MARKING RO LNA Search Results

bi directional LNA with AGC

Abstract: LFB312G45SG2A509 SiW1721 2.4GHZ synthesizer
Contextual Info: SiW1721 BLUETOOTH RADIO MODEM l ia VCC VDD_IO RESET_N VBB_OUT VCC_OUT VBATT_ANA VBATT_DIG CHG_PUMP VTUNE PLL Control Voltage Regulators and Power Distribution Clock Distribution nt LNA ADC 90 ADC PLL Synthesizer Power Control IDAC GFSK Modem fi Internal

IND0402

Abstract: IND-0402 Res0402 Communications Integrated circuit FC7510 CAP0402
Contextual Info: FC7510 Future Communications Integrated circuit Inc. Direct-conversion wireless LNA for Cellular-/PCS- CDMA, AMPS DESCRIPTION FEATURES FC7510 is primarily designed for a receiver LNA l Dual band operation: Cellular & PCS of FCI’s zipRF family for the dual-band, triplemode system, operating in the advanced mobile

IND-0402

Abstract: IND0402 FC7510 Communications Integrated circuit CAP0402
Contextual Info: FC7530 Future Communications Integrated circuit Inc. Direct-conversion wireless LNA for Cellular-/PCS- CDMA, AMPS and GPS DESCRIPTION FEATURES FC7530 is primarily designed for a receiver l Triple band operation: Cellular & PCS LNA of FCI’s zipRF family for the triple-band

gps lna

Abstract: gps l10 RF GPS L10 - GPS
Contextual Info: FC2109 Future Communications Integrated circuit Inc. Cellular CDMA/GPS LNA/Mixer DESCRIPTION FEATURES The FC2109 is designed primarily for use in a receiver front-end of the dual-band, dual-mode system, operating in the Cellular Code-Division Multiple-Access CDMA , and Global Positioning

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)

SMD MARKING CODE 1am

Abstract: gy 615 smd st smd diode marking code VU diode SMD MARKING CODE 8E smd MARKING 8g marking JE 6 pin 1am smd smd 1AM 1AM DIODE smd diode marking sG
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1996 Apr 26 Philips Semiconductors 1999 May 17 PHILIPS Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B PINNING FEATURES • Total power dissipation:

Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL JUNCTION TYPE 1 1 • m. ■ ■ FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. • • Low Noise Figure : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY62 Silicon controlled switch Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification Silicon controlled switch BRY62 PINNING DESCRIPTION

st 9635

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line 1.8 GHz LNA/Downmixer Designed prim arily for use in DECT, Japan Personal Handy Phone JPHP , and other w ireless Personal Comm unication System s (PCS) applications. The M R FIC 1804 includ es a low no ise a m p lifie r and do w n m ix e r in a low -co st

"MARKING CODE 11"

Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 23 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: ESH3B, ESH3C, ESH3D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss

LT 816

Contextual Info: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS PHILIPS Philips Semiconductors Product specification

MARKING CODE 13t sot363

Abstract: A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens
Contextual Info: SIEMENS BGA425 S i-M M IC -A m p lifier in SIEGET 25-Technology Prelim inary Data # # # # # # # M ultifunctional Case. 50 £2 Block LNA/M IX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2=22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V D= 3 V ,lD=9.5m A)

26ls34

Abstract: H9205 marking code EY SMD SMD MARKING CODE ACQ
Contextual Info: AMD DEFENSE LOGISTICS AGENCY OE F E N S C E L E C T R O N tC S SU PPLY CENTER DAYTON, OH 4 5444-5254 REFTP TO- D E S C -E C S M s. R o o n e y /(A V 986 5 1 3 -2 9 6 -6 0 4 7 /n jj) 2 4 JUN 1992 JUL 0 9 1992 S U B JE C T : N o tice o f R e v isio n (N O R ) 5 9 6 2 - R 2 14-92 fo r S ta n d a rd iz e d

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS u P C 8 1 1 9 T , u P C 8 1 2 0 T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ^¡PC8119T and ^¡PC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to

54LS76

Abstract: SNJ54LS76AJ 30110B SNJ54LS76AFK
Contextual Info: R E V IS IO N S LTR DESCRIPTION DATE A PP R O VED E temove vendor CAGE 18324. Correctior jn vendor CAGE 01295 part notation. Convert to M ilit a r y Drawing format. I d ito ria l changes throughout. Add LCC Dackaqe.Remove vendor CAGE 27014. Add MIL-M-38510/ number fo r L£C

MBRS10H100CT

Abstract: appa appa 17 MBRS10H200CT marking code pj 10h100c
Contextual Info: TAIWAN SEMICONDUCTOR MBRS10H100CT - MBRS10H200CT RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE d 2p a k F e atures 4“ <i•> ❖ <• ❖ ■> 4- <• P ls s lc rrv ile ria l u s s d n a m e s U n d e rw ik '.rs I a b o ra lo ry

cmos book

Contextual Info: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s

TCXO-27

Contextual Info: FC7350 Future Communications Integrated circuit Inc. Direct-conversion wireless Rx IC for Cellular-CDMA/AMPS, GPS DESCRIPTION FEATURES FC7350 is an RF-to-baseband receiver IC, a dual-band triple-mode Cellular/GPS bands, CDMA/AMPS/GPS modes chip of FCI’s zipRF

Contextual Info: FC2202 Future Communications Integrated circuit Inc. Receiver RFIC for PCS / GPS DESCRIPTION FEATURES The FC2202 is designed primarily for use in a l Complete Receiver Front -end of the receiver front -end of the dual-band, dual-mode system, operating in the PCS CDMA, and GPS.

programmable unijunction transistor

Abstract: "Programmable Unijunction Transistor" ph a5 transistor
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor

st smd diode marking code VU

Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage

tx2 1049

Abstract: circuit schematic for ev 100 m mixer 10nF J5
Contextual Info: Future Communications Integrated circuit Inc. FC3103 Receiver RF solution for Cellular CDMA/AMPS DESCRIPTION FEATURES The FC3103 is designed primarily for use in a receiver front-end Module IC of the single-band, dual-mode system, operating in the Advanced