MARKING CG SOT23 Search Results

BCX70L

Abstract: BCX70
Contextual Info: UTC BCX70 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR MARKING 1 CG 2 3 SOT-23 1: Emitter 2: Base 3: Collector *Pb-free plating product number: BCX70L ABSOLUTE MAXIMUM RATINGS Ta = 25℃ unless otherwise noted PARAMETER Collector-Base Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS „ DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

CAPACITOR MICROPHONE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

SOT-113S

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS  DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70XLT1G Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

BAS70

Abstract: BAS70-04 LBAS70-06LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage LBAS70LT1G Series Guard ring protected Low diode capacitance. 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

30255

Abstract: qSOT-23
Contextual Info: M O T O R O L A SC i D I O D E S / O P T O } 6 3 6 7 2 5 5 M O T O R O L A SC 34 DF|b3b72SS DIODES/OPTO 34C 003Ô2SS q 30255 SOT23 (continued) BCW66F,G,H DEVICE NO. SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C I I • *— ' - t =i B Device D e s ig n e d fo r lo w -freq u en cy d river s ta g e an d switching

Contextual Info: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA

MMBTA05

Abstract: MMBTA06 MMBTA55 MMBTA56 marking K2H
Contextual Info: MMBTA55 / MMBTA56 TRANSYS ELECTRONICS PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 -H h -A fcl TOP VIEW

"Marking k2" mmic

Abstract: TLX-9-0150-CH
Contextual Info: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain

MARKING CODE CGK

Contextual Info: SN74LVC1G32 www.ti.com SCES219Q – APRIL 1999 – REVISED JANUARY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

C32F

Abstract: marking C32R C32K marking code C32f MARKING CODE CGK CG5 marking C325 marking CGK sn74lvc1g32dry2 SCES219R
Contextual Info: SN74LVC1G32 www.ti.com SCES219R – APRIL 1999 – REVISED JUNE 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation

Contextual Info: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

C32F

Contextual Info: SN74LVC1G32 www.ti.com SCES219Q – APRIL 1999 – REVISED JANUARY 2013 SINGLE 2-INPUT POSITIVE-OR GATE Check for Samples: SN74LVC1G32 FEATURES 1 • 2 • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C