MGA881 Search Results
MGA881 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, |
Original |
PMEG2005CT O-236AB) AEC-Q101 771-PMEG2005CT215 PMEG2005CT | |
BAS716Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs |
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M3D319 BAS716 OD523 SC-79) BAS716 R76/01/pp8 771-BAS716-T/R | |
DIODE BAT86 replacement
Abstract: bat86
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BAT86 DO-34) DIODE BAT86 replacement bat86 | |
PMLL4148
Abstract: PMLL4148L PMLL4448
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PMLL4148L; PMLL4448 OD80C PMLL4148L OD80C PMLL4148L PMLL4448 PMLL4148 | |
PMEG4005CTContextual Info: PMEG4005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 01 — 5 June 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, |
Original |
PMEG4005CT O-236AB) AEC-Q101 PMEG4005CT | |
PMBD6050Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed diode PMBD6050 PINNING FEATURES • Small plastic SMD package |
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M3D088 PMBD6050 PMBD6050 SCA76 R76/04/pp10 | |
SOT23 DIODE marking CODE AVContextual Info: PMEG3005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 20 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, |
Original |
PMEG3005CT O-236AB) AEC-Q101 SOT23 DIODE marking CODE AV | |
BAT74
Abstract: BAT74L41
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BAT74 OT143B BAT74 BAT74L41 | |
MSA435
Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
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PMLL4148L; PMLL4448 OD80C PMLL4148L OD80C MSA435 PMLL4148 PMLL4148L PMLL4448 MSA461 | |
bas16Contextual Info: BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview |
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BAS16 BAS16 O-236AB BAS16H OD123F BAS16J OD323F SC-90 BAS16L OD882 | |
1N4148.1N4448
Abstract: 1N4148 1N4448 MAM246
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M3D176 1N4148; 1N4448 DO-35) 1N4148 1N4448 MAM246 1N4148.1N4448 MAM246 | |
BAV99 SERIES
Abstract: BAV99 NXP MARKING bav99 nxp Diode bav99 nxp BAV99 NXP SMD MARKING CODE BAV99 BAV993 BAV99S-SOT363 NXP BAV99W reflow temperature Diode bav99
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BAV99 BAV99 O-236AB BAV99S OT363 SC-88 BAV99W OT323 SC-70 AEC-Q101 BAV99 SERIES BAV99 NXP MARKING bav99 nxp Diode bav99 nxp NXP SMD MARKING CODE BAV99 BAV993 BAV99S-SOT363 NXP BAV99W reflow temperature Diode bav99 | |
PMEG3020CPAContextual Info: PMEG3020CPA 2 A low VF dual MEGA Schottky barrier rectifier Rev. 1 — 24 August 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, |
Original |
PMEG3020CPA OT1061 AEC-Q101 PMEG3020CPA | |
BAS28 nxp
Abstract: BAS28 diode Marking code v3
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Original |
BAS28 OT143B AEC-Q101 BAS28 nxp BAS28 diode Marking code v3 | |
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BA220
Abstract: MAM246
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M3D176 BA220 DO-35) BA220 MAM246 | |
BAS29
Abstract: BAS31 BAS35 l21 smd code
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M3D088 BAS29; BAS31; BAS35 BAS29 BAS31 BAS29 BAS31 BAS35 l21 smd code | |
BAX14
Abstract: MAM246 GENERAL PURPOSE DIODE
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M3D176 BAX14 DO-35) BAX14 MAM246 MAM246 GENERAL PURPOSE DIODE | |
A6P SMD
Abstract: smd diode a6P A6p DIODE marking a6p smd A6p A6p smd bas16 MSA562 BAS16 diode a6p marking code A6p
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M3D088 BAS16 BAS16 A6P SMD smd diode a6P A6p DIODE marking a6p smd A6p A6p smd bas16 MSA562 diode a6p marking code A6p | |
BAV23A/DG
Abstract: BAV23 BAV23A BAV23C BAV23S SOT23 NXP power dissipation TO-236AB
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BAV23 BAV23A O-236AB BAV23C BAV23S BAV23 OT143B BAV23A/DG BAV23A BAV23C BAV23S SOT23 NXP power dissipation TO-236AB | |
1N914
Abstract: MAM246
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M3D176 1N914 DO-35) 1N914 MAM246 115002/03/pp8 MAM246 | |
smd code A1t
Abstract: A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode DIODE smd marking a1t 22 a1t diode DIODE smd marking A1p A1t SOT23 DIODE smd marking A1t
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M3D088 BAW56 BAW56 115002/00/03/pp12 smd code A1t A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode DIODE smd marking a1t 22 a1t diode DIODE smd marking A1p A1t SOT23 DIODE smd marking A1t | |
BAS716Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs |
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M3D319 BAS716 MAM408 R76/01/pp8 BAS716 | |
SMD MARKING code t5c
Abstract: smd t5c transistor t5c code t5c sot23 smd p5c smd code marking WV PMBD7000 SMD MARKING code p5c
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M3D088 PMBD7000 PMBD7000 115002/00/03/pp9 SMD MARKING code t5c smd t5c transistor t5c code t5c sot23 smd p5c smd code marking WV SMD MARKING code p5c | |
PMLL4150
Abstract: PMLL4151 PMLL4153
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M3D054 PMLL4150; PMLL4151; PMLL4153 PMLL4150, PMLL4151, PMLL4153 PMLL4150 PMLL4151 |