MGFC36V7177A Search Results

IM335

Contextual Info: MITSUBISHI SEMICONDUCTOR \GaAs FET/ MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V7177A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 7.1 ~ 7.7G H z

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7177A -Shto 1,0 „ata«'«” S O IT .« ti a r ‘ . v.rni» are 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches)

Contextual Info: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC36V7177A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

dssc

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET> MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically

MGFC36V7177A

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7177 A « 8fnel f 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 7.1~7.7GHz

MGFC36V7177A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7177A . 0 ^ „ o t > c • •• a;C W« 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~7.7GHz

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m