MD2905A Search Results

MMCM2907AHXV

Contextual Info: MOTOROLA SC XSTRS/R F 4bE » b3b?254 OOREfifib ? • FIOTb ~T^2.7-0 f MOTOROLA SEMICONDUCTOR) TECHNICAL DATA DM0 MD2905AFHXV/HS (DUAL) MMCM2907AHXV/HS (SINGLE) Surface Mountable Small-Signal Transistors m in i Discrete Military Operation 60 Volt, 200 Milliampere Bipolar PNP

MD2905

Abstract: MD2905A MD2904 0290B MD290S MD2905AF MO2905 MD2904A Mo29 MD2905F
Contextual Info: MD2904, MD2904A SILICON MD2904F, MD2904AF MD2905, MD2905A MD2905F, MD2905AF MQ2904,MQ2905A M U LT IP LE SILIC O N A N N U LA R TR A N S IS TO R S PNP SILICO N M U LT IP LE TR A N S IS TO R S . . . designed for use as differential amplifiers, dual general-purpose

MD6100

Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
Contextual Info: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

BC140 equivalent

Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M D2905AF DM0 Discrete Military Products PIMP S ilic o n D u a l S m a ll-S ig n a l T ra n sisto r ) Suffixes: HX, H X V /////// Processed per MIL-S-19500/290 . designed for general-purpose switching and amplifier applications

MD8003

Abstract: MD-113 MD7005 2N4854 MD6100
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c (mA) v CBO v CEO 00 (V) «C (mA) :E ®Vc6 (V) h MATCHING VCE(SAT )® >C (mA) 00 (MHz) h FE VBE MAX 0.5 % <mV) 150 *TYP MIN 200 60 MIN 50 MiN 35 MAX PNP AMPUSWITCH MAX 600 mm MD982 — 10 10

UPA39A

Abstract: FET package TO-71 UPA38A 2N4043 2N4042 BC337 2N282 2SC1265 SOLITRON mp302
Contextual Info: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ie Max fT Po Max (A) (Hz) (W) 600m 600m 600m 200M 200M 200M 6.0M 200M 200M 200M 200M 200M 200M 80M 625m 400m 400m 500m 350m 500m 350m 800m 500m 625m 400m 400m 1.5 1.5 1.5 1.5

Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150

md5000a

Abstract: BFX36 MD5000 MFQ930 P/C MFQ6660 P/C BFX11 IRFE110 IRFE111 IRFE113 IRFE9120
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued QUAD TMOS FETS rds (ON) Devices (£2) Max VGS (H7) @ ID (A) Min V(BR)DSS IDSS (V) @ VDS Max (V) ID (m A) @ VDS (V) (UA) Max (V) Min @ ID (VA) CISS IGSS (nA) Max @ VGS (V) CRSS ton toff (pf) Max @ VDS (V) (P0 Max

Dual Transistors TO-78

Abstract: MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE MAX MIN MIN MIN MAX @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MIN % (mV) 0.5 150 200 - - 10 0.4 150 200 - - 1 0.25 10 500 - -

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B