MARKING NC UPAK Search Results

HA17431VP

Abstract: HA17431PA HA17431PNA HA17431V HA17L431 HA17L431LP HA17L431P HA17L431UP HA17L432UP hitachi Zener Diode marking code
Contextual Info: HA17L431 Series High-Precision Variable Shunt Regulators ADE-204-029B Z 3rd Edition Apr. 1999 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be

HA17L431ALP

Abstract: HA17431VP hitachi mpak year code HA17431PA marking code 4e HA17431V HA17L431 HA17L431A Hitachi DSA00163 HA17L431LP
Contextual Info: HA17L431/HA17L431A Series High-Precision Variable Shunt Regulators ADE-204-029C Z 4th Edition Aug. 2000 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) and the HA17L431ALP(MPAK-5) / AP(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in

marking ALP

Abstract: HA17431PA marking code 253 marking code 4e marking code SG transistors zener marking hitachi HA17431V HA17L431 HA17L431A HA17L431ALP
Contextual Info: HA17L431/HA17L431A Series High-Precision Variable Shunt Regulators ADE-204-029D Z Rev.4 Dec. 2000 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) and the HA17L431ALP(MPAK-5) / AP(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in

Hitachi 2SJ

Contextual Info: 2SJ244 - Silicon P Channel MOS FET Application UPAK High speed power switching Low voltage operation 1 Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Contextual Info: 2SK1334 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK

Contextual Info: 2SJ361 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 1. 2. 3. 4. Gate Drain Source

J361 IC

Contextual Info: 2SJ361 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 U ^ ?D G o—h-rwJ

RQJ0304DQDQSTL-E

Abstract: RQJ0304DQDQS
Contextual Info: RQJ0304DQDQS Silicon P Channel MOS FET Power Switching REJ03G1778-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional Power package UPAK Outline RENESAS package code: PLZZ0004CA-A

RQJ0306FQDQS

Abstract: RQJ0306FQDQSTL-E
Contextual Info: RQJ0306FQDQS Silicon P Channel MOS FET Power Switching REJ03G1780-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package UPAK Outline RENESAS package code: PLZZ0004CA-A

RQJ0305EQDQS

Abstract: RQJ0305EQDQSTL-E
Contextual Info: RQJ0305EQDQS Silicon P Channel MOS FET Power Switching REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package UPAK Outline RENESAS package code: PLZZ0004CA-A

RQK1001GQDQS

Abstract: RQK1001GQDQSTL-E RQK-10
Contextual Info: RQK1001GQDQS Silicon N Channel MOS FET Power Switching REJ03G1729-0100 Rev.1.00 Aug 19, 2008 Features • Medium drain to source voltage and Low gate drive VDSS : 100 V and 4 V gate drive • Low drive current • High speed switching • Small traditional package UPAK

2SJ317

Contextual Info: 2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage operation 32 1 Features 4 • Very low on–resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

2SJ244

Contextual Info: 2SJ244 Silicon P Channel MOS FET DIII-L Application UPAK High speed power switching Low voltage operation 3 1 2 Features 4 • Very low on–resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

2SK2315

Contextual Info: 2SK2315 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device - - - can be driven from 3 V source. • Suitable for DC – DC converter, motor drive,

2SK1772

Contextual Info: 2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,

Contextual Info: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain

td 6950

Abstract: 2SJ361
Contextual Info: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain

Contextual Info: HA17L431 Series High-Precision Variable Shunt Regulators HITACHI ADE-204-029A Z 2nd Edition Sept. 1, 1998 Description The HA17L431LP(MPAK-5) / P(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be replaced for

hitachi selection guide

Abstract: Hitachi DSA002744 TO-92 98 ha17431vp
Contextual Info: HA17L431 Series High-Precision Variable Shunt Regulators ADE-204-029A Z 2nd Edition Sept. 1, 1998 Description The HA17L431LP(MPAK-5) / P(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be replaced for

Hitachi DSA002749

Contextual Info: 2SK1334 Silicon N-Channel MOS FET Nov. 1 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK

Hitachi DSA002779

Contextual Info: 2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 3 2 1 4

Hitachi DSA002713

Contextual Info: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain

2SJ317

Abstract: Hitachi 2SJ Hitachi DSA00395
Contextual Info: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK

2SJ186

Abstract: DSA003733 Hitachi 2SJ
Contextual Info: 2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline UPAK 3 2 1 4 D 1. Gate