FAIRCHILD Search Results

Contextual Info: DS3680 QUAD TELEPHONE RELAY DRIVER SLRS014C - MARCH 1986 - REVISED SEPTEMBER 1995 Designed for -52-V Battery Operation D OR N PACKAGE TOP VIEW 50-mA Output Current Capability Input Compatible With TTL and CMOS Direct Replacement for National DS3680 and Fairchild mA3680

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

driver injectors

Abstract: high side gate driver GTO FAN7083
Contextual Info: FAN7083_GF085 High Side Gate Driver with Reset Features Description • Qualified to AEC Q100 The FAN7083_GF085 is a high-side gate drive IC with reset input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under

FDPF4N60NZ

Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

REFLECTIVE OBJECT SENSOR

Contextual Info: REFLECTIVE OBJECT SENSOR REFLECTIVE OBJECT SENSOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

fsdh0165

Abstract: *DH0165 Fairchild SPS switch fairchild
Contextual Info: www.fairchildsemi.com FSDH0165 Fairchild Power Switch SPS Features Description • • • • • • • • • The FSDH0165 is specially designed for an off-line SMPS with minimal external components. The FSDH0165 is a monolithic high voltage power switching regulator that combine the

Contextual Info: REFLECTIVE OBJECT SENSOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

RMPA2450

Abstract: C4 MMIC HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz F245
Contextual Info: RMPA2450 2.4 to 2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Absolute Ratings Electrical Characteristics Note 4, At 25°C, Zo=50 Ohms, Unless Otherwise Noted The Fairchild RF RMPA2450 is a fully matched monolithic power amplifier in a surface

Contextual Info: MULTICOLOR BARGRAPH DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

Contextual Info: SUBMINIATURE T-3/4 RESISTOR LAMPS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

fairchild

Contextual Info: HERMETIC SILICON PHOTODARLINGTON DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

Contextual Info: FSFR-Series / FSFR2100 Fairchild Power Switch FPS for Half-Bridge Resonant Converter Features Description ƒ FSFR-series is a highly integrated power switch family specially designed for high-efficiency half-bridge resonant converters. Offering everything necessary to

KA1H0265

Abstract: KA1H0265R KA1H0265R-TU KA1H0265R-YDTU KA1M0265R KA1M0265R-TU KA1M0265R-YDTU
Contextual Info: www.fairchildsemi.com KA1M0265R/KA1H0265R Fairchild Power Switch FPS Features Description • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of

fairchild optocoupler

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NDS9955

Abstract: SOIC-16
Contextual Info: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: www.fairchildsemi.com KA2S0680B Fairchild Power Switch SPS Features Description • • • • • • • • • The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM Controller IC. PWM controller features integrated fixed oscillator,

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FSDH0165

Contextual Info: www.fairchildsemi.com FSDH0165 Fairchild Power Switch FPS Features Description • • • • • • • • • • The FSDH0165 is specially designed for an off-line SMPS with minimal external components. The FSDH0165 is a monolithic high voltage power switching regulator that combine the

NDS9936

Contextual Info: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is