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    MARKING CODE 21E Search Results

    MARKING CODE 21E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 21E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VPS05604

    Abstract: No abstract text available
    Text: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C


    Original     		PDF 3904PN VPS05604 3904PN Q62702-C OT-363 EHP00757 EHP00760 VPS05604

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/

    transistor marking 6c1

    Abstract: No abstract text available
    Text: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN


    Original     		PDF BC846PN/UPN BC847PN BC846PN BC846UPN EHA07177 OT363 transistor marking 6c1

    transistor marking 6c1

    Abstract: No abstract text available
    Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see


    Original     		PDF BC856S/U BC857S BC856S BC857S: EHA07175 BC856U transistor marking 6c1

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1


    Original     		PDF SMBT3904. SMBT3904PN SMBT3904UPN EHA07177 OT363 20may

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks

    transistor marking RHs

    Abstract: BCR108S BFS483 bcr1 marking RHs
    Text: BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistor in one package • For orientation in reel see


    Original     		PDF BFS483 EHA07196 OT363 transistor marking RHs BCR108S BFS483 bcr1 marking RHs

    BFS481

    Abstract: infineon marking RFs BCR108S
    Text: BFS481 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 • Two galvanic internal isolated Transistors in one package • For orientation in reel see


    Original     		PDF BFS481 EHA07196 OT363 BFS481 infineon marking RFs BCR108S

    marking code VV transistors

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process


    Original     		PDF OT-89 OD-123+ 060TYP M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH FM140-MH marking code VV transistors

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARKING CODE ag SMD TRANSISTOR MARKING 2e TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 1v TRANSISTOR SMD MARKING CODE 2X 6 TRANSISTOR SMD MARKING CODE 2e marking 2X smd code marking 1G
    Text: BFR460L3 NPN Silicon RF Transistor Preliminary data • For low voltage / low current applications 3 • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 1 • World's smallest SMD leadless package 2 • Excellent ESD performance


    Original     		PDF BFR460L3 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARKING CODE ag SMD TRANSISTOR MARKING 2e TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 1v TRANSISTOR SMD MARKING CODE 2X 6 TRANSISTOR SMD MARKING CODE 2e marking 2X smd code marking 1G

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan     		PDF Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103

    Transistor BFR 181w

    Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
    Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1491 OT-323 Transistor BFR 181w GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
    Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B


    OCR Scan     		PDF Q68000-A6481 OT-23 EHN0005 EHN00056 10CK2, Jan-22-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222a sot23 2222A transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 5087 PNP Silicon Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz Type Marking Ordering Code Pin Configuration SMBT 5087 s2Q Q68000-A8319


    OCR Scan     		PDF Q68000-A8319 OT-23 P00792 Jan-22-1999 120Hz P00793 10kHz

    ac 0624 transistor 17-33

    Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
    Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF F1217 OT-143 ac 0624 transistor 17-33 uc 1604 0166 415 04 1 060 transistor cq 529

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Conf igural ion 1 2 4 3 Package1*


    OCR Scan     		PDF Q62702-Z2030 OT-223 PZT3906 EHP0071J

    sot marking code ZS

    Abstract: transistor bf 290
    Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration


    OCR Scan     		PDF OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290

    CD601CR126

    Abstract: CD601CR127 CD601CR128 CD601CR129 CD601CR130 CD601CR131 seriel Delay Modules
    Text: - -• *’ ■ '~Â-' -aa i'iÆi.,EÎi: DESIGNATRONICS/AUTOflATIC 21E D 277350b OGQOia? b T- 47-13: if 6 | ^ y | |l | ^ t 3 | i | I '-14 PIN. 10 TAP TTL input and outputs Precise and stable delays Reliable hybrid construction No external com po n en ts required


    OCR Scan     		PDF 277350b 0GQ01Ã 10TTL 20TTL CD601CR126 CD601CR127 CD601CR128 CD601CR129 CD601CR130 CD601CR131 seriel Delay Modules

    dap 001

    Abstract: H045 CD521A-102 CD521A-101 CD521A-103 CD521A-104 CD521A-105 CD521A-106 CD521A-107 CD521A-108
    Text: D E S I G N A T R O N I C S / A U T OMATIC 21E D 277350b QQ0017T 7 TÎTÎMP î çjl jftiàil D61 aVï M O d u le , 1 ap i n , 5 T A P TTL input and outputs Leading & Trailing Edge Accuracies Precise and stable delays Reliable hybrid construction No external components required


    OCR Scan     		PDF 277350b 0QGD17T 10TTL 20TTL CD521A-XXX dap 001 H045 CD521A-102 CD521A-101 CD521A-103 CD521A-104 CD521A-105 CD521A-106 CD521A-107 CD521A-108

    CD501A-101

    Abstract: CD501A-102 CD501A-103 CD501A-104 CD501A-105 CD501A-106 CD501A-107 20TTL CD501A-110
    Text: DESIGNATRONICS/AUTOMATIC 21E D 5 7 7 3 S â b 00001 70 S TTL input and outputs Precise and stable delays Reliable hybrid construction No external components required Fan out 10TTL loads/tap, 20TTL loads/package Operating temperature 0° to 70°C Storage temperature -55° to +125°


    OCR Scan     		PDF 000Q17Ã 10TTL 20TTL equivD501A-112 CD501A-113 CD501A-114 CD501A-115 CD501A-116 CD501A-117 CD501A-101 CD501A-102 CD501A-103 CD501A-104 CD501A-105 CD501A-106 CD501A-107 CD501A-110

    PIN14

    Abstract: dap 001
    Text: DE SI GN A T R O N I O S / AUTOMATIC 21E D 577350b 00001Ô 4 0 i IIS ?;•'’i t s D îg it^ tîê J^ lM ô d u l^ ^ ï^ ^ / i * . - •'■' ■ '•-y' £ y! * £&•fefe?’ •■ * •—:. = *'•* •.>; "-> * _- IP - £¿~T' $g% £sét& $?3 ■.dhxm»áiáigatM^!tm‘ -


    OCR Scan     		PDF 277350b 10TTL 20TTL CD511A-116 CD511A-117 CD511A-XXX PIN14 dap 001

    MXO-55GA-2C

    Abstract: MX055GA-2C mx055ga CTS Knights mil-std-883 random MXO-55 CX-065 cx065 MXO-55GA-2C-16 DIODE GOC 44
    Text: C T S E L E C T R O N IC S /KN I GH TS 17ams 21E D CTS. CO R PO R A TIO N KIMIGHTS D IV IS IO N O OQGQOSO 4 • SPECIALISTS IN FREQUENCY MANAGEMENT 400 Reimann Ave., Sandwich, IL 60548 • 815/786-8411 • TW X 910-642-0860 C able CTS FAX 815-786-9743 Engineering Data For Hybrid Oscillators


    OCR Scan     		PDF 00Q0050 MIL-STD-883. MIL-STD-883, 10ppm MXO-55GA-2C MX055GA-2C mx055ga CTS Knights mil-std-883 random MXO-55 CX-065 cx065 MXO-55GA-2C-16 DIODE GOC 44