MMIC S-BAND LNA Search Results

LNA ka-band

Abstract: MITSUBISHI CAPACITOR
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band

vD1A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band

ka-band amplifier

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band

Vl02

Abstract: 9.75 GHz oscillator
Contextual Info: D a ta S h e e l ^ EiMhDIGICS Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs ÍC Source _ REV 2 FUNCTIONAL i? ®! Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability

Contextual Info: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Am plifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5110 is a GaAs MMIC chip

Contextual Info: New Product Information TFE-1050 915 MHz to 2.4 GHz GaAs MMIC Transceiver Features: ♦ ♦ ♦ ♦ ♦ ♦ Half Duplex C onverter Fully Integrated RF Transceiver Functions 30 dB Transm it Conversion Gain 24 dBm Output Power at ±5v Application to U S/International 2.4 GHz Band

IS-54

Abstract: SPDT FETs uPG13xG
Contextual Info: µPG13xG SERIES L-BAND SPDT SWITCH GaAs MMIC 1. OVERVIEW OF SERIES The µPG13xG Series is a collection of GaAs MMICs developed as SPDT Single-Pole, Double-Throw switches for digital mobile communications terminals on the L to S bands. These ICs can operate from 100 MHz to 2.5 GHz

BGA622L7

Abstract: Germanium Amplifier Germanium power
Contextual Info: Target Data, BGA622L7, July 2004 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier MMIC Secure Mobile Solutions Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2004-07-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

INFINEON package PART MARKING

Abstract: BGA622
Contextual Info: Preliminary data sheet, BGA622, Aug. 2002 BGA622 Silicon Germanium Wide Band Low Noise Amplifier MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-08-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

BGA430

Abstract: VPS05604
Contextual Info: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , M a y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , Ja n u a r y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-01-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

b6hf marking

Contextual Info: P r e lim in a r y d a t a s h e e t , B G A 4 3 0 , M a y 2 0 0 2 y BG A4 3 0 li m in ar Broad Band High Gain LNA P re MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

CAP 0402

Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Contextual Info: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm

Contextual Info: ;6 21  BGU8L1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8L1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external

Contextual Info: ;6 21  BGU8M1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8M1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external

Contextual Info: ASL033 5 ~ 4000 MHz MMIC Amplifier Features Description  14.6 dB Gain at 470 MHz  17 dBm P1dB at 470 MHz  18 dBm Output IP3 at 470 MHz  1.2 dB NF at 470 MHz  MTTF > 100 Years  Single Supply ASL033 is a one-stage LNA for mobile TV receiver

Contextual Info: ;6 21  BGU8H1 SiGe:C Low Noise Amplifier MMIC for LTE Rev. 1 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description The BGU8H1 is a Low Noise Amplifier LNA for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external

MIL-STD-2015

Abstract: MAAM12022 MIL-STD-3015 MAAM22010 AM 12021 AM50-0002 m540 MMIC code D AM50-0001 DCS-1800
Contextual Info: A s fe m *A Application Note m an A M P com pany GaAs MMIC Low Noise Amplifiers SOIC-8 Platform M540 V 2.00 Introduction Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers LNAs featuring single positive supply voltage, low

mmic c8

Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Contextual Info: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm