MJ 3035 Search Results

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

A6165

Abstract: fr1s 15C6 CAB-54C JD 1806 6605 11C6 CAB32 cab-47 mn 9105
Contextual Info: Lrttte Rebete are one of Ohmite's more economical lines o i low wattage resistors. Constructed of a pure carton film deposited on a higi\-flrade c eram c body, these unit* orter better stability perfor­ m ance than comparable carbon composition resistors.

16kx8 static ram ttl

Abstract: 1K x 8 static ram 6116 RAM SRAM 6116 ram 6116 29FCT520 c 3198 transistor MQUAD 72125 8kx9 sram
Contextual Info: As of 9/28/95 Page 1 Alpha-Numeric List of Products Product 10474 10480 10484 10490 10494 10504 10A474 10A484 10B484 29FCT2052 29FCT52 29FCT520 29FCT520T 29FCT521T 29FCT52T 29FCT53 29FCT53T 49C3466 49C402 49C460 49C465 49C466 49FCT3805 49FCT805 49FCT805T 49FCT806

6116 RAM

Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Contextual Info: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns

HEXFETs FETs

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1475 REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL _ S IN G L E E V E N T E F F E C T S E E R A P H A R D 500 Volt, 0.32£2, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

Contextual Info: International I R Rectifier Provisional Data Sheet No. PD-9.1446A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7360SE HEXFET TRANSISTOR N-CHANNEL _ S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 0.20Q, (SEE) RAD HARD HEXFET

Contextual Info: Provisional Data Sheet No. PD-9.1446 In te rn a tio n a l IO R Rectifier IRHI7360SE R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D HEXFET TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D

Contextual Info: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and

Sw 2604

Abstract: 16kx8 static ram ttl 79r4600 4Kx8 Dual-Port Static RAM 4Kx4 SRAM 49c402 4kx8 sram SW 2603 sem 3040 ram 6116
Contextual Info: As of 10/10/95 Page 1 Product Selector Guide RISC Microprocessors and Embedded Control Products Product Product Description 32-bit RISC CPUs Speeds Pkgs Temp Volt Cache Other Data Doc ID Avail Speeds Pkgs Temp Volt Cache Other Data Doc ID Avail Support Chips for 32-bit CPUs

TNT0281-E

Abstract: EPCOS 350 01 O EPCOS 350 06 O
Contextual Info: A EPCOS Heißleiter-Sensoren NTC Thermistor Sensors Glasumhüllt / Glass-Encapsulated EPCOS02034 EPCQS02034 2,0 a 0,3 Typ/Type G450 Maßstab/Scale 9: Hitzebeständig und elektrisch stabil durch G lasum hüllung Autom atisch bestückbares Bauelement Geeignet für Schwall- und R eflowlötung

SBR3035

Abstract: SBR3040 SBR3045 SBR3050 AU155
Contextual Info: Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes N o tes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1/ 2 threads Standard Polarity; Stud is Cathode. Reverse Polarity Stud Is Anode A B C D E F G H J M N P 1 .4 2 4 .4 3 7 .5 0 5 .8 0 0 .4 5 3

Sw 2604

Abstract: sem 3040 A 2611 data sheet 1kx8 static ram 54/74 TTL series 16kx8 static ram ttl 6116 sram 6168 sc 64Kx8 dual-port CMOS RAM cmos SRAM 35ns 128k X 8 dip
Contextual Info: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Interactive Product Selector Guide RISC Microprocessors and Embedded Control Products Doc ID Product Product Description Doc ID RISC CPUs 32-bit Speeds Pkgs Temp Volt Cache Other Data Avail Speeds Pkgs

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: MOTOROLA Order this document by MBRB3030CTL/D SEMICONDUCTOR TECHNICAL DATA Advance Information Switchmode Power R ectifier MBRB3030CTL . . . using the S cho ttky B arrier princip le w ith a p ro p rie ta ry b a rrie r m etal. These s ta te - o f- th e - a r t d e vice s have the follow ing fea tu res:

Contextual Info: Type 53D VISHAY Vishay Sprague ▼ Aluminum Capacitors + 85 C, Tubular, Axial Lead, G eneral Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor PERFORMANCE C HARACTERISTICS Life Validation Test: 1000 hours at + 85°C: A CAP < 15%

gt 1141

Abstract: ge 4110 53D432G025HJ6 ge 925 53D101F250GJ6 sprague AXIAL CAPACITOR sprague 53d 53D SPRAGUE 53d212g035gj6 53D351F200JL6
Contextual Info: 53D Vishay Sprague Aluminum Capacitors + 85 °C, Tubular, Axial Lead, General Purpose FEATURES • General purpose capacitor • Rugged construction Fig.1 Component outlines. • Largest CV ratings in axial leaded capacitor RIPPLE CURRENT MULTIPLIERS QUICK REFERENCE DATA

53D103G016HL6

Abstract: 53D212G035GJ6
Contextual Info: 53D Vishay Sprague Aluminum Capacitors + 85 °C, Tubular, Axial Lead, General Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor Fig.1 Component outlines. RIPPLE CURRENT MULTIPLIERS QUICK REFERENCE DATA

sprague 53D

Abstract: 53D222G063HL6 53D103G016HL6 53D212G035GJ6 53D101
Contextual Info: 53D Vishay Sprague Aluminum Capacitors + 85 °C, Tubular, Axial Lead, General Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor Fig.1 Component outlines QUICK REFERENCE DATA DESCRIPTION

APT12031JLL

Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
Contextual Info: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

APT12031JFLL

Abstract: APT12031JLL
Contextual Info: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

980 Series

Abstract: sprague 53D 53D103G016HL6 53D212G035GJ6 53D222G063HL6 53D832G035JP6 2800uF ge 4110 53d series
Contextual Info: 53D Vishay Sprague Aluminum Capacitors + 85 °C, Tubular, Axial Lead, General Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor Fig.1 Component outlines QUICK REFERENCE DATA DESCRIPTION

Contextual Info: APT12031JFLL 1200V 30A 0.33 Ω R POWER MOS 7 FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

apt12031jfll

Abstract: APT12031JLL 1460F
Contextual Info: APT12031JFLL 1200V 30A 0.310Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT12031

Contextual Info: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel