MEDIUM POWER BIPOLAR TRANSISTORS Search Results

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

Medium Power Bipolar Transistors

Abstract: 2N5320 2N5322
Contextual Info: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

Contextual Info: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 

Contextual Info: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •

BCP55-16, BCX55-16

Abstract: bcp55 to PXTA14 PBSS4350Z/3 BCP53-16, BCX53-16 BSP19 PBHV9040Z PBSS305PD PBSS305PX PBSS306PX
Contextual Info: Medium power bipolar transistors Maximum flexibility with NXP’s transistor portfolio Our extensive portfolio of small-signal bipolar transistors covers a wide range of functionalities - from Darlington and switching devices right up to the latest developments

ST AN2349 PFC

Abstract: N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode
Contextual Info: AN2349 Application note Simple cost-effective PFC using Bipolar Transistors for low-to-medium power HF Ballasts Introduction This note deals with the implementation of a Power Factor Correction PFC in a Discontinuous-mode Boost Converter where a PFC stage is achieved with a power bipolar

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1678GV 5 V-BIAS SILICON MMIC AMPLIFIER 2.0 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION /¿PC1678GV is a silicon monolithic integrated circuit designed as medium output power amplifier for various ultra

bc557

Abstract: BDX472 BDX452
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics

bipolar junction transistor

Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
Contextual Info: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product

LA402

Abstract: UC1678
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1678GV 5 V-BIAS SILICON MMIC AMPLIFIER 2.0 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER D ES C R IP TIO N //PC1678GV is a silicon monolithic integrated circuit designed as medium output power amplifier for various ultra

PC2709T

Abstract: NEC 2710
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2776T 5 V -BIAS SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION µPC2776T is a silicon monolithic integrated circuit designed as wideband, medium output amplifier. This IC

NE46134-T1

Contextual Info: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high

Contextual Info: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating

2N4403

Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N4403 product family TO-92 Plastic-Encapsulate Biploar Transistors

30VDC

Abstract: 2N3904
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N3904 product family TO-92 Plastic-Encapsulate Biploar Transistors

pn2222a smd

Abstract: PN2222A npn 60V 600mw
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number PN2222A product family TO-92 Plastic-Encapsulate Biploar Transistors

2N3906 SMD

Abstract: smd 2N3906 2N3906
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N3906 product family TO-92 Plastic-Encapsulate Biploar Transistors

MPS2907A

Abstract: PN2907A
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number PN2907A product family TO-92 Plastic-Encapsulate Biploar Transistors

BPT0338

Contextual Info: BIPOLARICS, INC. Part Number BPT0338 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEE FEATURES: • DESCRIPTION AND APPLICATIONS: Command Base • Bipolarics' BPT0338 is high performance silicon bipolar transistors intended for medium and high power applications.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION ¿¡PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.

Contextual Info: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS

MARKING 93 SOT89

Abstract: marking 93 sot-89 marking 93, sot-89 transistor marking 551 sot-89 marking 3A sot-89 marking codes transistors a1 sot-89 MARKING 5A SOT-89 SOT-89 Marking 93 2STN1550 P025H
Contextual Info: 2STF1550 2STN1550 Low voltage fast-switching NPN power bipolar transistors Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power

Contextual Info: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS