MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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MGF4918D
Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F
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GD-16
GD-15
GD-18
MGF4314D
MGF4316D
MGF4317D
MGF4318D
MGF4314E12
MGF4918D
MGF4919F
MGF4919
MGF4319F
MGF-4317D
MGF4914D
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MGF4313
Abstract: MGF4919
Text: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E
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M6f4314£
MGF4313E
MQF43t9iE
MOF441
MGF44I7D
MGF4714AP
NH3F4814E
MGF4918E
MGF4919E
MGF4313
MGF4919
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MGF4714AP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,
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MGF4714AP
MGF4714AP
12GHz
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InGaAs HEMT mitsubishi
Abstract: MGF4714
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | DESCRIPTION The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili ty Transistor is designed fo r use in X band am plifiers. The plastic m old package offer high cost perform ance,
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MGF4714AP
MGF4714AP
InGaAs HEMT mitsubishi
MGF4714
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MGF4714AP
Abstract: FET 748 low noise x band hemt transistor 251C
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> o q iv ö ö ? h&& MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCR IPTIO N The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili ty Transistor is designed fo r use in X band am plifiers. Th e plastic m old' package o ffer high cost perform ance,
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OCR Scan
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MGF4714AP
MGF4714AP
GF4714AP
FET 748
low noise x band hemt transistor
251C
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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