MATERIAL DENSITY CDA 195 Search Results

BR931

Abstract: motorola mca MCA3200ETL MCA6200ETL MCA750ETL H4C018 Motorola Master Selection Guide H4C161 wirebond die flag lead frame an1512
Contextual Info: Semicustom Application Specific Integrated Circuits In Brief . . . Motorola supports strategic programs and co–development partnerships to accelerate the availability of advanced processes CMOS, BiCMOS, Bipolar , packaging and CAD technology. Extensive research,

Material density CDA 195

Abstract: eutectic 157 CDA 194 olin 7025 Eftec 64t X10-4 resistivity table sn 8400 MF202 silver
Contextual Info: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-9 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Alumina

UPD4564163G5-A10B

Abstract: uPD4564841G5-A10-9JF UPD4564163G5A10L9JF
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.

E014

Abstract: upd4564163g5a10b
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

M12650EJ5V0DS00

Abstract: PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441,45128841,45128163 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 word x bit x bank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

NEC MEMORY

Abstract: p77 cac uPD4564441
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

NEC MEMORY

Abstract: mark t6 UPD4564163G5-A10-9JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.

EDD1204ALTA-1A

Abstract: EDD1204ALTA-75 EDD1204ALTA-7A EDD1208ALTA-1A EDD1208ALTA-75 EDD1208ALTA-7A Material density CDA 195
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT EDD1204ALTA, EDD1208ALTA, EDD1216ALTA 128 M-bit Synchronous DRAM with Double Data Rate 4-bank, SSTL_2 Description The EDD1204ALTA, EDD1208ALTA, EDD1216ALTA are high-speed 134,217,728 bits synchronous dynamic

polyaniline

Abstract: 226 capacitor Material density CDA 195 non electrolytic capacitor esl esr
Contextual Info: CARTS USA 2005 March 21-24, 2005 Palm Springs, CA Strategies for Manufacturing Ultra Low ESR Ta Capacitors Randy Hahn and Kim Pritchard KEMET Electronics Corp PO Box 5928 Greenville, SC 29606 Tel: +1 864-963-6300 Fax: +1 864-228-4333 randyhahn@kemet.com past. These trends coupled with the need to

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

stl 950 polybutylene

Abstract: MS3348 dps 298 cp 2 1650402-1 1-1600960-8 Bus Bar torque for metric copper bolts 6648236-1 5MM PITCH PIN STRIP HEADER RIGHT ANGLE 66084-1 6648223-1 SWAGE
Contextual Info: Power Connectors & Interconnection Systems MULTI-BEAM XL Power Distribution Connector System Board Mount Connectors Product Facts Single-piece molded housings • Custom configurable modular design ■ AC and DC power in the same connector — Meets UL safety requirements

LSC series Microcontroller by MOTOROLA

Contextual Info: ICs for Communications Siemens Codec with UPNTransceiver SCOUT-P PSB 21391 Version 1.3 Siemens Codec with UPNTransceiver SCOUT-PX PSB 21393 Preliminary Data Sheet 09.99 DS 1 PSB 21391 PSB 21393 Revision History: Current Version: 09.99 Previous Version: Prel. Data Sheet 10.98

mt 10p10

Abstract: ITT Cannon 5420 mt 1336 e
Contextual Info: ca_D1-D102:Layout 1 2/10/11 11:51 AM Page 1 ca_D1-D102:Layout 1 2/10/11 11:51 AM Page 2 Cannon Microminiature Products system, developed by ITT in the early 1960’s. A separate section describes in detail the twist pin electrical contact technology refer to page D-6 .

mt 10p10

Abstract: A106 Micro Capacitor 031-9540-000 MT A 10P10 2DA31P 2DC79P 2DA31S 2DC79S 995-0001-338 Hysol EE4198
Contextual Info: Electronic Components Cannon Microminiature Connectors Customer Support Locations ASIA Tuopandun Industrial Area, Jinda Cheng, Xiner Village, Shajing Town, Baoan District, Shenzhen City, Guangdong, China 518125 Phone: 86 755 2726 7238 Fax: (86) 755 2726 7515

VIC 2A 94v-0

Abstract: Duracell dr17 sn 76545 panasonic MS614 self tapping screws DIN 7981 hole size smps 12 volt 3 amp simel HIGH VOLTAGE CONNECTORS DC-JACK Power Connectors ml616 1648416-1
Contextual Info: 55249CVR 8/5/05 8:49 PM Page 1 AMP & ELCON Power Connectors & Interconnection Systems Power Connectors & Interconnection Systems Table of Contents Table of Contents …………………………………………………………………………… 2, 3

PCB design for very fine pitch csp package

Abstract: Senju 179GHH 37K-1 B12-246 Modified Coffin-Manson Equation Calculations Senju metal solder paste 160 e7 Semicon volume 1 SSYZ015A
Contextual Info: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015A Second Edition – September 1999 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

smd transistor mark E13

Abstract: Modified Coffin-Manson Equation Calculations senju solder paste m10 f12 A10D10 P6K6 BGA reflow guide Senju metal flux T5 k5m6 K793 T4V4
Contextual Info: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015B Third Edition – September 2000 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

KL SN 102 94v0

Abstract: ASTM d4066 ms3367 RBS 6601 Installation guide for RBS 6000 SHK 55-65 Scanbe ejector kit rbs 6501 cr40 steel 11633-1 SCANBE KL SN 102 94v
Contextual Info: RI-55006 cat cover for pdf 8/5/02 9:48 AM Page 2 2002 NEW PRODUCTS DISTRIBUTOR LOCATIONS WORLDWIDE RICHCO USA Please call Customer Service 773 539-4060, Samples (800) 621-1892, or visit www.richcoinc.com for your nearest distributor location. EUROPE Alldistri Handelsges. m.b.H.