Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 15 Vdc Collector – Base Voltage
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MMPQ2369
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO 15 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 4.5 Vdc IC
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MMPQ2369
751B-05,
SO-16
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PN2369A
Abstract: IC NE 556 Rise time 1 ns MMBT2369A MMPQ2369 SOIC-16 HIGH SPEED SWITCHING NPN SOT23
Text: PN2369A MMBT2369A MMPQ2369 C B E E E B B E B E C TO-92 BE SOT-23 B C SOIC-16 Mark: 1S C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
PN2369A
MMBT2369A
IC NE 556
Rise time 1 ns
MMPQ2369
SOIC-16
HIGH SPEED SWITCHING NPN SOT23
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MMPQ2369
Abstract: No abstract text available
Text: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 4.5 Vdc IC 500
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MMPQ2369
r14525
MMPQ2369/D
MMPQ2369
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MMPQ2369
Abstract: No abstract text available
Text: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 4.5 Vdc IC 500
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MMPQ2369
r14525
MMPQ2369/D
MMPQ2369
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transistors BC 543
Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
Text: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120
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MMPQ2369A
SO-16
FMBA14
FFB2222A
FMB2222A
MMPQ2222A
transistors BC 543
F245B
BSR57M5
fmba0656
TJ309
f256c
f245a
PN5432
PN4857
2n 5459
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Quad Switching Transistor MMPQ2369 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 4.5 Vdc IC 500
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MMPQ2369
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Untitled
Abstract: No abstract text available
Text: MMPQ2369 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)1.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MMPQ2369
Freq450M
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MMPQ2369
Abstract: SO16 footprint
Text: MMPQ2369 Quad Switching Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 4.5 Vdc IC 500 mAdc Collector Current — Continuous Total Power Dissipation
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MMPQ2369
751B-05,
SO-16
MMPQ2369/D
MMPQ2369
SO16 footprint
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MMPQ2369
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMPQ2369/D SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value
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MMPQ2369/D
MMPQ2369
MMPQ2369/D*
MMPQ2369
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Untitled
Abstract: No abstract text available
Text: MMPQ2369 Quad Switching Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 4.5 Vdc IC 500 mAdc Collector Current — Continuous Total Power Dissipation
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MMPQ2369
MMPQ2369/D
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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PN2369A
Abstract: No abstract text available
Text: S i M 1 C O N B U C T O P3 PN2369A MMBT2369A B / MMPQ2369 SOT-23 MMPQ2369 SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d fo r high s p e e d s a tu ra tio n sw itc h in g a t c o llec to r c u rre n ts of 1 0 m A to 1 0 0 m A . S o u rc e d from P ro c e s s 2 1 .
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PN2369A
MMBT2369A
PN2369A
MMPQ2369
OT-23
SOIC-16
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon E □ Motorola Preferred Device E Q ik c ü E E Q E CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating Collector- Emitter Voltage Symbol Value Unit v CEO 15 Vdc Collector-Base Voltage
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MMPQ2369
751B-05,
SO-16
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PN2369A
Abstract: MMBT2369A MMPQ2369 transistor GC cd rjr ce transistor
Text: s s vis z;-c; molj z t o h PN2369A MMBT2369A MMPQ2369 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Màximum RdtinÇjS T A = 2 5 ° C u n le s s o th e r w is e n o te d
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PN2369A
MMBT2369A
MMPQ2369
MMPQ2369
transistor GC cd
rjr ce transistor
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diode
Abstract: diode array mmad1103 6700M SO-14 MMAD130 MMAD1105 MMAD1106 MMAD1107 MMAD1108
Text: SO -14, SO-16 Devices Maximum die size 75 mil x 115 mil C A S E 75 1B-05 Quad Transistors f j@ lc hpE @ lc Device MMPQ2222A MMPQ2369 MMPQ2907A MMP03467 MMPQ3725 MMPQ3799 MMPQ3904 MMPQ3906 M M PQ 6700M V BR CEO V(BR)CBO Min mA MHz Min mA 40 15 50 40 40 60 40
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SO-16
1B-05
MMPQ2222A
MMPQ2369
MMPQ2907A
MMP03467
MMPQ3725
MMPQ3799
MMPQ3904
MMPQ3906
diode
diode array
mmad1103
6700M
SO-14
MMAD130
MMAD1105
MMAD1106
MMAD1107
MMAD1108
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Untitled
Abstract: No abstract text available
Text: SiMIOONgUCTOB PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings TA = 25°C unless otherwise noted
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PN2369A
MMBT2369A
OT-23
MMPQ2369
SOIC-16
PN2369A
MMBT2369A
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154wa
Abstract: No abstract text available
Text: MMPQ2369* CASE 751B-03, STYLE 1 SO-16 M A X IM U M RATINGS Rating Symbol Value Unit v CEO 15 V dc C o lle c to r-B a s e V o lta g e VCB 40 V dc E m itte r-B a s e V o lta g e Ve b 4.5 V dc 'c 500 m Adc C o lle c to r -E m itte r V o lta g e C o lle c to r C u rre n t — C o n tin u o u s
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MMPQ2369*
751B-03,
SO-16
154wa
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Untitled
Abstract: No abstract text available
Text: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector
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PN2369A
MMBT2369A
MMPQ2369
PN2369A
MMBT2369A
OT-23
SOIC-16
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Switching Transistor MMPQ2369 NPN Silicon e E E E irvi G Ej v : E Ej v M otorola Preferred Device : C A S E 7 5 1 B -O S , S T Y L E 4 S O -1 6 MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol Value Unit
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MMPQ2369
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Untitled
Abstract: No abstract text available
Text: MMPQ2369* CASE 751B-05, STYLE 4 SO-16 M A X IM U M RATINGS Symbol Value v CEO 15 Vdc C ollector-Base V o ltage VCB 40 Vdc E m itter-B ase V o ltage V EB 4.5 Vdc >C 500 m A dc Rating C o lle cto r-E m itte r V o ltage C o lle cto r C u rre n t — C o ntinuous
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MMPQ2369*
751B-05,
SO-16
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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