MD2219F Search Results

Contextual Info: MD2219F Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MD218

Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
Contextual Info: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap­

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

MQ-2

Contextual Info: MOTOROLA SC XSTRS/R F -f-WX} 15E D I b3b7554 DGfibSEB 7 | M A X I M U M R A T IN G S Rating Symbol MD2218,A MD2219A.F MQ2218/A MD2218AF MQ2219,A MD2219AF Unit Collector-Emitter Voltage v CEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

MD8003

Abstract: 2n3817 MD918A MD7003A MD8002 MD2219 MD2219A MD2219AF MD2219F MD2369
Contextual Info: D U A L T R A N S IS T O R S r ’S oo CL < < c 5 QC Subscript »0 PD Watts One Oie Only •c Amp Max. hFE 0.05 0.05 0.05 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.20 0.20 0.20 0.5 0.5 0.03 0.05 0.05 0.03 0.03 0.03 0.5 0.5 0.5 0.5 0.03 0.03 0.03 0.03 0.03

Contextual Info: \Pioau.ctit Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS MD221BAF MD2219AF MO2218.A MD2218AF Symbol MQ2219.A MD2219AF Rating Unit Collector-Emitter Voltage VCEO 30 40 Vdc

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

72s4

Abstract: MD2218 MD2218AF MD2218F MD2219 MD2219AF MD2219F MQ2218 MQ2219
Contextual Info: MOTOROLA SC 6367254 -CXSTRS/R Tb F> MO TO RO L A SC XSTRS/R D E ^ ti3Li7E!54 82435 96D F M D 2 2 1 8A F M D2219AF M 02218, A MD2218AF Symbol M 02219,A MD2219AF VCEO 30 40 Collector-Base Voltage VcBO 60 75 Vdc Emitter-Base Voltage V EBO 5.0 6.0 Vdc 500 *C