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    MICRON POWER RESISTOR H33 Search Results

    MICRON POWER RESISTOR H33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    MICRON POWER RESISTOR H33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29F2G16ABA

    Abstract: SEAM-40 SMD23 MICRON POWER RESISTOR H33 SEAF-40-05 PISMO2-00006 MT29F2G16AAA MICRON 1.8V 2GB NAND MT29F1G16 PISMO2-P6960
    Text: Advance‡ PISMO2-00006: Micron Mobile SDR SDRAM + NAND Module Introduction Micron PISMO Module Data Sheet PISMO2-00006: Mobile SDR SDRAM + NAND Flash Introduction The PISMO Platform Independent Storage MOdule specification provides a standard external interface to ease memory performance evaluation. This document describes


    Original     		PDF PISMO2-00006: PISMO2-P6960 24AA64-I/ST 09005aef82c0b66c/Source: 09005aef82c0b648 MT29F2G16ABA SEAM-40 SMD23 MICRON POWER RESISTOR H33 SEAF-40-05 PISMO2-00006 MT29F2G16AAA MICRON 1.8V 2GB NAND MT29F1G16 PISMO2-P6960

    diode c723

    Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401EL PTFA072401FL 240-watt H-33288-2 H-34288-2 diode c723 VARIABLE RESISTOR 2K LM7805 RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR

    tca 770

    Abstract: tca 765 ceramic capacitor 39 pf
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401FL 240-watt H-33288-2 H-34288-2 tca 770 tca 765 ceramic capacitor 39 pf

    Untitled

    Abstract: No abstract text available
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power ampliier applications in the


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401EL PTFA072401FL 240-watt H-33288-2 H-34288-2

    PTFA072401FLV5XWSA1

    Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
    Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the


    Original     		PDF PTFA072401EL PTFA072401FL PTFA072401FL 240-watt H-33288-2 H-34288-2 PTFA072401FLV5XWSA1 VARIABLE RESISTOR 2K LM7805 LTN 156

    Untitled

    Abstract: No abstract text available
    Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz


    Original     		PDF PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt

    transistor D331 circuit diagram application

    Abstract: d331 TRANSISTOR equivalent transistor D331 datasheet D331 transistor transistor d331 transistor D331 circuit diagram D331 DVB-T Schematic PTFA142401EL D331 datasheet
    Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz


    Original     		PDF PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt transistor D331 circuit diagram application d331 TRANSISTOR equivalent transistor D331 datasheet D331 transistor transistor d331 transistor D331 circuit diagram D331 DVB-T Schematic D331 datasheet

    Untitled

    Abstract: No abstract text available
    Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description 20 in -35 ACPR Hi ACPR Low -45 44 45 46 47 48 10 Drain Efficiency % 30 -30 43 t • Broadband internal matching


    Original     		PDF PTFA142401EL PTFA142401FL

    100uf HFK

    Abstract: HFK CAPACITOR 100 HFK capacitor
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor

    Untitled

    Abstract: No abstract text available
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-34288-4/2

    100 HFK

    Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100 HFK HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960

    CW 7805

    Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
    Text: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-33288-6 H-34288-6 CW 7805 H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND

    7909 regulator

    Abstract: PTFA092213ELV4
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213FL 220-watt, H-33288-6 H-34288-4/2 7909 regulator PTFA092213ELV4

    SMV-R010

    Abstract: schematic diagram lcd monitor samsung xc5vlx50tffg1136 4433 mosfet DISPLAYTECH* 64128 Micron TN-47-01 smv r010 mosfet 4433 ML561 370HR
    Text: Virtex-5 FPGA ML561 Memory Interfaces Development Board User Guide UG199 v1.2.1 June 15, 2009 R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the


    Original     		PDF ML561 UG199 ML561 SMV-R010 schematic diagram lcd monitor samsung xc5vlx50tffg1136 4433 mosfet DISPLAYTECH* 64128 Micron TN-47-01 smv r010 mosfet 4433 370HR

    TL235

    Abstract: TL236 TL230 TRANSISTOR tl131 TL1251
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-6 TL235 TL236 TL230 TRANSISTOR tl131 TL1251

    tBGA672

    Abstract: JOHNSON CONTROL service manual circuits
    Text: Freescale Semiconductor Technical Data Document Number: MPC8347EAEC Rev. 7, 07/2007 MPC8347EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications The MPC8347EA PowerQUICC™ II Pro is a next generation PowerQUICC II integrated host processor. The


    Original     		PDF MPC8347EAEC MPC8347EA MPC8349EA 5A992 tBGA672 JOHNSON CONTROL service manual circuits

    Untitled

    Abstract: No abstract text available
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2

    TL117

    Abstract: c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, TL117 c103 TRANSISTOR DATA TL130 TRANSISTOR tl131 BCP5616TA c103 TRANSISTOR TL131 TRANSISTOR c104 C801 C802

    Untitled

    Abstract: No abstract text available
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803EL PTFB211803FL 180-watt H-34288-4/2 21ngerous

    TL2322

    Abstract: transistor tl120
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803FL 180-watt H-33288-6 H-34288-4/2 TL2322 transistor tl120

    TL139

    Abstract: c803
    Text: PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier


    Original     		PDF PTFB211503EL PTFB211503FL PTFB211503EL PTFB211503FL 150-watt, H-33288-6 H-34288-4/2 TL139 c803

    TRANSISTOR tl131

    Abstract: TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803
    Text: PTFB211803EL PTFB211803FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB211803EL PTFB211803FL PTFB211803EL PTFB211803FL 180-watt TRANSISTOR tl131 TL136 tl2322 TL2222 c103 TRANSISTOR TL237 TRANSISTOR c104 C801 C802 C803

    PTFB182503FL

    Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND tl136 PTFB182503 ER805 tl1182 ptfb182503el tl239
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2 TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND tl136 PTFB182503 ER805 tl1182 tl239