MD2369 NPN Search Results

MD2369

Contextual Info: MD2369 NPN Silicon Dual General Purpose Transistor. 7.98 Transistors Multiple Transi. Page 1 of 1 Enter Your Part # Home Part Number: MD2369 Online Store MD2369 Diodes NPN Silicon Dual General Purpose Transistor. Transistors Integrated Circuits Optoelectronics

MD6100

Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
Contextual Info: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

82441

Abstract: MD2369 MD2369AB
Contextual Info: MOTOROLA SC - CXS TRS/ R 6367254 FJ- Tb MOTOROLA SC <XSTRS/R DE| f a 3 f c . 7 2 5 M ODfl aH4D 96D 8 2 4 4 0 D _ T - Z 7 - ^ 7 F M A X IM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage

md2369

Abstract: MD2369A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | b3fc.7254 GGÜbSeö b | M AXIM UM RATIN GS Symbol Value Unit Collector-Emitter Voltage Rating VcEO 15 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage vebo 5.0 Vdc ic 500 mAdc Collector Current — Continuous One Die

MD2369

Abstract: md2905 82440 MD2369A MD2369AF MD2369B MD2369BF MD2369F MD2904 MQ2369
Contextual Info: NO T O R O L A SC -CXSTRS/R 6367254 FJ ^ MOTOROLA SC CXSTRS/R D E | b 3h7a S 4 96 D F ODfl aH4 D 82440 D T - Z 7-^-7 MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 15 Vdc - Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 5.0 Vdc

MD2369

Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369
Contextual Info: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com­

md2369

Contextual Info: MOTOROLA SC XSTRS/R 1SE F D § b3b72S4 G0flbS71 7 | -p M 3 ~ 2 .5 ' MHQ2369 MPQ2369 MHQ2369 f C A S E 632-08, STYLE 1 '] TO-116 M A X I M U M R A T IN G S Symbol Value U nit Collector-Emitter Voltage V cEO 15 Vdc Collector-Base Voltage V cB O 40 Vdc Emitter-Base Voltage

MD8003

Abstract: MD-113 MD7005 2N4854 MD6100
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c (mA) v CBO v CEO 00 (V) «C (mA) :E ®Vc6 (V) h MATCHING VCE(SAT )® >C (mA) 00 (MHz) h FE VBE MAX 0.5 % <mV) 150 *TYP MIN 200 60 MIN 50 MiN 35 MAX PNP AMPUSWITCH MAX 600 mm MD982 — 10 10

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

MD8003

Abstract: MD7005
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2n3810 datasheet

Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

Dual Transistors TO-78

Abstract: MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE MAX MIN MIN MIN MAX @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MIN % (mV) 0.5 150 200 - - 10 0.4 150 200 - - 1 0.25 10 500 - -

MD918

Abstract: MD8002 MD2369 MD5179 MD6002 MD6100 MD2219A MD2369A MD2369B MD2905A
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % MD982 PNP AMPL/SWITCH 600 60 50 35 - 10 MAX 10 0.5 150 200

Contextual Info: MPQ2369* M AXIM UM RATINGS Rating CASE 646-06, STYLE 1 TO-116 Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CEO 15 Vdc C o lle c to r-B a s e V o lta g e v CBO 40 V dc E m itte r-B a s e V o lta g e Ve b o 4.5 V dc 'c 500 m Adc C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: MPQ2369* MAXIMUM RATINGS Rating CASE 646-06, STYLE 1 TO-116 Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO 15 Vdc C o lle c to r-B a se V o lta g e VCBO 40 V dc E m itte r-B a se V o lta g e v EBO 4.5 Vdc tc 500 m Adc C o lle c to r C urre n t — C o n tin u o u s

UPA39A

Abstract: FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302
Contextual Info: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ie Max fT Po Max (A) (Hz) (W) 600m 600m 600m 200M 200M 200M 6.0M 200M 200M 200M 200M 200M 200M 80M 625m 400m 400m 500m 350m 500m 350m 800m 500m 625m 400m 400m 1.5 1.5 1.5 1.5

2N2453A

Contextual Info: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0

md918

Abstract: M559-01 md918 Transistor MD708B MD918A M559-02 MD708 M0708B MD708AF MD708F
Contextual Info: MOTOROLA SC - C X S TR S /R F> T b 6367254 MOTOROLA XSTRS/R SC DE^b3b?254 0002414 96D 8 2 4 1 4 F 4 D'T A 3 ~ ¿ b M A X IM U M RATINGS Symbol Value Unit VCEO 50 Vdc Collector-Base Voltage VCB 75 Vdc Emitter-Base Voltage veb 6.0 Vdc Rating Collector-Emitter Voltage

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

md918 Transistor

Abstract: germanium MM2264 2N3050 MC369G
Contextual Info: TH E SEM ICO N D U CTO R DATA BOOK SUPPLEMENT 1 This is the first supplement to the 2nd Edition of the Semiconductor Data Book originally publishedin August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers intro­

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and