TC4469
Abstract: IR 1836 3v TC4404 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405 TC4405COA
Text: TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so
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TC4404
TC4405
TC4404
TC4405
30nsec
100ted
DS21418A
TC4404/5-6
TC4469
IR 1836 3v
TC4404COA
TC4404CPA
TC4404EOA
TC4404EPA
TC4404MJA
TC4405COA
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LC3564Q
Abstract: No abstract text available
Text: Ordering number : ENN6509 Notice of Designation of the Maintenance and Obsolete and the Discontinued MOS ICs Affected products: Products listed below. Thank you for using Sanyo semiconductor products. We will be introducing the technology mentioned in the title as described below. Please take note of this introduction.
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ENN6509
LC35256B
LC35256C
LC35W256E
LC35V256E
LC3564Q
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NEC k 2134 transistor
Abstract: rbs 6501 RBS 2204 S 1854 2204 rbs NEC k 2134 DAR63
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD161862 POWER SUPPLY IC FOR LTPS DESCRIPTION The µPD161862 is a power supply IC for LTPS. This ICs can generate the levels which TFT-LCD driver need, from 2.7 V. FEATURES • High-withstanding-voltage output VDD1-VSS3 = 40 V MAX.
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PD161862
PD161862
PD161862P
NEC k 2134 transistor
rbs 6501
RBS 2204
S 1854
2204 rbs
NEC k 2134
DAR63
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MOS 6509
Abstract: No abstract text available
Text: SPICE Device Model Si7380ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7380ADP
to-10-V
18-Jul-08
MOS 6509
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TC4469
Abstract: TC4404 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405 TC4405COA TC4405CPA
Text: 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4404 TC4405 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so
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TC4404
TC4405
TC4404
TC4405
TC4469
TC4404COA
TC4404CPA
TC4404EOA
TC4404EPA
TC4404MJA
TC4405COA
TC4405CPA
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TC4426 CAPACITOR INPUT
Abstract: am 4428 TC4426 0.1 uf Ceramic disk Capacitor scr gate driver ic TelCom Semiconductor system design practice VSB52 SCR circuit CERAMIC DISK CAPACITOR Varo Semiconductor
Text: APPLICATION NOTE 25 TC4426/27/28 SYSTEM DESIGN PRACTICE By David Gillooly The TC4426/4427/4428 are CMOS buffer/drivers built using TelCom Semiconductor' new Tough CMOS process. They are improved versions of the earlier TC426/427/428 family of buffer/drivers with which they are pin compatible
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TC4426/27/28
TC4426/4427/4428
TC426/427/428
TC4426 CAPACITOR INPUT
am 4428
TC4426
0.1 uf Ceramic disk Capacitor
scr gate driver ic
TelCom Semiconductor system design practice
VSB52
SCR circuit
CERAMIC DISK CAPACITOR
Varo Semiconductor
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si4154
Abstract: SI415
Text: SPICE Device Model Si4154DY Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4154DY
18-Jul-08
si4154
SI415
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604ID
Abstract: No abstract text available
Text: SPICE Device Model Si7110ADN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7110ADN
18-Jul-08
604ID
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4154DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4154DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiA459EDJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ICL7660
Abstract: TC7660 TC7660EV TC7662B TC7662BCOA TC7662BCPA TC7662BEOA TC7662BEPA
Text: EVALUATION KIT AVAILABLE TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to
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TC7662B
TC7662B
TC7660
10kHz.
35kHz
10kHz
DS21469A
TC7662B-8
ICL7660
TC7660EV
TC7662BCOA
TC7662BCPA
TC7662BEOA
TC7662BEPA
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ICL7660
Abstract: TC7660 TC7660EV TC7662B TC7662BCOA TC7662BCPA TC7662BEOA TC7662BEPA
Text: EVALUATION KIT AVAILABLE TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to
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TC7662B
TC7662B
TC7660
10kHz.
35kHz
10kHz
DS21469A
TC7662B-8
ICL7660
TC7660EV
TC7662BCOA
TC7662BCPA
TC7662BEOA
TC7662BEPA
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to
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TC7662B
TC7662B
TC7660
10kHz.
35kHz
10kHz
DS21469A
TC7662B-8
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CDP18S601
Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from
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132nd
CDP18S601
CDP1802CD
MPM-206
RCA cosmac 1802
CD4061
CDP18S012
CDP1802CE
RCA-CDP1802
im6508
CDP18S007
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2n6788
Abstract: 2N6787 S/2N6787
Text: 2N6787 2N6788 POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros»h> and a high transconductance.
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2N6787
2N6788
2N6787
2n6788
S/2N6787
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2N6758
Abstract: 6757
Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.
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2N6758
1L-S-19500/542A
2N6758
6757
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2N6770
Abstract: MOS 6509 2N6769 2N677
Text: POWER MOSFET TRANSISTORS , JTX ,TXV¡"g» 500 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/543A J’JTX' JTXV 2N677°
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2N677°
IL-S-19500/543A
2N6770
2N6770
MOS 6509
2N6769
2N677
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MC145146-1
Abstract: MC14035 MC14032 mc14161
Text: Master Index 1 Product Selection Guide 2 i The “Better” Program 3 B and UB Series Family Data K CMOS Handling and Design Guidelines Data Sheets CMOS Reliability Equivalent Gate Count Packaging Information Including Surface Mounts E 8 i 9 DATA CLASSIFICATION
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Untitled
Abstract: No abstract text available
Text: "u N I T R ^ D E C O R F T 5 D eT I = 5 3 4 7 ^ 3 0 D 1 0 a b 3 1 9 3 4 7 9 6 3 UN I T RO DE C O R P 92D 10863 D J'-3‘}-&y POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdown
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UFNF322
UFNF323
ideally861-6540
T347TL
UFNF320
UFNF321
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LKI300
Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31
Text: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown
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c1347c
D1DS41
LKI300
ao 6786
2n6785
Unitrode 678-6
dioda s31
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MOS 6509
Abstract: ufn610
Text: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel UFN610 UFN611 UFN612 UFN613 FEATURES DESCRIPTION • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rds» and a high transconductance.
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UFN610
UFN611
UFN612
UFN613
UFN610
UFN611
UFN612
MOS 6509
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UFN232
Abstract: ufn230
Text: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN230
UFN231
UFN232
UFN233
UFN231
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UFN320
Abstract: C1347 MOS 6509
Text: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN320
UFN321
UFN322
UFN323
high-sp100
0D10t
UFN320
UFN321
C1347
MOS 6509
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ufnd110
Abstract: T3535
Text: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled
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Gia717
UFND110
UFND113
T3535
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