BC636 Search Results

BC635

Abstract: BC636 BC636-AP
Contextual Info: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY

bc736

Abstract: BC635 BC637 BC639
Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

Contextual Info: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

BC838

Abstract: BC640 bc636 npn transistor BC63 transistor BC639 BC635 BC636 BC637 BC638 BC639
Contextual Info: B C 6 3 5 THRU’ B C 6 4 0 ÏA COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors ‘ TO-92 for AF driver stages and amplifier applications up to 1A. ABSOLUTE MAXIMUM RATINGS

BC636

Abstract: BC638 BC640
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage

24825

Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage atR eE=1Kohm C ollecto r E m itter Voltage C ollecto r E m itter Voltage

c640 pnp

Abstract: c 64016 C 63816 c638 Philips 64016
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A

bc638

Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.

bc 148 npn transistor

Abstract: NPN transistor bc 148 bc639 BC 148 transistor BC637
Contextual Info: BC635; BC637; BC639 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 package. PNP com plem ents are BC636, BC638 and BC640. QUICK REFERENCE D A T A BC635 BC637 BC639 100 Collector-base voltage open em itter v CBO max. 45 60 Collector-emitter voltage (open base)

transistor BC636

Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Contextual Info: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

c63610

Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
Contextual Info: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

bc640

Abstract: bc636 bc638
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60

Contextual Info: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.

BC640

Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
Contextual Info: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage

7Z104

Abstract: BC635 BC636 BC636-10 BC637 BC638 BC638-10 BC639 BC640 BC640-10
Contextual Info: BC636; BC638; BC640 PHILIPS INTERNA T IO NA L SbE » 711D Ö2L 0042QSÖ 013 BI P H I N SILICON PLANAR EPITAXIAL TRANSISTORS T - 2 ^ - 2 P'N P transistors in a plastic TO-92 envelope, prim arily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

Contextual Info: MCC TM Micro Commercial Components BC636-10 BC636-16 BC638 BC640
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Through Hole Package Capable of 830mWatts of Power Dissipation

BC640

Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Contextual Info: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636

BC635 ECB

Abstract: BC638
Contextual Info: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

BC636

Abstract: Usha
Contextual Info: Transistors BC636 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 250C) C haracteristic Sym bol Rating Unit V cE R -4 5 V Collector Emitter Voltage VcES -4 5 V Collector Emitter Voltage VcEO -4 5 V V ebo -5 -1 V A A mA W

Contextual Info: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter

639 TRANSISTOR PNP

Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage