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    MH1099 Search Results

    MH1099 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MH1099 Atmel ASIC: 1.6 Million Gates Sea Of Gates/Embedded Arrays Original PDF
    MH1099-BGA121 Atmel 1.6 Million gates Sea of Gate / Embedded Array Original PDF
    MH1099E Atmel Rad Hard 1.6M Used Gates 0.35 um CMOS Sea of Gates/Embedded Array Original PDF
    MH1099ER Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1099ES Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1099R Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF
    MH1099S Atmel 1.6M Used Gates 0.35 CMOS Sea of Gates / Embedded Arrays Original PDF

    MH1099 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATMEL 634

    Abstract: ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TPRAM; Gate Level or Embedded


    Original     		PDF 5962-01B01 4138F ATMEL 634 ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA

    AOI222

    Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
    Text: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


    Original     		PDF 5962-01B01 4138E AOI222 AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter

    tristate buffer

    Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
    Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to


    Original     		PDF 4110F tristate buffer smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E

    DIGITAL IC TESTER report for project

    Abstract: atmel 504 IO33 ATC18RHA 4261C virage IO33
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments


    Original     		PDF ATC18RHA 655Mbps) 4261C DIGITAL IC TESTER report for project atmel 504 IO33 ATC18RHA virage IO33

    ta 8268

    Abstract: qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to


    Original     		PDF F7400 ta 8268 qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1

    MH1099

    Abstract: MH1242 PO11V5 4138G
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


    Original     		PDF 5962-01B01 4138G MH1099 MH1242 PO11V5

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		PDF 20nts 4110H A101 A201 MH1099E MH1156E MH1242E MH1332E AMI 1108

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
    Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		PDF 4110I A101 A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard

    DIGITAL IC TESTER report for project

    Abstract: ATMEL 644 IO33 4261F ATC18RHA Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b
    Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments


    Original     		PDF ATC18RHA 655Mbps) 4261F DIGITAL IC TESTER report for project ATMEL 644 IO33 Genesys Logic MQFP-F196 5962-06B02 atmel 216 4261b

    DIGITAL IC TESTER report for project

    Abstract: MCGA349 PL33RXZ atmel 504 ATMEL 644 ATC18RHA 5962-06B02 MQFP-T352 IO33 mcga
    Text: Features • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells ATC18RHA Core pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V and 2.5 +/- 0.25V Environments


    Original     		PDF ATC18RHA 655Mbps) 4261E DIGITAL IC TESTER report for project MCGA349 PL33RXZ atmel 504 ATMEL 644 5962-06B02 MQFP-T352 IO33 mcga

    ATMEL 634

    Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
    Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		PDF 4110G ATMEL 634 ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E

    PO88

    Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
    Text: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


    Original     		PDF 250MHz 220MHz 800MHz 5962-01B01 PO88 ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		PDF 4110Lâ

    TEMIC PLD

    Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
    Text: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The


    Original     		PDF

    ATMEL 634

    Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


    Original     		PDF 5962-01B01 4138G ATMEL 634 MH1099 MH1242 PO11V5 dual lvds vhdl

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)


    Original     		PDF 5962-01B01 4138Gâ

    A101

    Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
    Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC


    Original     		PDF 4110K A101 A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard

    Atmel 544

    Abstract: atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D
    Text: Features • • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells Up to 6.5 usable Mgates equivalent NAND2 Operating voltage 1.8V for core and 3.3V or 2.5V for I/O’s Memory Cells Compiled or synthesized to the Requirements of the Design


    Original     		PDF 655Mbps) 4261G Atmel 544 atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D

    Transistor Equivalent list po55

    Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
    Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to


    Original     		PDF

    5962-01B01

    Abstract: perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-02-11 Thoma M. Hess Add device type 09 – 32 and appendix A. - phn REV A SHEET 55 REV A A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 REV A A


    Original     		PDF F7400 5962-01B01 perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V

    atmel13

    Abstract: 0.18-um CMOS technology characteristics DIGITAL IC TESTER report for project ATMEL 644 IO33 IC Ensemble ATC18RHA IBIS model Genibis Atmel IO33 ATC18RHA atmel 336
    Text: Features • Comprehensive Library of Standard Logic and I/O Cells • ATC18RHA Core and IO18 pads Designed to Operate with VDD = 1.8V +/- 0.15V as Main • • • • • • • • • • • • Condition IO33 Pad Libraries Provide Interfaces to 3.3+/-0.3V Environments


    Original     		PDF ATC18RHA 655Mbps) 4261B atmel13 0.18-um CMOS technology characteristics DIGITAL IC TESTER report for project ATMEL 644 IO33 IC Ensemble IBIS model Genibis Atmel IO33 ATC18RHA atmel 336

    qml-38535

    Abstract: 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to


    Original     		PDF F7400 qml-38535 6227 4090 Datasheet ci 4009 Y-351 vhdl code 4794 smd code MH1