MICROWAVE POWER GAAS Search Results

high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Contextual Info: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding

S9G66A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET N on-M atched MICROWAVE SEMICONDUCTOR S9G66A Preliminary TECHNICAL DATA SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL PldB

371 fet

Abstract: TIM1414-4LA-371
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM1414-8-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA CHARACTERISTICS Output Power at ldB Gain Compression Point Power Gain at ldB Gain Compression Point Drain Current Power Added Efficiency SYMBOL PldB G ldB CONDITION VDD=9V

Contextual Info: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET Non-Matched S9666A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25° C Ì CHARACTERISTICS Output Power at IdB Compression Point Power Gain at IdB Compression Point Drain Current

JS9P05-AS

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •HIG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

JS9P04-AS

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •HIGH POWER P1dB=26. OdBm @ f = 38GHz ■CHIP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

S9G67A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET Non-Matched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G67A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent

CLX34

Abstract: CLX34-00 CLX34-05 CLX34-10
Contextual Info: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY35

Abstract: CLY35-00 CLY35-05 CLY35-10
Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY38

Abstract: CLY38-00 CLY38-05 CLY38-10
Contextual Info: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY32

Abstract: CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX27

Abstract: CLX27-00 CLX27-05 CLX27-10
Contextual Info: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
Contextual Info: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX27

Abstract: CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169
Contextual Info: CLX27. HiRel X- Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX30

Abstract: CLX30-00 CLX30-05 CLX30-10
Contextual Info: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY38

Abstract: CLY38-00 CLY38-05 CLY38-10
Contextual Info: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

CLX30

Abstract: CLX30-00 CLX30-05 CLX30-10 siemens 230 98 O
Contextual Info: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

CLX27

Abstract: CLX27-00 CLX27-05 CLX27-10 siemens 1713
Contextual Info: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

TPM2626-60

Contextual Info: MICROWAVE POWER GaAs FET TPM2626-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n High Power P1dB=48.0dBm TYP. at 2.6GHz n n Partially Matched Type n Hermetically Sealed Package High Power Gain G1dB=10dB(TYP.) at 2.6GHz RF PERFORMANCE SPECIFICATIONS (Ta=25 o C)