MEGAMOS 13 Search Results

42N15

Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

megamos

Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4

a 1712 mosfet

Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Contextual Info: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous

Contextual Info: □ IXYS IXTH 13N110 MegaMOS FET Vd s s D25 D DS on = 1100 V* = 13 A = 0.92 Q N-Channel Enhancement Mode éi Maximum Ratings Symbol TestC onditions V DSS Td = 25°C to 150°C 1100 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1100 V V GS Continuous ±20 V

Contextual Info: nixYS MegaMOS FET IXTH/IXTM 13N80 VDSS = 800 V U =13 A ^D S on = O ' * * ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V * DSS Tj =25°Cto150°C 800 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 800 V VGS v GSM Continuous ±20 V Transient

IRFP 260 M

Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH

Contextual Info: IXTH14N100 MegaMOS FET V DSS =1000 V ID25 = 14 A RDS on = 0.82 Q N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 1000 V v D0H Tj = 25° C to 150° C; RGS= 1 Mft 1000 V VGS v GSM Continuous ±20 V Transient 130 V ^025 Tc =25°C

1XTH5N100

Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10

BSC 031 N 06 NS 3

Abstract: 21N50 ixth21n50 IXTM21N50
Contextual Info: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450

Contextual Info: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C

11n80

Contextual Info: p V DSS IXTH/IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOS FET ^D25 DS on 11 A 0.95 Î2 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V 'o s s Tj = 25°C to 150°C 800 V V«, Tj = 25°C to 150°C ; Ras = 1 M£i 800 V VGS

21N100

Abstract: 21N10 ixtw DIXYS IXTN21N100
Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ

21n50

Abstract: 24n50
Contextual Info: nixYS MegaMOS FET IXTH/IXTM 21N50 IXTH/IXTM 24N50 p VDSS ^D25 500 V 500 V 21 A 24 A DS on 0.25 Q 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V„ss Tj =25°C to150°C 500 V vDQR ^ 500 V Vos VGSM Continuous ±20 V Transient ±30

C246

Abstract: IXTK33N50 C-246
Contextual Info: g ix Y s High Current MegaMOS FET IXTK33N50 V DSS D cont p DS(on) = 500 V = 33 A = 0.17 £2 N-Channel Enhancement Mode Preliminary data Symbol Test conditions vDSS Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS= 1.0 Vos v QSM Maximum ratings M £i Continuous

17N55

Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Contextual Info: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)

40n50

Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
Contextual Info: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75

ixtn15n100

Contextual Info: MegaMOS FET IXTN15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient

Contextual Info: 1IXYS I MegaMOS FET IRFP470 V DSS D cont N-Channel Enhancement Mode p DS(on) Symbol Test Conditions Maximum Ratings V DSS ^ = 25 °C to 150°C 500 V v DGR ^ = 25 °C to 150°C; RQS = 1 M il 500 V V GS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25 °C

ixys ixtn 36n50

Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
Contextual Info: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM

35N30

Abstract: rm 1117 ixtm35n30
Contextual Info: p VDSS MegaMOS FET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions v MS Tj = 25°G to 150“ C 300 V V«, Tj = 25°C to 150°C; RGS = 1 M£i 300 V V cs Continuous ±20 V VGSM Transient ±30 V ^□25 Tc = 25CC 35

75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Contextual Info: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)

diode T88

Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Contextual Info: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30