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    MOS 6509 Search Results

    MOS 6509 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 6509 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC4469

    Abstract: IR 1836 3v TC4404 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405 TC4405COA
    Text: TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so


    Original     		PDF TC4404 TC4405 TC4404 TC4405 30nsec 100ted DS21418A TC4404/5-6 TC4469 IR 1836 3v TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405COA

    LC3564Q

    Abstract: No abstract text available
    Text: Ordering number : ENN6509 Notice of Designation of the Maintenance and Obsolete and the Discontinued MOS ICs Affected products: Products listed below. Thank you for using Sanyo semiconductor products. We will be introducing the technology mentioned in the title as described below. Please take note of this introduction.


    Original     		PDF ENN6509 LC35256B LC35256C LC35W256E LC35V256E LC3564Q

    NEC k 2134 transistor

    Abstract: rbs 6501 RBS 2204 S 1854 2204 rbs NEC k 2134 DAR63
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD161862 POWER SUPPLY IC FOR LTPS DESCRIPTION The µPD161862 is a power supply IC for LTPS. This ICs can generate the levels which TFT-LCD driver need, from 2.7 V. FEATURES • High-withstanding-voltage output VDD1-VSS3 = 40 V MAX.


    Original     		PDF PD161862 PD161862 PD161862P NEC k 2134 transistor rbs 6501 RBS 2204 S 1854 2204 rbs NEC k 2134 DAR63

    MOS 6509

    Abstract: No abstract text available
    Text: SPICE Device Model Si7380ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7380ADP to-10-V 18-Jul-08 MOS 6509

    TC4469

    Abstract: TC4404 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405 TC4405COA TC4405CPA
    Text: 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4404 TC4404 TC4405 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so


    Original     		PDF TC4404 TC4405 TC4404 TC4405 TC4469 TC4404COA TC4404CPA TC4404EOA TC4404EPA TC4404MJA TC4405COA TC4405CPA

    TC4426 CAPACITOR INPUT

    Abstract: am 4428 TC4426 0.1 uf Ceramic disk Capacitor scr gate driver ic TelCom Semiconductor system design practice VSB52 SCR circuit CERAMIC DISK CAPACITOR Varo Semiconductor
    Text: APPLICATION NOTE 25 TC4426/27/28 SYSTEM DESIGN PRACTICE By David Gillooly The TC4426/4427/4428 are CMOS buffer/drivers built using TelCom Semiconductor' new Tough CMOS process. They are improved versions of the earlier TC426/427/428 family of buffer/drivers with which they are pin compatible


    Original     		PDF TC4426/27/28 TC4426/4427/4428 TC426/427/428 TC4426 CAPACITOR INPUT am 4428 TC4426 0.1 uf Ceramic disk Capacitor scr gate driver ic TelCom Semiconductor system design practice VSB52 SCR circuit CERAMIC DISK CAPACITOR Varo Semiconductor

    si4154

    Abstract: SI415
    Text: SPICE Device Model Si4154DY Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4154DY 18-Jul-08 si4154 SI415

    604ID

    Abstract: No abstract text available
    Text: SPICE Device Model Si7110ADN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7110ADN 18-Jul-08 604ID

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4154DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4154DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiA459EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    ICL7660

    Abstract: TC7660 TC7660EV TC7662B TC7662BCOA TC7662BCPA TC7662BEOA TC7662BEPA
    Text: EVALUATION KIT AVAILABLE TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to


    Original     		PDF TC7662B TC7662B TC7660 10kHz. 35kHz 10kHz DS21469A TC7662B-8 ICL7660 TC7660EV TC7662BCOA TC7662BCPA TC7662BEOA TC7662BEPA

    ICL7660

    Abstract: TC7660 TC7660EV TC7662B TC7662BCOA TC7662BCPA TC7662BEOA TC7662BEPA
    Text: EVALUATION KIT AVAILABLE TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to


    Original     		PDF TC7662B TC7662B TC7660 10kHz. 35kHz 10kHz DS21469A TC7662B-8 ICL7660 TC7660EV TC7662BCOA TC7662BCPA TC7662BEOA TC7662BEPA

    Untitled

    Abstract: No abstract text available
    Text: EVALUATION KIT AVAILABLE TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to


    Original     		PDF TC7662B TC7662B TC7660 10kHz. 35kHz 10kHz DS21469A TC7662B-8

    CDP18S601

    Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
    Text: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from


    OCR Scan     		PDF 132nd CDP18S601 CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007

    2n6788

    Abstract: 2N6787 S/2N6787
    Text: 2N6787 2N6788 POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros»h> and a high transconductance.


    OCR Scan     		PDF 2N6787 2N6788 2N6787 2n6788 S/2N6787

    2N6758

    Abstract: 6757
    Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF 2N6758 1L-S-19500/542A 2N6758 6757

    2N6770

    Abstract: MOS 6509 2N6769 2N677
    Text: POWER MOSFET TRANSISTORS , JTX ,TXV¡"g» 500 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/543A J’JTX' JTXV 2N677°


    OCR Scan     		PDF 2N677° IL-S-19500/543A 2N6770 2N6770 MOS 6509 2N6769 2N677

    MC145146-1

    Abstract: MC14035 MC14032 mc14161
    Text: Master Index 1 Product Selection Guide 2 i The “Better” Program 3 B and UB Series Family Data K CMOS Handling and Design Guidelines Data Sheets CMOS Reliability Equivalent Gate Count Packaging Information Including Surface Mounts E 8 i 9 DATA CLASSIFICATION


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: "u N I T R ^ D E C O R F T 5 D eT I = 5 3 4 7 ^ 3 0 D 1 0 a b 3 1 9 3 4 7 9 6 3 UN I T RO DE C O R P 92D 10863 D J'-3‘}-&y POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdown


    OCR Scan     		PDF UFNF322 UFNF323 ideally861-6540 T347TL UFNF320 UFNF321

    LKI300

    Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31
    Text: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown


    OCR Scan     		PDF c1347c D1DS41 LKI300 ao 6786 2n6785 Unitrode 678-6 dioda s31

    MOS 6509

    Abstract: ufn610
    Text: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel UFN610 UFN611 UFN612 UFN613 FEATURES DESCRIPTION • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rds» and a high transconductance.


    OCR Scan     		PDF UFN610 UFN611 UFN612 UFN613 UFN610 UFN611 UFN612 MOS 6509

    UFN232

    Abstract: ufn230
    Text: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF UFN230 UFN231 UFN232 UFN233 UFN231

    UFN320

    Abstract: C1347 MOS 6509
    Text: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF UFN320 UFN321 UFN322 UFN323 high-sp100 0D10t UFN320 UFN321 C1347 MOS 6509

    ufnd110

    Abstract: T3535
    Text: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled


    OCR Scan     		PDF Gia717 UFND110 UFND113 T3535