MG50Q6ES Search Results

Contextual Info: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M C>;noRF<;in HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

DC MOTOR CONTROL IGBT

Abstract: ES50A
Contextual Info: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

MG50Q6ES40

Abstract: g50q6es40
Contextual Info: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: TOSHIBA MG50Q6ES51 MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

ksh 200 TRANSISTOR equivalent

Abstract: MG50Q6ES51 G50Q6ES51
Contextual Info: TOSHIBA MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: TO SHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

MG50Q6ES50

Abstract: P channel 600v 50a IGBT vqe 71
Contextual Info: TOSHIBA MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

ksh 200 TRANSISTOR equivalent

Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
Contextual Info: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 5 0 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O S H IB A MG50Q6ES40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES40 H IGH P O W E R SW IT C H IN G APPLIC ATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. • T h e E lectro d e s are Iso lated from C ase. • 6 IG B T s a re B u ilt Into 1 P ack ag e.

Contextual Info: TOSHIBA T EN TATIV E MG50Q6ES50A T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES50A H IGH P O W E R SW IT C H IN G A P PL IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • • High Input Impedance High Speed : tf= 0 .3 ,k s Max.

Contextual Info: T O SH IB A MG50Q6ES51A TOSHIBA GTR MODULE •WB ^M i MF «F SILICON N CHANNEL IGBT ta MF MF ■ » ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

Contextual Info: T O SH IB A MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE m . a ^ ^r n n ^ HIGH POWER SWITCHING APPLICATIONS SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage

MG50Q6ES50A

Abstract: vqe 71
Contextual Info: TOSHIBA MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50

MG200J2YS50

Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,