MARKING TN5 Search Results

N3C SOT

Abstract: N-Channel Enhancement-Mode 250v to-92 74W MARKING CODE SOT23 250V 400MA TN5325 TN5325K1 TN5325N3 TN5325N8
Contextual Info: TN5325 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(on) (min) TO-236AB* TO-92 TO-243AA* N3C❋ 250V 7.0Ω 2.0V 1.2A TN5325K1

N-Channel Enhancement-Mode 250v to-92

Abstract: 74w MARKING CODE TN5325 TN5325K1 TN5325N3 TN5325N8 SOT23 250V 400MA
Contextual Info: TN5325 TN5325 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(on) (min) TO-236AB* TO-92 TO-243AA* N5C❋ 250V 7.0Ω 2.0V 1.2A

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001

diode sot-23 marking AG

Abstract: VF01 sot-23 Marking N2
Contextual Info: TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* N1T❋ 300V 25Ω 2.4V TN2130K1 where ❋ = 2-week alpha date code

SSRAM

Abstract: AS5SS256K36
Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) FEATURES             OPTIONS  MARKING Timing 7.5ns/8.5ns/117MHz 8.5ns/10ns/100MHz 10ns/15ns/66MHz -7.5

Contextual Info: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)

SCP1000-D11

Abstract: SCP1000 D01 SCP1000 SCP1000-D01 TN51 2716 eeprom
Contextual Info: Doc.Nr. 8260800.08 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 having updated signal conditioning circuitry. This version can be recognized from the D01 or D11 marking on the top of the

AS5SS256K36

Abstract: 43251 876-3210
Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS MARKING Timing 8.5ns/10ns/100MHz 10ns/15ns/66MHz z Packages 100-pin TQFP (2-chip enable) z Pinout 3-chip Enable

SCP1000-D11

Abstract: SCP1000 D01 SCP1000-D01 MEMS pressure sensor mems ultrasonic sensors micro machined ultrasonic sensors MICRO USA Pressure Sensor SCP1000 smd transistor device marking p18 SMD transistor Marking rw
Contextual Info: Doc.Nr. 8260800.06 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 version which is equipped with the first release of signal conditioning circuitry. It can be recognized from the P01 or P03 marking

Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)

Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56

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Abstract: 12345
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM FEATURES l l l l l l l l l l l OPTIONS MARKING l -8.5 -10 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56

Contextual Info: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76

SCP1000-D11

Abstract: SCP1000 SCP1000-D01 SCP1000 D01 Top Power ASIC TN59
Contextual Info: SCP1000 ASIC update TN59 SCP1000 Series ASIC update 1 Introduction Both pressure sensors, SCP1000-D01 and SCP1000-D11, use the same signal conditioning ASIC Application Specific Integrated Circuit . The difference between these two product types is the serial

MARKING MY

Abstract: fairchild top marking diode marking 226 J05Z TN5320A fairchild amplifier fairchild marking FAIRCHILD TN5320A-J05Z
Contextual Info: Product Folder - Fairchild P/N TN5320A - PNP High Voltage Amplifier Advanced Search Google Search PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD PRODUCTS MARKETS & APPLICATIONS SUPPORT COMPANY INVESTORS MY FAIRCHILD Related Links TN5320A

TN5335

Abstract: TN5335K1 TN5335N8 TN5335NW
Contextual Info: TN5335 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-236AB TO-243AA* Wafer 350V 15Ω 2.0V 750mA TN5335K1 TN5335N8 TN5335NW * Same as SOT-89.

marking N8 sot-23

Abstract: mos fet marking k1
Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

sot 23 x 316

Abstract: transistor N3 SOT N3 marking code sot 89 mos fet marking k1
Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

marking N8 sot-23

Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

sot-89 MARKING CODE ab

Abstract: FET SOT-89 fet sot-89 marking code fet sot-89 product marking TN5335 TN5335K1-G TN5335N8-G FET SOT-89 N-Channel
Contextual Info: TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices

Contextual Info: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)