MJE13007* TRANSISTOR Search Results

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

MJE13007G

Abstract: MJE13007 utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is

Transistor morocco mje13007

Abstract: ST MJE13007 MJE13007 ST MJE13007 MJE-13007 mje13007 equivalent
Contextual Info: MJE13007  SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220

Transistor morocco mje13007

Abstract: MJE13007 MJE13007A
Contextual Info: MJE13007 MJE13007A SILICON NPN SWITCHING TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE13007 and MJE13007A are silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control,

transistor mje13007 equivalent

Abstract: 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D
Contextual Info: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007-P Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is

MJE13007G

Abstract: MJE13007 MJE13007G TO-220
Contextual Info: MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as

MJE13007

Abstract: mje13007 TRANSISTOR transistor MJE13007
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is

transistor mje13007 equivalent

Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
Contextual Info: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching

*e13007

Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

transistor mje13007 equivalent

Abstract: mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007 MJE13007-TA3-T MJE13007-TF3-T MPF930
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is

MJE13007G

Abstract: SUS CIRCUIT transistor mje13007 equivalent MJE13007 AN719 AN873 AN875 AN951 MPF930 MUR105
Contextual Info: MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as

NPN Transistor 50A 400V

Abstract: to220f transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 1 „ TO-220F DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is

MJE13007-M

Abstract: NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is

MJE13007G

Abstract: rb28 MJE13007 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is

Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

AN719

Abstract: transistor mje13007 equivalent on semiconductor AN719 AN569 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
Contextual Info: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching

mje13007-1

Abstract: MJE13007 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007
Contextual Info: ON Semiconductort MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching

transistor mje13007 equivalent

Abstract: mtp8p mje13007 equivalent
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

Contextual Info: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

mje13007-1

Abstract: MJE130 mje13007 equivalent MJE13007 transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951
Contextual Info: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching

Contextual Info: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

MJE13007

Abstract: MJE13006 mje13007 TRANSISTOR MJE-13007
Contextual Info: MJE13006 MJE13007 ♦I central Sem iconductor Central Sem iconductor NPN SILICON TRANSISTOR JEDEC T0-220 CASE 1 4 8 -B La m ar S tre e t W e s t B abylon , N e w Y o rk 1 1 7 0 4 DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13006, MJE13007 types are Silicon NPN Transistors designed for