MICRON POWER Search Results

PC/104

Contextual Info: MICRON MICRON MICRON MICRON Low power 200MHz PR266 or 250MHz (PR366) CPU options Up to 256MB SDRAM SST ATA-Disk Chip and CompactFlash support Integrated AGP (x2) Trident CyberBlade Graphics for LCD and CRT 10/100Base-T Ethernet Soundblaster compatible Audio (optional)

image sensor micron

Abstract: micron sensor micron HEADBOARD Micron Imaging Demo2 Camera Board Micron Sensor CMOS image sensor usb Contact Image Sensor Head Micron micron CMOS Camera ADAPTEC block diagram OF pentium 2
Contextual Info: Image Sensor Demo System Kits Introduction Image Sensor Demo System Kits Introduction Micron’s CMOS image sensor demo kits are USB-powered camera boards that enable easy testing and characterization of Micron sensors. The Micron Imaging demonstration system family supports the full line of Micron’s CMOS image sensor products.

Micron Technology

Contextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and

AMI350XXPR

Abstract: ODCHXX16 MAP 3959 crystal oscillator 4049
Contextual Info: 0.35 Micron CMOS Pad Library Datasheets AMI350XXPR 3.3/5.0 Volt Section 4 PAD LIBRARY Revision 1.1 PAD LIBRARY SELECTIO DATASHEETS Pad Logic AMI350XXPR 0.35 micron CMOS Pad Library 4-3 AMI350XXPR 0.35 micron CMOS Pad Library Pad Logic PAD SELECTION GUIDE

dram structure

Abstract: 2240 6T SRAM micron sram
Contextual Info: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they

Contextual Info: MICRON' I 4 MEG x 16 E D O D R A lV l TECHNOLOGY, INC. n P A M MT4LC4M16R6 MT4LC4M16N3 U r iM IV I For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply

Atmel oak dsp core

Abstract: block diagram for barrel shifter PPAP "saturation arithmetic"
Contextual Info: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V

Contextual Info: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View

MwT-273

Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

F4029

Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

nd02d2

Contextual Info: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design

dram 88 pin

Contextual Info: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T

Micron NAND

Abstract: design manual atmel atl ATL25 ATL35
Contextual Info: Below are the ATL25 0.25 micron , ALT35 (0.35 micron) and ATL60/ATLS60 (0.6 micron) design manual sections, followed by five sections which are common to all Atmel design manuals (Design, Test, Packaging, Q&R, and Military & Aerospace). ASIC Checklists Kickoff Meeting Checklist - V 3.2

2 bit magnitude comparator

Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Contextual Info: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and

fan 7320

Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Contextual Info: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal

Andrew

Abstract: RF 8SF
Contextual Info: Inside the New Computer Industry • January 2001 • Andrew Allison The 0.13 micron Race It appears that 0.13 micron gamesmanship is widespread: Despite the fact that I checked the 0.13 micron story twice with Motorola, what that company is really shipping Intelligence, December

02011-BRF-001-A

Abstract: M02011 TIA AGC application note
Contextual Info: 622Mbps Transimpedance Amplifier with AGC M02011 Low-power, high-sensitivity, 622Mbps transimpedance amplifier fabricated in sub-micron CMOS The M02011 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for

micron sram

Contextual Info: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first

m25p40vmb6txx

Abstract: M25PX64 M25P40-VMB6 M25P UID M25P40 JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package
Contextual Info: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx

14020

Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Contextual Info: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.

rpp1k1

Contextual Info: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate

UM 9515

Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
Contextual Info: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation

32M DPRAM

Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Contextual Info: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers