MJJ TRANSISTOR Search Results

BDT95

Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94
Contextual Info: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA

Contextual Info: ObE D N AMER P H I L I P S / D I S C R E T E • Jl MAINTENANCE TYPE D D lS in 1 PV3742B4X T - 'll- O ' MICROWAVE POWER TRANSISTOR N-P-N silicon transistor for use in common-base class-B power amplifiers up to 4,2 GHz, . Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

BSW68A

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSW68A NPN switching transistor FEATURES • High current (max. 1 A) PINNING • High voltage (max. 150V). APPLICATIONS PIN » General purpose switching and amplification

RF MOSFET

Abstract: MRF171A
Contextual Info: •sSsmi-Conductoi ZPtoauati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from

2sd2037

Abstract: 2SB1357 2sd2037 transistor
Contextual Info: h 7 > y ^ í í / T ransistors 2SB1357 2SB1357 T V j\s —rfó X PNP '> U =i > E p itaxial P la n a r P N P S ilico n Transistor f é J i j & ^ ^ i i ' i i f f l / L o w F re q . P o w er A m p . • fis vtiiE]/D im ensions Unit : mm) 1) V c e (satl^'ffi'-'o

Contextual Info: _ J BD933; 935 BD937; 939 BD941 V SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur.

TIP136

Abstract: TIP137 TIP137 Darlington transistor TIP130 TIP131 TIP132 TIP135 ip12
Contextual Info: TIP135 TIP136 TIP137 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. TO-220AB plastic envelope. N-P-N equivalents are TIP130, TIP131 and TIP132.

BD941

Abstract: b 939 a BD933 BD934 BD937 IEC134 IC 935
Contextual Info: BD933; 935 BD937; 939 BD941 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BD934; 936; 938; 940 and 942.

LZ1418E100R

Abstract: data transistor scans
Contextual Info: _ I_I_ _ _ N AMER PHILIPS/DISCRETE übE D • ^53=131 0015031 1 m LZ1418E100R _ Â T -3 3 -U MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in

b0330

Contextual Info: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0

BU706

Abstract: specification of curve tracer BU706D
Contextual Info: Philips Sem iconductors Product specification Silicon diffused power transistors BU706; BU706D High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-m ode applications. The

TIP29

Abstract: TIP29B TIP30
Contextual Info: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.

BDx77 magna

Abstract: BDX77 BDX78
Contextual Info: MAGNA BDX78 SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope, intended for industrial amplifier and switching applications. N-P-N complement B D X 77 . Q U IC K R E F E R E N C E D A T A Collector-emitter voltage {open base - v CE0

BDT95

Contextual Info: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.

Contextual Info: bbSBTBl ' O D i m n Q • 2SE D N AMER PHILIPS/DISCRETE J I BD244; BD244A \ B D 2 4 4 B ; BD244C r - 3 5 - 2 S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in general amplifier and switching

BD953

Contextual Info: BD949; 951 BD953; 955 y v . SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and for switching applications.

T1P127

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT T1P121 TIP127 TIP126 circuit T1P-127 TIP126 tip125 P126 TIP120
Contextual Info: TIP125 TIP126 TIP127 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circuit fo r audio ou tp u t stages and general am plifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, T1P121

tip112a

Abstract: TIP112 TIP111 TIP110 transistor TIP110 TIP115 TIP116 darlington 131 tip
Contextual Info: TIP110 TIP111 TIP112 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am p lifie r and switching applications. TO-22QAB plastic envelope. P-N-P complements are

TIP42 philips

Abstract: T1P42B
Contextual Info: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier

r33pi

Abstract: BD243 b0244c R33p BD243C BD244 BD244A BD244B BD244C IEC134
Contextual Info: ri N AMER PHILIPS/DISCRETE _ S5E D • bbSB^l QQlTHn , Q ■ BD244; BD244A BD244B; BD244C Â r - 3 5 - ^ i SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in general amplifier and switching applications.N-P-N complements are BD243; 243A; 243B; and BD243C.

2sc372

Abstract: transistor 2sC372 2SC372Y 2SC372-Y 2SC372 transistor 2SC373 NPN 2sc372 transistor 2sc373 2SC37 2SC372 2SC373
Contextual Info: i/ 'J D ^ N P N It ^ s / ^ J W B h ^ ^ ^ C P C T B Ä SILICON NPN EPITAXIAL TRANSISTOR PCT PROCESS O o H igh Frequency A m p lifie r A p p lic a tio n s U n i t in m m Low F r e q u ö n c y A m p l i f i e r A p p l i c a t i o n s M A X I M U M RATINGS

d1694

Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base

ETN35-O3O

Abstract: L63A
Contextual Info: ETI\I35-O3O 300a • : Outline Drawings POWER TRANSISTOR MODULE ’ Features High Current • h F E ^ ^ v ,^ High DC Current Gain • Non Insulated Type 83 -iVVr'4 ‘ Applications • High Power Switching " j T - 's 'f Uninterruptible Power Supply • DC ^ —

BUT18

Abstract: BUT18A
Contextual Info: m b^E D N AUER PHILI P S / D I S C R E T E ^53^31 GDSfiMSH 15b BUT18 BUT18A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems, etc.