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    MJ 10261 Search Results

    MJ 10261 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    M1026-13-155.5200 Renesas Electronics Corporation VCSO Based Clock PLL with Autoswitch Function Visit Renesas Electronics Corporation
    M1026-13-155.5200T Renesas Electronics Corporation VCSO Based Clock PLL with Autoswitch Function Visit Renesas Electronics Corporation
    UE863G162010261 Amphenol Communications Solutions 2X1SFP ULTRAPORT W/H LP Visit Amphenol Communications Solutions
    54122-410261920LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 26 position, 2.54mm (0.100in) pitch Visit Amphenol Communications Solutions
    54122-810261100LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 26 position, 2.54mm (0.100in) pitch Visit Amphenol Communications Solutions
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    MJ 10261 Price and Stock

    TT Electronics plc HVC2010-261MJT3

    Thick Film Resistors - SMD 2010 261 Mohms 5% 100 PPM
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    Mouser Electronics HVC2010-261MJT3
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    MJ 10261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0100Z Rev.1.10 2004.03.08 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ-XXXFP and M306V7FG/FH/FJFP are single-chip microcomputers using the highperformance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin


    Original     		PDF M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0100Z 16-BIT M306V7MG/MH/MJ-XXXFP M306V7FG/FH/FJFP M16C/60 100-pin 525eserved.

    RC21 SERIES

    Abstract: DPS01 BC5 CSR CSR BC5 runing led circuit datasheet 073D1 Nippon capacitors
    Text: M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0100Z Rev.1.30 2004.03.25 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ-XXXFP and M306V7FG/FH/FJFP are single-chip microcomputers using the highperformance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin


    Original     		PDF M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0100Z 16-BIT M306V7MG/MH/MJ-XXXFP M306V7FG/FH/FJFP M16C/60 100-pin 525nged. RC21 SERIES DPS01 BC5 CSR CSR BC5 runing led circuit datasheet 073D1 Nippon capacitors

    0C72

    Abstract: THEFT CSR BC5 BC5 CSR rc21 series bc6 csr block 106416 ccd board crt OSD on-screen display OSD data slicer
    Text: M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP REJ03B0094-0100Z Rev.1.00 May 18, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ/MJA-XXXFP and M306V7FG/FH/FJ/FJAFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged


    Original     		PDF M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP REJ03B0094-0100Z 16-BIT M306V7MG/MH/MJ/MJA-XXXFP M306V7FG/FH/FJ/FJAFP M16C/60 100-pin 0C72 THEFT CSR BC5 BC5 CSR rc21 series bc6 csr block 106416 ccd board crt OSD on-screen display OSD data slicer

    CSR BC4

    Abstract: CSR BC5 CSR BC6 BC5 CSR runing led circuit datasheet DSC02 073D1 Nippon capacitors
    Text: M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0140Z Rev.1.40 Oct 06, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ-XXXFP and M306V7FG/FH/FJFP are single-chip microcomputers using the highperformance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 100-pin


    Original     		PDF M306V7MG/MH/MJ-XXXFP, M306V7FG/FH/FJFP REJ03B0045-0140Z 16-BIT M306V7MG/MH/MJ-XXXFP M306V7FG/FH/FJFP M16C/60 100-pin Unit2607 CSR BC4 CSR BC5 CSR BC6 BC5 CSR runing led circuit datasheet DSC02 073D1 Nippon capacitors

    CSR BC5

    Abstract: RBS 2106 installation procedures BC5 CSR CSR BC6 RBS 2102 installation C2H04 RBS 2106 operating weight 06C001 dps01 DSC112
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP CSR BC5 RBS 2106 installation procedures BC5 CSR CSR BC6 RBS 2102 installation C2H04 RBS 2106 operating weight 06C001 dps01 DSC112

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110

    100N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXYR100N120C3 IC110 110ns ISOPLUS247TM 100N120C3

    Untitled

    Abstract: No abstract text available
    Text: IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXYR100N120C3 IC110 110ns ISOPLUS247TM 100N120C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IC110 IXYR100N120C3 110ns ISOPLUS247TM 100N120C3

    100N120C3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXYR100N120C3 IC110 110ns ISOPLUS247TM 100N120C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXYN100N120C3 IC110 110ns OT-227B, E153432 100N120C3

    IXYN100N120C3

    Abstract: 100N120 100N120C3
    Text: Advance Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXYN100N120C3 IC110 110ns OT-227B, E153432 100N120C3 IXYN100N120C3 100N120

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 86A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXYN100N120C3 110ns OT-227B, E153432 100N120C3

    IXYN100N120C3H1

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYK100N120C3 IXYX100N120C3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYK100N120C3 IXYX100N120C3 IC110 110ns O-264 100N120C3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYK100N120C3 IXYX100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXYK100N120C3 IXYX100N120C3 110ns O-264 100N120C3

    IXYX100N120C3

    Abstract: 100N120 max3052 IXYK100N120C3 100N120C3 IXYX
    Text: Advance Technical Information IXYK100N120C3 IXYX100N120C3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 100A 3.5V 110ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXYK100N120C3 IXYX100N120C3 IC110 110ns O-264 100N120C3 IXYX100N120C3 100N120 max3052 IXYX

    IXTH3N150

    Abstract: No abstract text available
    Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on  1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150

    IXTH3N150

    Abstract: No abstract text available
    Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150

    IXTH4N150

    Abstract: 4n150
    Text: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150

    IXTH3N150

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150

    IXTH4N150

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150

    IXTH3N150

    Abstract: 3N150 T3N1 Vdss 1500V
    Text: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH3N150 O-247 100ms 3N150 0-26-10-A IXTH3N150 T3N1 Vdss 1500V