MARKING C1 SOT363 Search Results

MARKING KE2

Contextual Info: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2

MMBZ5221BS

Abstract: MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2
Contextual Info: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A A1 KXX Mechanical Data • · · · · C1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2

BAV99S

Abstract: VPS05604
Contextual Info: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s

6A1 diode

Abstract: BAW56S VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

BAW56S

Abstract: 6A1 diode VPS05604
Contextual Info: BAW56S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Common anode
Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration

6A1 diode

Abstract: 7006S VPS05604
Contextual Info: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: A7s marking diode
Contextual Info: BAV 99S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Connected in series
Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration

ic7001

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s Q62702-A1253 1/4 = C1 2/5 = C2 Package

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

VPS05604

Contextual Info: BAS 16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

BAS16S

Abstract: VPS05604 4C3 diode
Contextual Info: BAS16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

marking s6 sot363

Contextual Info: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical

5a2 DIODE

Abstract: Diode Marking WA diode a4s BAV70S marking code diode wp
Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array 1For high speed switching applications 1Common cathode •Internal galvanic isolated Diodes Arrays in one package C1/C2 U *1 Fl Fl FI U*t lil2 a Ü' c i/c a Type Marking Ordering Code Pin Configuration BAV 70S

Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current

Contextual Info: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

BAV70S

Abstract: Q62702-A1097 5a2 DIODE
Contextual Info: BAV 70S Silicon Switching Diode Array • For high speed switching applications • Common cathode • Internal galvanic isolated Diodes Arrays in one package Type Marking Ordering Code Pin Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363

TFK 715

Abstract: BAW56S
Contextual Info: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363

183S

Abstract: Q62702-C2377
Contextual Info: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363