MM800 Search Results

MM8001

Abstract: MM8000
Contextual Info: M M 8000 silicon MM8001 NPN silicon high-frequency transistor designed for high-frequency CATV amplifier applications. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment M A X IM U M R A T IN G S Rating Symbol v C o lle c to r-E m itte r Voltage

MM8001

Abstract: M8-001 MM8000 M8000
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­

MM8006

Abstract: NPN silicon high frequency transistor
Contextual Info: MM8006 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-72 The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCBO 15 V PDISS 600 mW @ TC = 25 °C TJ -65 °C to +200 °C

Contextual Info: MM8006 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)

MM8002

Contextual Info: MM8002 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition)

Contextual Info: MM8008 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)

MM8009

Abstract: MM8008 MM8010 MM8011 38-to-38 1031W
Contextual Info: MM8009 silicon NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m u ltip lie r, or oscillator applica­ tions in m ilita ry and industrial equipment. Suitable fo r use as output, driver, or pre-driver stages in UHF equipm ent and as a fundamental

Contextual Info: MM8001 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition)28

Contextual Info: MM8009 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)45 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)15

mm8006

Abstract: To206AF small signal transistors
Contextual Info: MM8006 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type MM8006 Tj 200 hFE max hfe Notes VCBO 15 hFE A 1.0 fT 1000 Polarity NPN VCEO

MM8001

Abstract: transistor CG 391 g
Contextual Info: MOTOROLA SEMICONDUCTOR MM8000 MM8001 TECHNICAL DATA The RF Line NPN S IL IC O N A M P L IF IE R T R A N S IS T O R S NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for high frequency C.A.T.V. amplifier applications. Su it­ able for use as output driver or pre-driver stages in V H F and U H F

M8007

Abstract: M8006 MM800 MM8006 MM8007 K660
Contextual Info: MM8006 silicon MM8007 NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers in military and industrial equipment. Suitable for use in video wideband and general high-frequency amplifier applications

MPS 4355 transistor

Abstract: MM8009 mps 0737
Contextual Info: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica­ tions in m ilitary and industrial equipment. Suitable for use as output,

MM8003

Contextual Info: MM8003 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition)

Contextual Info: DRAWING No.: MM8001 0 7 E S IF IN DOUBT - NOT TO S C A LE A SK THIRD AN GLE PRO JECTIO N A LL DIM ENSIONS IN mm X . 20 - X 61.40+0.20- SPECIFO ATO N S MATERIAL: BARREL: BRASS PLUNGER: BeCu SPRING: SWP PLATING: BARREL: GOLD PLATED PLUNGER: GOLD PLATED SPRING: GOLD PLATED

Contextual Info: MM8007 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

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2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.