MG300Q1 Search Results

300Q1US41

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

MG300Q1US51

Abstract: MG300Q1
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)

MG300Q1US41

Contextual Info: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)

Contextual Info: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage

mg30

Abstract: MG300Q1US51 P channel 600v 300a IGBT
Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

Contextual Info: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.

MG25M1BK1

Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
Contextual Info: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400

Contextual Info: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG300Q1US11

Abstract: GE-540 GE-54 221D
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)

MG300Q1US41

Abstract: S60C
Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US 4 1 HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : V c E (sa t) = 4.0V

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = O . o / ' S (Max.) Low Saturation Voltage : V Q E(sat) = 4.0V

Contextual Info: MG300Q1US41 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. M O TO R C O NTRO L A PPLIC A TIO N S. • High I n p u l Impedance • High Speed : tf= 0 .5 //s M a x . • Low S a tu r a tio n Voltage : V £ E ( s a t) = 4 . 0 V t rr = 0.5//s(Max.) (Max.)

mg300* toshiba

Abstract: MG300Q1US51
Contextual Info: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 il <; a. 1 M r • ■ HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s (Max.) • Low Saturation Voltage : V ç E (ç a t) = 4.0V

MG300Q1US51

Abstract: 80c400
Contextual Info: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

MG300Q1UK1

Abstract: MG300Q1UK1 equivalent
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300Q1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. TENTATIVE DATA FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain : hp£=100 Min. (Ic=300A)

MG300Q1US1

Abstract: IGBT MG300Q1US1 mg300q1us
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG300Q1US1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance ■ High Speed: tf=0. 5jJs Max. trr=0.5ys(Max.) • Low Saturation Voltage: Vc]?(sat)=4 .0V(Max. ) • Enhancement-Mode • The Electrodes are Isolated from Case.

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MG300Q1UK1 TENTATIVE DATA Unit in mm 12 ¿0.5 FEATURES: 20±0.5 . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain : hpg=100 Min. (Ic=300A)

Contextual Info: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V

Contextual Info: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0.3/*s Max. @Induetive Load • Low Saturation Voltage . T

Contextual Info: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39