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    MHVIC915 EQUIVALENT Search Results

    MHVIC915 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MHVIC915 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE Z1 04 833 motorola

    Abstract: MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1 MHVIC915 MW4IC2230
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN1987/D SEMICONDUCTOR APPLICATION NOTE AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that


    Original     		PDF AN1987/D AN1987 MHVIC915 MW4IC915, MWIC930, MW4IC2020, MW4IC2230 MW5IC2030. DIODE Z1 04 833 motorola MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1

    AN1987

    Abstract: ibsg BC857ALT1 MHVIC915 MW4IC2020 MW4IC2230 MW4IC915 MWIC930 cdma study
    Text: Freescale Semiconductor Application Note AN1987 Rev. 1, 5/2004 Quiescent Current Control for the RF Integrated Circuit Device Family By: James Seto INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that can be used with the Freescale family of RF integrated


    Original     		PDF AN1987 MHVIC915 MW4IC915, MWIC930, MW4IC2020, MW4IC2230 MW5IC2030. AN1987 ibsg BC857ALT1 MW4IC2020 MW4IC915 MWIC930 cdma study

    J673

    Abstract: J612 J582 J279
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure.


    Original     		PDF MHVIC915R2 J673 J612 J582 J279

    GM 950 motorola

    Abstract: ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915 MHVIC915R2
    Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26


    Original     		PDF MHVIC915R2/D MHVIC915R2 MHVIC915R2 GM 950 motorola ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915

    J361 IC

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26


    Original     		PDF MHVIC915R2/D MHVIC915R2 J361 IC

    J595

    Abstract: J673 J361
    Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26


    Original     		PDF MHVIC915R2/D MHVIC915R2 J595 J673 J361

    GM 950 motorola

    Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and


    Original     		PDF MHVIC915R2/D MHVIC915R2 MHVIC915R2 GM 950 motorola A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 198MHz

    A113

    Abstract: ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2
    Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26


    Original     		PDF MHVIC915R2/D MHVIC915R2 MHVIC915R2 A113 ECEV1HA100SP GRM40 GRM42 MHVIC915

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 IS-95 MHVIC915NR2

    Murata grm40

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 MHVIC915R2 Murata grm40

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 MHVIC915NR2

    MHVIC915 equivalent

    Abstract: MHVIC915NR2
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 IS-95 MHVIC915NR2 MHVIC915 equivalent

    J703

    Abstract: No abstract text available
    Text: Document Number: MHVIC915R2 Rev. 8, 8/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to


    Original     		PDF MHVIC915R2 J703

    J40-5

    Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915NR2 MHVIC915NR2 J40-5 FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22

    GRM40X7R103J050BD

    Abstract: J422 RM73B2AT104J j392 FET J134
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 IS-95 MHVIC915R2 GRM40X7R103J050BD J422 RM73B2AT104J j392 FET J134

    marking J6 transistors

    Abstract: J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to


    Original     		PDF MHVIC915R2 marking J6 transistors J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115

    J673

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base


    Original     		PDF MHVIC915R2 J673

    AN1977

    Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
    Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 MHVIC915R2 AN1977 AN1987 GRM40 020C Circuit Diagram Panasonic Model DIM 74

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on−chip matching that makes it usable from 750 to 1000 MHz. This multi−stage


    Original     		PDF MHVIC915R2 IS-95

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3