13916/D Rev. 0, mm/2002 MBC13916 General Purpose SiGe:C RF Cascode Amplifier Scale 2:1 Package Information Plastic Package Case 1404 (SOT-343R) Ordering Information Device Device Marking Package MBC13916T1 916 SOT-343R The MBC13916 is a cost-effective, high isolation amplifier fabricated with Motorola’s
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MBC13916/D
mm/2002
MBC13916
OT-343R)
MBC13916T1
OT-343R
MBC13916
MRFIC0916
OT-343R
MRFIC0916,
motorola zc 527
5cm1
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BB301C
Abstract: K2068
Text: BB301C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0823-0300 Previous ADE-208-507A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
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BB301C
REJ03G0823-0300
ADE-208-507A)
200pF,
OT-343mod)
PTSP0004ZA-A
BB301C
K2068
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1SV70
Abstract: BB305C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BCR401W
Abstract: No abstract text available
Text: BCR401W LED Driver • Supplies stable bias current even at low battery 3 voltage 2 4 • Suitable for PWM control up to 100kHz 1 • Ideal for stabilizing bias current of LEDs • Negative temperature coefficient protects LEDs against thermal overload 4 1
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BCR401W
100kHz
EHA07188
OT343
BCR401W
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marking 82 sot343
Abstract: BCR401W BGA420
Text: BCR401W LED Driver • Supplies stable bias current even at low battery 3 voltage 2 4 • Suitable for PWM control up to 100kHz 1 • Ideal for stabilizing bias current of LEDs • Negative temperature coefficient protects LEDs against thermal overload 4 3
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BCR401W
100kHz
EHA07188
OT343
marking 82 sot343
BCR401W
BGA420
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Untitled
Abstract: No abstract text available
Text: BCR401W LED Driver Target data sheet • Supplies stable bias current even at low battery voltage 3 2 4 • Suitable for PWM control up to 100kHz 1 • Ideal for stabilizing bias current of LEDs • Negative temperature coefficient protects LEDs against thermal overload
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BCR401W
100kHz
EHA07188
OT343
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BGA2001
Abstract: RNR-T45-98-0260 BGA2003 BP317 MLG1608 philips application notes MARKING A1
Text: APPLICATION INFORMATION Demoboard for the BGA2001 900 and 1800 MHz Application Note Philips Semiconductors Application information Demoboard for the BGA2001 (900 and 1800 MHz) Application Note SUMMARY • Description of products BGA2001: RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for
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BGA2001
BGA2001:
SCA62
125006/3100/01/pp8
BGA2001
RNR-T45-98-0260
BGA2003
BP317
MLG1608
philips application notes
MARKING A1
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"MARKING CODE LE"
Abstract: dual-gate BF1202WR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES
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BF1202;
BF1202R;
BF1202WR
BF1202WR
budgetnum/printrun/ed/pp10
"MARKING CODE LE"
dual-gate
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BF1201WR
Abstract: dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Preliminary specification 1999 Nov 26 Philips Semiconductors Preliminary specification BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs PINNING FEATURES
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BF1201;
BF1201R;
BF1201WR
BF1201WR
budgetnum/printrun/ed/pp10
dual-gate
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"MARKING CODE MH"
Abstract: BF904A BF904AR BF904AWR marking CODE MH
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual gate MOS-FETs FEATURES BF904A; BF904AR; BF904AWR
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BF904A;
BF904AR;
BF904AWR
MSB014
BF904A
125004/00/03/pp16
"MARKING CODE MH"
BF904AR
BF904AWR
marking CODE MH
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Untitled
Abstract: No abstract text available
Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-608C Z 4th. Edition May 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)
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BB305C
ADE-208-608C
OT-343mod)
BB305C
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