MARKING P2K Search Results

LM7805 M SMD

Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

LM7805 smd

Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

LM7805 M SMD

Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

LM7805 smd

Abstract: LM7805 smd transistor marking C14
Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency

diode c723

Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Contextual Info: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to

240101S

Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

PTF240101S

Abstract: LM7805
Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

200B

Abstract: BCP56 LM7805 PTFA210451E infineon gold
Contextual Info: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

Contextual Info: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized

ssy 1920

Abstract: LM7805 SSY C5
Contextual Info: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and

LM7805

Abstract: PTFA210301E
Contextual Info: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA

transistor di 960

Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

AT27280

Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
Contextual Info: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and

elna capacitor 22uf

Contextual Info: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the

Contextual Info: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

A2103

Contextual Info: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA

LM7805

Abstract: H-30265-2 lm 2094
Contextual Info: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

Contextual Info: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and

d 417 transistor

Contextual Info: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

A211801E

Abstract: 200B103 LM7805 PTFA211801E
Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

C66065-A2326-C001-01-0027

Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
Contextual Info: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770

Contextual Info: STL70N4LLF5 Automotive-grade N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS RDS on max ID STL70N4LLF5 40 V 6.7 mΩ 18 A • Designed for automotive applications and

100uf HFK

Abstract: HFK CAPACITOR 100 HFK capacitor
Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications