MARKING H2A Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: T HI R D ANGLE PROJECTI O N Type d esig nat I 0 n ECQUL A LTERATION Part N o . I Cap . ￨ { F μ F ) ECQU2Al02 ) LA 10.001 l: t10児 H2A122 ( ) LA 10.0012 H2A1520 LA 10.0015 H2A1820 LA 10.0018 N2A2220 LA 10.0022 H2A2720 LA 10.0027 H2A3320 LA 10.0033

2N4401 EBC

Abstract: marking 1F SMT3 marking r2k MARKING G1.G IC marking R2k MMST8598 marking G3K
Contextual Info: Transistors USA / European specification models types [Surface mounting type] • U M T 3 /N P N type General purpose small signal amplifiers Product name BC84Ô8W BVcbo BVceo BViao Min. Min. Min. V (V) (V) 5 30 30 • U M T 3 / PNP ic Max. CmA) iCBO Max.

Contextual Info: T H I R DA N G L EP R O J E C T I O NI ALTERATION I S S U E RATED CAP DIMENSIONS ITEM CODE H G VOLTAGE F T F * L . 01 ( 103) 13 ECQE2A1030T 250VAC O .0 5 . 5 1O . 8 1O .0 1 .0 1 1 1 1 112A1230T O . 012 (123) 1 .5 6 .0 1 1 1 1 O . 015 (153) rr2A1530T .9

capacitor 221 1kv

Abstract: 104 Ceramic Disc Capacitors 100v 104 DISC capacitor 103 Ceramic Disc Capacitors 271 Ceramic Disc Capacitors capacitor 103 1KV 103 DISC CAPACITOR 1uf 500v capacitor AC FUSE T4A ceramic capacitor E5
Contextual Info: PRODUCT: CERAMIC DISC CAPACITOR 50V, 100V, 500V, 1KV, 2KV, TEMPERATURE TYPE: COMPENSATING CAPACITOR CUSTOMER: DOC. NO.: D08-00-E-06 Ver.: 6 APPROVED BY CUSTOMER POE INTERNATIONAL CORPORATION 11F, NO. 480, RUEIGUANG RD., NEIHU CHIU TAIPEI, 114 TAIWAN, R.O.C.

MOSFET MARK y2

Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

lg led tv electronic diagram

Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

IN1733A

Abstract: 1N1733A IN1733 1N173A 1N1731A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733
Contextual Info: MIL-S-19500/K2A 13 May 196/« SUPERSEDING MIL-S-19500/142 SigC 20 September I960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N173AA Tliis specification has been approved by the Department of Defense and is man­

cx 20015 a

Abstract: cx 20015 P YP0AC331K060 YU0AC222M series cx 20015 YP0AC101K080 AC06F152M YU0AC102M060 Pan Overseas yv*472M100 ceramic disc capacitor
Contextual Info: POE-D11-00-E-07 CERAMIC DISC CAPACITOR SAFETY RECOGNIZED, AC SERIES PRODUCT: Ver : 7 CERAMIC DISC CAPACITOR SAFETY RECOGNIZED TYPE: AC SERIES CUSTOMER: DOC. NO.: POE-D11-00-E-07 Ver.: 7 APPROVED BY CUSTOMER VENDOR： ： □ WALSIN TECHNOLOGY CORPORATION 566-1, KAO SHI ROAD,YANG-MEI

n6718

Abstract: NPN transistor ECB TO-92 IC350 IC35 H2A transistor
Contextual Info: Spec. No. : C823A3 Issued Date : 2006.10.16 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTN6718A3 Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features

c5706

Abstract: Transistor C5706 c5706 transistor c5706 1a c5706 equivalent transistor c5706 equivalent Transistor C5706 3a BTC5706A3 C5706 3a C5706 I
Contextual Info: CYStech Electronics Corp. Spec. No. : C819A3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation

N0401

Abstract: 0401L MTN0401LA3 marking H2A H2A marking
Contextual Info: CYStech Electronics Corp. Spec. No. : C403A3 Issued Date : 2006.07.14 Revised Date : 2006.08.14 Page No. : 1/6 N-CHANNEL MOSFET MTN0401LA3 Description The MTN0401LA3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching

N7000

Abstract: 1000 volt mosfet to-92 C325A MTN7000A3
Contextual Info: Spec. No. : C325A3 Issued Date : 2004.02.13 Revised Date :2007.10.05 Page No. : 1/5 CYStech Electronics Corp. N-CHANNEL MOSFET MTN7000A3 Description The MTN7000A3 is a N-channel enhancement-mode MOSFET. Symbol Outline MTN7000A3 TO-92 G：Gate S：Source D：Drain

transistor c2383

Abstract: C2383 NPN transistor ECB TO-92 500ma 1A transistor c2383 0 c2383 transistor transistor c316 BTC2383A3 C2383 y C2383 d C2383 NPN Transistor
Contextual Info: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.03.17 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability

N7000

Contextual Info: CYStech Electronics Corp. Spec. No. : C320A3 Issued Date : 2007.11.06 Revised Date : Page No. : 1/7 N-CHANNEL MOSFET MTN7000ZHA3 Description The MTN7000ZHA3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching

D1857

Abstract: TRANSISTOR d1857 BTD1857A3 BTB1236A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2006.03.17 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1857A3 Description • High BVCEO • High current capability • Complementary to BTB1236A3 • Pb-free package

transistor c2030

Abstract: C2030 PT100M NPN transistor ECB TO-92 transistor c316 date for ic component C316 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.04.03 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2030A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability

marking U1M

Abstract: qml-38535 CDFP2-F14 CQCC1-N20 FORM2234 GDFP1-F14
Contextual Info: REVISIONS LTR DESCRIPTION A d d d e v i c e type 02. b oilerplate * - rrp DATE A dd case outl i n e s C a n d 2. Update APPROVED YR-MO-DA R. MONNIN 97-09-03 REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE

D1858

Abstract: d1858 transistor transistor d1858 btd1858a3 NPN transistor ECB TO-92 500ma 1A IC20I THROUGH HOLE 4 PIN TO 220 PACKAGE IC date for ic component
Contextual Info: CYStech Electronics Corp. Spec. No. : C856A3 Issued Date : 2006.06.05 Revised Date : 2006.06.08 Page No. : 1/9 Silicon NPN Epitaxial Planar Transistor BTD1858A3 Description • High BVCEO • High current capability • Pb-free package Symbol Outline BTD1858A3

H2AK012T

Abstract: ftr-h2 Marking H2 VDE 0435 5A 250V relay FTR-H1 marking .H2 EN61810-1 VDE0435 RELAY FUJITSU 10A30VDC
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 10A Relay Type FTR-H2 Series n FEATURES High density mounting Saves space by 26% compared to FTR-H1 type l High insulation Insulation distance: minimum 6mm between coil and contact Dielectric strength: 4KV Surge strength: 10KV

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information