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    MJE13007 TRANSISTOR Search Results

    MJE13007 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    MJE13007 TRANSISTOR Price and Stock

    NTE Electronics Inc MJE13007

    Transistor - Silicon - NPN - 8A - 400V - TO-220.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MJE13007 101
    • 1 -
    • 10 -
    • 100 $1.74
    • 1000 $1.47
    • 10000 $1.37
    		Buy Now

    MJE13007 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE13007G

    Abstract: MJE13007 utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3- MJE13007L-TA3-T MJE13007L-TF3- MJE13007G-TA3-T MJE13007G-TF3- MJE13007G utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor

    Transistor morocco mje13007

    Abstract: ST MJE13007 MJE13007 ST MJE13007 MJE-13007 mje13007 equivalent
    Text: MJE13007  SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220


    Original     		PDF MJE13007 MJE13007 O-220 Transistor morocco mje13007 ST MJE13007 MJE13007 ST MJE-13007 mje13007 equivalent

    Transistor morocco mje13007

    Abstract: MJE13007 MJE13007A
    Text: MJE13007 MJE13007A SILICON NPN SWITCHING TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE13007 and MJE13007A are silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control,


    Original     		PDF MJE13007 MJE13007A MJE13007 MJE13007A O-220 O-220 Transistor morocco mje13007

    transistor mje13007 equivalent

    Abstract: 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D
    Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching


    Original     		PDF MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007-Q MJE13007-Q MJE13007L-Q-TA3-T MJE13007G-Q-TA3-T O-220 QW-R203-046

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-P Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007-P MJE13007-P MJE13007L-P-TA3-T MJE13007G-P-TA3-T O-220 QW-R203-047

    MJE13007G

    Abstract: MJE13007 MJE13007G TO-220
    Text: MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as


    Original     		PDF MJE13007 MJE13007 O-220 MJE13007G MJE13007G TO-220

    MJE13007

    Abstract: mje13007 TRANSISTOR transistor MJE13007
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T O-220 O-220F MJE13007L-TA3-T O-220, mje13007 TRANSISTOR transistor MJE13007

    transistor mje13007 equivalent

    Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
    Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching


    Original     		PDF MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    transistor mje13007 equivalent

    Abstract: mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007 MJE13007-TA3-T MJE13007-TF3-T MPF930
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 O-220 MJE13007 O-220F MJE13007L MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T transistor mje13007 equivalent mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007-TA3-T MJE13007-TF3-T MPF930

    MJE13007G

    Abstract: SUS CIRCUIT transistor mje13007 equivalent MJE13007 AN719 AN873 AN875 AN951 MPF930 MUR105
    Text: MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as


    Original     		PDF MJE13007 MJE13007 O-220 MJE13007/D MJE13007G SUS CIRCUIT transistor mje13007 equivalent AN719 AN873 AN875 AN951 MPF930 MUR105

    NPN Transistor 50A 400V

    Abstract: to220f transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 1 „ TO-220F DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 O-220 O-220F MJE13007 O-220F1 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T NPN Transistor 50A 400V to220f transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS  DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L-TA3-T MJE13007G-TA3-T MJE13007L-TF3-T MJE13007G-TF3-T MJE13007L-TF1-T MJE13007G-TF1-T MJE13007L-TF2-T MJE13007G-TF2-T

    MJE13007G

    Abstract: rb28 MJE13007 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS „ DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is


    Original     		PDF MJE13007 MJE13007 MJE13007L MJE13007G MJE13007-TA3-T MJE13007-TF3-R MJE13007L-TA3-T MJE13007L-TF3-R MJE13007G-TA3-T MJE13007G-TF3-R MJE13007G rb28 utc mje13007l MJE13007L-TA3-T MJE13007-TA3-T MJE13007* transistor MJE130

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220F MJE13007L QW-R219-004

    AN719

    Abstract: transistor mje13007 equivalent on semiconductor AN719 AN569 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
    Text: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching


    Original     		PDF MJE13007 O-220 AN569 AN719 transistor mje13007 equivalent on semiconductor AN719 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor

    mje13007-1

    Abstract: MJE13007 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007
    Text: ON Semiconductort MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching


    Original     		PDF MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007

    transistor mje13007 equivalent

    Abstract: mtp8p mje13007 equivalent
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 transistor mje13007 equivalent mtp8p mje13007 equivalent

    mje13007-1

    Abstract: MJE130 mje13007 equivalent MJE13007 transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951
    Text: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching


    Original     		PDF MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 MJE130 mje13007 equivalent transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951

    Untitled

    Abstract: No abstract text available
    Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220


    OCR Scan     		PDF MJE13007 MJE13007 T0-220

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­


    OCR Scan     		PDF MJE13006 MJE13007/A MJE13006, MJE13007 MJE13007A O-220 JE13007A 2N5191, JE13006-M JE13007-M

    Untitled

    Abstract: No abstract text available
    Text: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­


    OCR Scan     		PDF 73232J7 MJE13006 MJE13007/A MJE13006, MJE13007 MJE13007Aare O-220 MJE13007A MJE13006 7T2T237

    MJE13007

    Abstract: MJE13006 mje13007 TRANSISTOR MJE-13007
    Text: MJE13006 MJE13007 ♦I central Sem iconductor Central Sem iconductor NPN SILICON TRANSISTOR JEDEC T0-220 CASE 1 4 8 -B La m ar S tre e t W e s t B abylon , N e w Y o rk 1 1 7 0 4 DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13006, MJE13007 types are Silicon NPN Transistors designed for


    OCR Scan     		PDF MJE13006 MJE13007 T0-220 MJE13006, MJE13007 500mA, mje13007 TRANSISTOR MJE-13007